Depletion layer formation in suspensions of elastic capsules in Newtonian and viscoelastic fluids

2012 ◽  
Vol 24 (6) ◽  
pp. 061902 ◽  
Author(s):  
Pratik Pranay ◽  
Rafael G. Henríquez-Rivera ◽  
Michael D. Graham
Keyword(s):  
Viscoelastic Fluids ◽  
Depletion Layer ◽  
Layer Formation ◽  
Elastic Capsules

Interfacial quality improvement of Cu(In,Ga)Se2thin film solar cells by Cu-depletion layer formation

2016 ◽  
Vol 9 (9) ◽  
pp. 092301 ◽  
Author(s):  
Takahito Nishimura ◽  
Soma Toki ◽  
Hiroki Sugiura ◽  
Kazuyoshi Nakada ◽  
Akira Yamada
Keyword(s):  
Quality Improvement ◽  
Solar Cells ◽  
Depletion Layer ◽  
Layer Formation

Hole-Trap Depletion-Layer Formation in CdS

1969 ◽  
Vol 180 (3) ◽  
pp. 767-772
Author(s):  
Robert B. Comizzoli ◽  
Peter J. Warter
Keyword(s):  
Depletion Layer ◽  
Hole Trap ◽  
Layer Formation

Oxygen uptake and depletion layer formation during oxidation of γ-TiAl based alloys

1997 ◽  
Vol 5 (4) ◽  
pp. 311-320 ◽  
Author(s):  
V. Shemet ◽  
H. Hoven ◽  
W.J. Quadakkers
Keyword(s):  
Oxygen Uptake ◽  
Depletion Layer ◽  
Layer Formation

Oxide reliability: influence of interface roughness, structure layout, and depletion layer formation

2001 ◽  
Vol 41 (7) ◽  
pp. 1097-1100
Author(s):  
B. Lanchava ◽  
P. Baumgartner ◽  
A. Martin ◽  
A. Beyer ◽  
E. Mueller
Keyword(s):  
Depletion Layer ◽  
Interface Roughness ◽  
Layer Formation ◽  
Oxide Reliability ◽  
Structure Layout

Alternating Current Electro-Osmotic Flow of the Maxwell Fluids Through a Circular Micro-Pipe

2012 ◽  
Vol 29 (2) ◽  
pp. 233-240 ◽  
Author(s):  
L.-X. Sun ◽  
Y.-J. Jian ◽  
L. Chang ◽  
H.-Y. Zhang ◽  
Q.-S. Liu
Keyword(s):  
Layer Thickness ◽  
Viscosity Ratio ◽  
Viscoelastic Fluids ◽  
Maxwell Fluid ◽  
Deborah Number ◽  
Depletion Layer ◽  
Velocity Amplitude ◽  
Velocity Magnitude ◽  
Linear Viscoelastic ◽  
Poisson Boltzmann Equation

AbstractAnalytical solutions are presented for time periodic EOF flow of linear viscoelastic fluids through a cylindrical micro-pipe. The linear viscoelastic fluids used here are described by the general Maxwell model. The solution involves analytically solving the linearized Poisson-Boltzmann equation, together with the Cauchy momentum equation and the general Maxwell constitutive equation considering the depletion effect produced by the interaction between macro-molecules of the Maxwell fluid and the channel surface. The overall flow is divided into depletion layer and bulk flow outside of depletion layer. The velocity expressions of these two layers were obtained, respectively. By numerical computations, the influences of the periodic EOF electric oscillating Reynolds number Re, Deborah number De, depletion layer thickness δ and the viscosity ratio γ of Maxwell to Newtonian fluids on velocity profile are presented. For a prescribed De, the increasing Re will cause large changes of the EOF velocity with decreasing velocity magnitude. For a given Re, large De gives large EOF velocity magnitude. Increasing γ will lead to larger velocity amplitude for a given lower Re. However, at higher Re, the velocity amplitude decreases with the viscosity ratio γ, especially within the depletion layer. In addition, large depletion layer thickness gives small EOF velocity magnitude for fixed Re and De. Finally, the influence of De on energy dissipation is studied. These results provide a detail insight of the flow characteristic of this flow configuration.

Depletion layer formation rate at T<30 °K in buried channel, metal‐oxide‐semiconductor transistors

1984 ◽  
Vol 56 (2) ◽  
pp. 517-521 ◽  
Author(s):  
S. K. Tewksbury ◽  
M. R. Biazzo ◽  
T. L. Lindstrom ◽  
D. M. Tennant
Keyword(s):  
Metal Oxide ◽  
Formation Rate ◽  
Metal Oxide Semiconductor ◽  
Depletion Layer ◽  
Oxide Semiconductor ◽  
Layer Formation ◽  
Buried Channel
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