Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy

2012 ◽  
Vol 100 (23) ◽  
pp. 233121 ◽  
Author(s):  
David Cooper ◽  
Cyrille Le Royer ◽  
Armand Béché ◽  
Jean-Luc Rouvière
Keyword(s):  
Semiconductor Devices ◽  
Dark Field ◽  
Silicon On Insulator ◽  
High Angle ◽  
Strain Mapping ◽  
Transmission Microscopy ◽  
Electron Transmission ◽  
Annular Dark Field ◽  
Electron Transmission Microscopy ◽  
Scanning Electron

scholarly journals Randomly oriented twin domains in electrodeposited silver dendrites

2015 ◽  
Vol 80 (1) ◽  
pp. 107-113 ◽  
Author(s):  
Evica Ivanovic ◽  
Nebojsa Nikolic ◽  
Velimir Radmilovic
Keyword(s):  
Electron Microscopy ◽  
Orientation Imaging Microscopy ◽  
Dark Field ◽  
High Angle ◽  
Orientation Imaging ◽  
Transmission Electron ◽  
Annular Dark Field ◽  
Silver Dendrites ◽  
Z Contrast ◽  
Scanning Electron

Silver dendrites were prepared by electrochemical deposition. The structures of Ag dendrites, the type of twins and their distribution were investigated by scanning electron microscopy (SEM), Z-contrast high angle annular dark field transmission electron microscopy (HAADF), and crystallografically sensitive orientation imaging microscopy (OIM). The results revealed that silver dendrites are characterized by the presence of randomly distributed 180? rotational twin domains. The broad surface of dendrites was of the {111} type. Growth directions of the main dendrite stem and all branches were of <112> type.

scholarly journals Simulation of Incoherent Scattering in High-Angle Annular Dark-Field Scanning Electron Microscopy

2013 ◽  
Vol 19 (S2) ◽  
pp. 852-853
Author(s):  
A. Dutta ◽  
C. Reid ◽  
H. Heinrich
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Dark Field ◽  
Incoherent Scattering ◽  
High Angle ◽  
Annular Dark Field ◽  
Scanning Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Ultrastructure of Melanin Formation in Curvularia sp., Alternaria sp., and Drechslera Sorokiniana

1977 ◽  
Vol 35 ◽  
pp. 398-399
Author(s):  
M. H. Wheeler ◽  
W. J. Tolmsoff ◽  
A. A. Bell
Keyword(s):  
Potassium Phosphate ◽  
Thielaviopsis Basicola ◽  
Wild Type ◽  
Potassium Phosphate Buffer ◽  
Transmission Microscopy ◽  
Electron Transmission ◽  
Melanin Formation ◽  
Before And After ◽  
Alternaria Sp ◽  
Electron Transmission Microscopy

(+)-Scytalone [3,4-dihydro-3,6,8-trihydroxy-l-(2Hj-naphthalenone] and 1,8-di- hydroxynaphthalene (DHN) have been proposed as intermediates of melanin synthesis in the fungi Verticillium dahliae (1, 2, 3, 4) and Thielaviopsis basicola (4, 5). Scytalone is enzymatically dehydrated by V. dahliae to 1,3,8-trihydroxynaphthalene which is then reduced to (-)-vermelone [(-)-3,4- dihydro-3,8-dihydroxy-1(2H)-naphthalenone]. Vermelone is subsequently dehydrated to DHN which is enzymatically polymerized to melanin.Melanin formation in Curvularia sp., Alternaria sp., and Drechslera soro- kiniana was examined by light and electron-transmission microscopy. Wild-type isolates of each fungus were compared with albino mutants before and after treatment with 1 mM scytalone or 0.1 mM DHN in 50 mM potassium phosphate buffer, pH 7.0. Both chemicals were converted to dark pigments in the walls of hyphae and conidia of the albino mutants. The darkened cells were similar in appearance to corresponding cells of the wild types under the light microscope.

Influence of spatial and temporal coherences on atomic resolution high angle annular dark field imaging

2016 ◽  
Vol 169 ◽  
pp. 1-10 ◽  
Author(s):  
Andreas Beyer ◽  
Jürgen Belz ◽  
Nikolai Knaub ◽  
Kakhaber Jandieri ◽  
Kerstin Volz
Keyword(s):  
Dark Field ◽  
Atomic Resolution ◽  
High Angle ◽  
Dark Field Imaging ◽  
Annular Dark Field ◽  
Field Imaging

The Scattering Distribution from Semiconductors as a Function of Angle and Energy Loss in the Electron Microscope

1996 ◽  
Vol 466 ◽  
Author(s):  
C. B. Boothroyd ◽  
R. E. Dunin-Borkowski ◽  
T. Walther
Keyword(s):  
Electron Microscope ◽  
Energy Loss ◽  
Dark Field ◽  
High Angle ◽  
Scattering Angle ◽  
Annular Dark Field ◽  
Insight Into

ABSTRACTWe examine the scattering distribution from thin C, Ge and thick Si specimens as a function of scattering angle and energy loss, in order to gain insight into the relative contributions to both low and high angle annular dark field images from elastically and inelastically scattered elections.

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