Threshold voltage shift and drain current degradation by negative bias temperature instability in Si (110) p-channel metal-oxide-semiconductor field-effect transistor

2012 ◽  
Vol 100 (21) ◽  
pp. 212109 ◽  
Author(s):  
K. Ota ◽  
M. Saitoh ◽  
Y. Nakabayashi ◽  
T. Ishihara ◽  
K. Uchida ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Negative Bias ◽  
Negative Bias Temperature Instability ◽  
Threshold Voltage Shift ◽  
Bias Temperature Instability ◽  
Effect Transistor

Quantum Modelling of Nanoscale Silicon Gate-All-Around Field Effect Transistor

2020 ◽  
Vol 64 ◽  
pp. 115-122
Author(s):  
P. Vimala ◽  
N.R. Nithin Kumar
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
Quantum Mechanical Effects ◽  
Novel Devices

The paper introduces an analytical model for gate all around (GAA) or Surrounding Gate Metal Oxide Semiconductor Field Effect Transistor (SG-MOSFET) inclusive of quantum mechanical effects. The classical oxide capacitance is replaced by the capacitance incorporating quantum effects by including the centroid parameter. The quantum variant of inversion charge distribution function, inversion layer capacitance, drain current, and transconductance expressions are modeled by employing this model. The established analytical model results agree with the simulated results, verifying these models' validity and providing theoretical supports for designing and applying these novel devices.

Negative Bias Temperature Instability of Bulk Fin Field Effect Transistor

2006 ◽  
Vol 45 (3A) ◽  
pp. 1467-1470 ◽  
Author(s):  
Sang-Yun Kim ◽  
Kyoung-Rok Han ◽  
Byung-Kil Choi ◽  
Seong-Ho Kong ◽  
Jae-Sung Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Negative Bias ◽  
Negative Bias Temperature Instability ◽  
Temperature Instability ◽  
Bias Temperature Instability ◽  
Effect Transistor

scholarly journals Subthreshold Characteristics of a Metal-Oxide–Semiconductor Field-Effect Transistor with External PVDF Gate Capacitance

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 673
Author(s):  
Jing-Jenn Lin ◽  
Ji-Hua Tao ◽  
You-Lin Wu
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Ferroelectric Capacitor ◽  
In Series ◽  
Effect Transistor

An organic ferroelectric capacitor, using polyvinylidene difluoride (PVDF) as the dielectric, was fabricated. By connecting the PVDF capacitor in series to the gate of a commercially purchased metal-oxide–semiconductor field-effect transistor (MOSFET), drain current (ID)–drain voltage (VD) characteristics and drain current (ID)–gate voltage (VG) characteristics were measured. In addition, the subthreshold slopes of the MOSFET were determined from the ID–VG curves. It was found that the subthreshold slope could be effectively reduced by 23% of its original value when the PVDF capacitor was added to the gate of the MOSFET.

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