High mobility In0.53Ga0.47As quantum-well metal oxide semiconductor field effect transistor structures

Li Yang; Cheng-Wei Cheng; Mayank T. Bulsara; Eugene A. Fitzgerald

doi:10.1063/1.4721328

High mobility In0.53Ga0.47As quantum-well metal oxide semiconductor field effect transistor structures

Journal of Applied Physics ◽

10.1063/1.4721328 ◽

2012 ◽

Vol 111 (10) ◽

pp. 104511 ◽

Cited By ~ 11

Author(s):

Li Yang ◽

Cheng-Wei Cheng ◽

Mayank T. Bulsara ◽

Eugene A. Fitzgerald

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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A Self-Aligned InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated through a Lift-Off-Free Front-End Process

Applied Physics Express ◽

10.1143/apex.5.064002 ◽

2012 ◽

Vol 5 (6) ◽

pp. 064002 ◽

Cited By ~ 28

Author(s):

Jianqiang Lin ◽

Tae-Woo Kim ◽

Dimitri A. Antoniadis ◽

Jesús A. del Alamo

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Front End ◽

Effect Transistor ◽

Lift Off ◽

Ingaas Quantum Well

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Anomalous behavior of a quantized Hall plateau in a high-mobility Si metal-oxide–semiconductor field-effect transistor

Physical Review B ◽

10.1103/physrevb.45.14204 ◽

1992 ◽

Vol 45 (24) ◽

pp. 14204-14214 ◽

Cited By ~ 13

Author(s):

Kazuo Yoshihiro ◽

Craig T. Van Degrift ◽

Marvin E. Cage ◽

Dingyi Yu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

High Mobility ◽

Anomalous Behavior ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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High-Mobility p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor on Strained Si

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.2412 ◽

1994 ◽

Vol 33 (Part 1, No. 4B) ◽

pp. 2412-2414 ◽

Cited By ~ 13

Author(s):

Deepak K. Nayak ◽

Jason C. S. Woo ◽

Jin S. Park ◽

Kang L. Wang ◽

Ken P. MacWilliams

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Effect Transistor

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Unified compact model for the ballistic quantum wire and quantum well metal-oxide-semiconductor field-effect-transistor

Journal of Applied Physics ◽

10.1063/1.1582557 ◽

2003 ◽

Vol 94 (2) ◽

pp. 1061-1068 ◽

Cited By ~ 57

Author(s):

D. Jiménez ◽

J. J. Sáenz ◽

B. Iñı́quez ◽

J. Suñé ◽

L. F. Marsal ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Quantum Wire ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Compact Model ◽

Oxide Semiconductor ◽

Effect Transistor

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Self-Aligned Ni-Germanide Ohmic Contact to n-Type GaAs Substrate for High Mobility III-V Channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET)

ECS Meeting Abstracts ◽

10.1149/ma2014-02/31/1660 ◽

2014 ◽

Keyword(s):

Metal Oxide ◽

Ohmic Contact ◽

Gaas Substrate ◽

Field Effect ◽

Field Effect Transistor ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Low Threshold Voltage and High Mobility N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Hf–Si/HfO2Gate Stack Fabricated by Gate-Last Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.016502 ◽

2010 ◽

Vol 49 (1) ◽

pp. 016502 ◽

Cited By ~ 4

Author(s):

Takashi Ando ◽

Tomoyuki Hirano ◽

Kaori Tai ◽

Shinpei Yamaguchi ◽

Shinichi Yoshida ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Low Threshold ◽

Effect Transistor

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Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106046 ◽

2021 ◽

Vol 134 ◽

pp. 106046

Author(s):

Shujun Ye ◽

Kikuo Yamabe ◽

Tetsuo Endoh

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

Journal of Applied Physics ◽

10.1063/5.0027214 ◽

2020 ◽

Vol 128 (24) ◽

pp. 244501

Author(s):

M. A. Anders ◽

P. M. Lenahan ◽

N. J. Harmon ◽

M. E. Flatté

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Zero Field ◽

Charge Pumping ◽

Effect Transistor

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Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00181-4 ◽

2020 ◽

Vol 21 (3) ◽

pp. 339-347 ◽

Cited By ~ 3

Author(s):

N. P. Maity ◽

Reshmi Maity ◽

Subir Dutta ◽

Subhasish Deb ◽

K. Girija Sravani ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Effect Transistor

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High responsivity in integrated optically controlled metal-oxide semiconductor field-effect transistor using directly bonded SiO2-InP

IEEE Photonics Technology Letters ◽

10.1109/68.605530 ◽

1997 ◽

Vol 9 (8) ◽

pp. 1143-1145 ◽

Cited By ~ 10

Author(s):

T. Yamagata ◽

K. Shimomura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Responsivity ◽

Effect Transistor

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