Unified compact model for the ballistic quantum wire and quantum well metal-oxide-semiconductor field-effect-transistor

2003 ◽  
Vol 94 (2) ◽  
pp. 1061-1068 ◽  
Author(s):  
D. Jiménez ◽  
J. J. Sáenz ◽  
B. Iñı́quez ◽  
J. Suñé ◽  
L. F. Marsal ◽  
...  
Keyword(s):  
Quantum Well ◽  
Metal Oxide ◽  
Quantum Wire ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Compact Model ◽  
Oxide Semiconductor ◽  
Effect Transistor

Analytical Compact Model of Ballistic Cylindrical Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor

2010 ◽  
Vol 49 (4) ◽  
pp. 04DN05 ◽  
Author(s):  
Tatsuhiro Numata ◽  
Shigeyasu Uno ◽  
Kazuo Nakazato ◽  
Yoshinari Kamakura ◽  
Nobuya Mori
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Compact Model ◽  
Oxide Semiconductor ◽  
Effect Transistor

Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

1987 ◽  
Vol 65 (8) ◽  
pp. 995-998
Author(s):  
N. G. Tarr
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Potential Drop ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Analytic Approximation ◽  
Effect Transistor ◽  
Long Channel

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

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