Temperature dependence of the energy gap and spin-orbit splitting in a narrow-gap InGaAsSb solid solution

2012 ◽  
Vol 100 (21) ◽  
pp. 211906 ◽  
Author(s):  
M. Motyka ◽  
F. Janiak ◽  
G. Sęk ◽  
J. Misiewicz ◽  
K. D. Moiseev
2011 ◽  
Vol 99 (1) ◽  
pp. 011904 ◽  
Author(s):  
R. Kudrawiec ◽  
M. Latkowska ◽  
J. Misiewicz ◽  
Q. Zhuang ◽  
A. M. R. Godenir ◽  
...  

1982 ◽  
Vol 60 (1) ◽  
pp. 10-15 ◽  
Author(s):  
S. Adan Lopez-Rivera ◽  
R. Gerald Goodchild ◽  
Owain H. Hughes ◽  
John C. Woolley ◽  
Brian R. Pamplin

Measurements of reflectance as a function of temperature from 4 to 300 K have been made on a single crystal sample of CuGaSnSe4 using light polarised (a) perpendicular and (b) parallel to the c axis of the crystal. Values of the energy gaps EA, EB, and EC between the three valence bands and the conduction band have thus been determined as a function of temperature. The variation of these energy gaps with temperature has been fitted to the equation proposed by Manoogian and Leclerc, i.e., E0 − E = UTs + Vθ(coth (θ/2T) − 1). Values of spin–orbit splitting Δso and crystal field splitting Δcf have been determined and the temperature variation of these explained in terms of contributions from d orbitals to the valence band. Values of the various spin–orbit splittings and deformation potentials are discussed.


2009 ◽  
Vol 94 (15) ◽  
pp. 151902 ◽  
Author(s):  
R. Kudrawiec ◽  
J. Misiewicz ◽  
Q. Zhuang ◽  
A. M. R. Godenir ◽  
A. Krier

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Xue-Lian Qi

Abstract The bandgap energy of the dilute bismuth GaBi x Sb1−x alloy vs. temperature is investigated in this study. Its reduced temperature-sensitiveness is because of the localized character of the valence band states (VBS). In order to describe the reduced temperature-sensitiveness of the bandgap energy, a new term including localized energy is added to Varshni's equation. It is found that the localized energy exhibits an increasing trend as the bismuth fraction increases, which indicates that the localized character of the VBS becomes strong with the increasing bismuth fraction. It is also found that the influence of the bismuth fraction on the temperature dependence of the bandgap energy of GaBi x Sb1−x is smaller than that of GaBi x As1−x . In addition, the element indium is undoubtedly a good candidate to lessen the bismuth fraction to realize that the spin-orbit-splitting (SOP) energy surpasses the bandgap energy in GaBi x Sb1−x .


1999 ◽  
Vol 571 ◽  
Author(s):  
H. W. H. Lee ◽  
C. A. Smith ◽  
V. J. Leppert ◽  
S. H. Risbud

ABSTRACTWe observed the quantum confined bandedge emission from ZnSe quantum dots and the size dependence of the energy states, spin-orbit interaction, and Stokes shift. The bandedge emission occurs in the UV-blue. The energy gap = Eg + C/dn where d is the diameter and n is 1. 19 ± 0.13 and 1.21 ± 0.13 for the first and second electron-hole transitions, respectively. The separation between these transitions approaches the bulk spin-orbit splitting, while the Stokes shift decreases with particle size. Effective mass theories can not explain these results. Trap emission is observed in some samples in the green and red, resulting from Se-related traps.


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