Determination of junction temperature in AlGaInP∕GaAs light emitting diodes by self-excited photoluminescence signal

2006 ◽  
Vol 89 (10) ◽  
pp. 101114 ◽  
Author(s):  
N. C. Chen ◽  
Y. N. Wang ◽  
C. Y. Tseng ◽  
Y. K. Yang
Keyword(s):  
Light Emitting Diodes ◽  
Junction Temperature ◽  
Light Emitting

Study of temperature sensitive optical parameters and junction temperature determination of light-emitting diodes

2012 ◽  
Vol 100 (20) ◽  
pp. 202108 ◽  
Author(s):  
Yue Lin ◽  
Yu-Lin Gao ◽  
Yi-Jun Lu ◽  
Li-Hong Zhu ◽  
Yong Zhang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Junction Temperature ◽  
Temperature Sensitive ◽  
Optical Parameters ◽  
Light Emitting ◽  
Temperature Determination

Determination of Junction Temperature in InGaN and AlGaInP Light-Emitting Diodes

2010 ◽  
Vol 46 (10) ◽  
pp. 1450-1455 ◽  
Author(s):  
Ya-Ju Lee ◽  
Chia-Jung Lee ◽  
Chih-Hao Chen
Keyword(s):  
Light Emitting Diodes ◽  
Junction Temperature ◽  
Light Emitting

A Technique for the Direct Measurement of the Junction Temperature in Power Light Emitting Diodes

2020 ◽  
pp. 1-1
Author(s):  
Demetrio Iero ◽  
Massimo Merenda ◽  
Sonia Polimeni ◽  
Riccardo Carotenuto ◽  
Francesco G. Della Corte
Keyword(s):  
Direct Measurement ◽  
Light Emitting Diodes ◽  
Junction Temperature ◽  
Light Emitting

Light source with light emitting diodes. Determination of limited frequencies and of the crest factor of illuminance meters and luminance meters

1989 ◽  
Vol 20 (5) ◽  
pp. 205-217
Author(s):  
J Deforges ◽  
P Garcia ◽  
J Bastie ◽  
F Marandet ◽  
J Bernard ◽  
...  
Keyword(s):  
Light Source ◽  
Light Emitting Diodes ◽  
Crest Factor ◽  
Light Emitting

scholarly journals Numerical Simulation on Electrical-Thermal Properties of Gallium-Nitride-Based Light-Emitting Diodes Embedded in Board

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Xing-ming Long ◽  
Rui-jin Liao ◽  
Jing Zhou
Keyword(s):  
Finite Element ◽  
Gallium Nitride ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Thermal Characteristics ◽  
Junction Temperature ◽  
Current Crowding ◽  
Total Thermal Resistance ◽  
Light Emitting ◽  
Packaging Structure

The electrical-thermal characteristics of gallium-nitride- (GaN-) based light-emitting diodes (LED), packaged by chips embedded in board (EIB) technology, were investigated using a multiphysics and multiscale finite element code, COMSOL. Three-dimensional (3D) finite element model for packaging structure has been developed and optimized with forward-voltage-based junction temperatures of a 9-chip EIB sample. The sensitivity analysis of the simulation model has been conducted to estimate the current and temperature distribution changes in EIB LED as the blue LED chip (substrate, indium tin oxide (ITO)), packaging structure (bonding wire and chip numbers), and system condition (injection current) changed. This method proved the reliability of simulated results in advance and useful material parameters. Furthermore, the method suggests that the parameter match on Shockley's equation parameters, Rs, nideal, and Is, is a potential method to reduce the current crowding effect for the EIB LED. Junction temperature decreases by approximately 3 K to 10 K can be achieved by substrate thinning, ITO, and wire bonding. The nonlinear-decreasing characteristics of total thermal resistance that decrease with an increase in chip numbers are likely to improve the thermal performance of EIB LED modules.

Study the Effect of Junction Temperature on the Peak Wavelength in GaN-Based High-Power Green Light Emitting Diodes

2011 ◽  
Vol 399-401 ◽  
pp. 1034-1038
Author(s):  
Rong Rong Zhuang ◽  
Ping Cai ◽  
Jiang Li Huang
Keyword(s):  
High Power ◽  
Temperature Rise ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Red Shift ◽  
Junction Temperature ◽  
Spectral Peak ◽  
Peak Wavelength ◽  
Drive Current ◽  
Light Emitting

The junction temperature of GaN-based high-power green light emitting diodes is measured using the temperature coefficients of the diode forward voltage, from changes in temperature and changes in drive current to measure the LED junction temperature and the corresponding spectral, Respectively. Experiments show that, junction temperature due to environmental temperature increased, and the red shift of the spectral peak wavelength. When low temperature or less then the rated current range, the drive current increased in junction temperature rise due to the spectral peak wavelength blue shift . When the current is increased in the range of close to or greater than the rated current, leading to the junction temperature rise will cause spectral red shift . The peak wavelengths’ shift degree of 0.0579nm / k, 0.0751 nm / k and-0.1974nm / k, -0.0915 nm / k are calculated in both cases. The phenomenon is due to the LED junction temperature increases lead to band gap shrinkage, and the result of the role of spontaneous polarization and piezoelectric polarization in Ⅲ-nitride semiconductor materials.

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