Spatial control of magnetic anisotropy for current induced domain wall injection in perpendicularly magnetized CoFeB|MgO nanostructures

2012 ◽  
Vol 100 (19) ◽  
pp. 192411 ◽  
Author(s):  
Masamitsu Hayashi ◽  
Michihiko Yamanouchi ◽  
Shunsuke Fukami ◽  
Jaivardhan Sinha ◽  
Seiji Mitani ◽  
...  
Keyword(s):  
Domain Wall ◽  
Magnetic Anisotropy ◽  
Spatial Control ◽  
Wall Injection

Magnetization dynamics of irradiation-fabricated perpendicularly magnetized dots inside a softer magnetic matrix

2003 ◽  
Vol 777 ◽  
Author(s):  
T. Devolder ◽  
M. Belmeguenai ◽  
C. Chappert ◽  
H. Bernas ◽  
Y. Suzuki
Keyword(s):  
Domain Wall ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
Ion Irradiation ◽  
Magnetic Nanostructures ◽  
Magnetic Storage ◽  
Exchange Field ◽  
Static Magnetization ◽  
Specific Domain ◽  
Helium Ion

AbstractGlobal Helium ion irradiation can tune the magnetic properties of thin films, notably their magneto-crystalline anisotropy. Helium ion irradiation through nanofabricated masks can been used to produce sub-micron planar magnetic nanostructures of various types. Among these, perpendicularly magnetized dots in a matrix of weaker magnetic anisotropy are of special interest because their quasi-static magnetization reversal is nucleation-free and proceeds by a very specific domain wall injection from the magnetically “soft” matrix, which acts as a domain wall reservoir for the “hard” dot. This guarantees a remarkably weak coercivity dispersion. This new type of irradiation-fabricated magnetic device can also be designed to achieve high magnetic switching speeds, typically below 100 ps at a moderate applied field cost. The speed is obtained through the use of a very high effective magnetic field, and high resulting precession frequencies. During magnetization reversal, the effective field incorporates a significant exchange field, storing energy in the form of a domain wall surrounding a high magnetic anisotropy nanostructure's region of interest. The exchange field accelerates the reversal and lowers the cost in reversal field. Promising applications to magnetic storage are anticipated.

scholarly journals Tunable steady-state domain wall oscillator with perpendicular magnetic anisotropy

2009 ◽  
Vol 95 (16) ◽  
pp. 162504 ◽  
Author(s):  
A. Bisig ◽  
L. Heyne ◽  
O. Boulle ◽  
M. Kläui
Keyword(s):  
Steady State ◽  
Domain Wall ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy

scholarly journals Reduced domain wall pinning in ultrathin Pt/Co100−xBx/Pt with perpendicular magnetic anisotropy

2010 ◽  
Vol 96 (2) ◽  
pp. 022501 ◽  
Author(s):  
R. Lavrijsen ◽  
G. Malinowski ◽  
J. H. Franken ◽  
J. T. Kohlhepp ◽  
H. J. M. Swagten ◽  
...  
Keyword(s):  
Domain Wall ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Domain Wall Pinning

scholarly journals Antiferromagnetic domain wall control via surface spin flop in fully tunable synthetic antiferromagnets with perpendicular magnetic anisotropy

2019 ◽  
Vol 100 (14) ◽  
Author(s):  
Benny Böhm ◽  
Lorenzo Fallarino ◽  
Darius Pohl ◽  
Bernd Rellinghaus ◽  
Kornelius Nielsch ◽  
...  
Keyword(s):  
Domain Wall ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Surface Spin

Effect of Current Annealing on Domain Wall Dynamics in Bistable FeCoMoB Microwires

2015 ◽  
Vol 233-234 ◽  
pp. 281-284 ◽  
Author(s):  
Peter Klein ◽  
Rastislav Varga ◽  
Vladimir Komanicky ◽  
Giovanni Badini-Confalonieri ◽  
Manuel Vázquez
Keyword(s):  
Magnetic Field ◽  
Domain Wall ◽  
Magnetic Anisotropy ◽  
Temperature Stability ◽  
Electrical Current ◽  
Domain Wall Dynamics ◽  
Higher Temperature ◽  
Current Annealing

We have studied effect of current annealing on domain wall dynamics of FeCoMoB microwires. It was showed that 10 minutes of current annealing corresponds to 1 hour of classical annealing in furnace. Moreover, electrical current flowing through microwire produces Oersted magnetic field and therefore circular magnetic anisotropy is induced during annealing. As a result, induced circular magnetic anisotropy prefers vortex domain wall with velocities up to 3 km/s that can be observed in the current annealed nanocrystalline FeCoMoB microwires with much higher temperature stability.

scholarly journals Facilitating domain wall injection in magnetic nanowires by electrical means

2020 ◽  
Vol 101 (22) ◽  
Author(s):  
Davi R. Rodrigues ◽  
Nils Sommer ◽  
Karin Everschor-Sitte
Keyword(s):  
Domain Wall ◽  
Magnetic Nanowires ◽  
Wall Injection
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