Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

R. Kudrawiec; M. Gladysiewicz; L. Janicki; J. Misiewicz; G. Cywinski; C. Chèze; P. Wolny; P. Prystawko; C. Skierbiszewski

doi:10.1063/1.4707386

Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.4707386 ◽

2012 ◽

Vol 100 (18) ◽

pp. 181603 ◽

Cited By ~ 24

Author(s):

R. Kudrawiec ◽

M. Gladysiewicz ◽

L. Janicki ◽

J. Misiewicz ◽

G. Cywinski ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Fermi Level ◽

Vapor Phase ◽

Molecular Beam ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Fermi Level Position

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Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2003.10.082 ◽

2004 ◽

Vol 262 (1-4) ◽

pp. 145-150 ◽

Cited By ~ 33

Author(s):

V. Potin ◽

E. Hahn ◽

A. Rosenauer ◽

D. Gerthsen ◽

B. Kuhn ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Vapor Phase ◽

Molecular Beam ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Structures

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Studies of free‐to‐bound acceptor photoluminescence in an applied magnetic field for undoped GaAs grown by metalorganic vapor‐phase epitaxy and molecular‐beam epitaxy

Journal of Applied Physics ◽

10.1063/1.336937 ◽

1986 ◽

Vol 59 (8) ◽

pp. 2828-2832 ◽

Cited By ~ 18

Author(s):

S. Zemon ◽

P. Norris ◽

E. S. Koteles ◽

G. Lambert

Keyword(s):

Magnetic Field ◽

Molecular Beam Epitaxy ◽

Vapor Phase ◽

Applied Magnetic Field ◽

Molecular Beam ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Undoped Gaas

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Interface structures in quantum wells controlled by metalorganic vapor phase epitaxy and molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)00553-2 ◽

1995 ◽

Vol 146 (1-4) ◽

pp. 379-383 ◽

Cited By ~ 6

Author(s):

N. Inoue ◽

K. Ikuta ◽

M. Shinohara ◽

J. Osaka

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Vapor Phase ◽

Molecular Beam ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Interface Structures

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Surface Fermi-level position and gap state distribution of InGaP surface grown by metalorganic vapor-phase epitaxy

Applied Physics Letters ◽

10.1063/1.1509119 ◽

2002 ◽

Vol 81 (13) ◽

pp. 2382-2384 ◽

Cited By ~ 4

Author(s):

Tamotsu Hashizume

Keyword(s):

Fermi Level ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

State Distribution ◽

Fermi Level Position ◽

Surface Fermi Level ◽

Gap State

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Observation of a new in-situ optical monitoring signal with monolayer resolution in metalorganic molecular beam epitaxy and metalorganic vapor phase epitaxy of wide-gap II–VI compounds

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91030-8 ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 68-73 ◽

Cited By ~ 4

Author(s):

Akihiko Yoshikawa ◽

Masakazu Kobayashi ◽

Shigeru Tokita

Keyword(s):

Molecular Beam Epitaxy ◽

Vapor Phase ◽

Molecular Beam ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Optical Monitoring ◽

Metalorganic Molecular Beam Epitaxy ◽

Wide Gap

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Weakly Index Guided Buried-Stripe Type 980 nm Laser Diodes Grown by a Combination of Gas Source Molecular Beam Epitaxy and Metalorganic Vapor Phase Epitaxy with an AlGaAs/InGaP/GaAs Double Etch Stop Structure

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.5888 ◽

1999 ◽

Vol 38 (Part 1, No. 10) ◽

pp. 5888-5897 ◽

Cited By ~ 6

Author(s):

Hideyoshi Horie ◽

Satoru Nagao ◽

Kenji Shimoyama ◽

Toshinari Fujimori

Keyword(s):

Molecular Beam Epitaxy ◽

Vapor Phase ◽

Molecular Beam ◽

Laser Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Gas Source ◽

Etch Stop

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Modeling of molecular‐beam epitaxy and metalorganic vapor‐phase epitaxy on nonplanar surfaces

Journal of Applied Physics ◽

10.1063/1.354027 ◽

1993 ◽

Vol 73 (11) ◽

pp. 7358-7369 ◽

Cited By ~ 28

Author(s):

Mitsuru Ohtsuka ◽

Akira Suzuki

Keyword(s):

Molecular Beam Epitaxy ◽

Vapor Phase ◽

Molecular Beam ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy

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Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2016.08.047 ◽

2016 ◽

Vol 456 ◽

pp. 121-132 ◽

Cited By ~ 19

Author(s):

D.F. Storm ◽

M.T. Hardy ◽

D.S. Katzer ◽

N. Nepal ◽

B.P. Downey ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Vapor Phase ◽

Molecular Beam ◽

Vapor Phase Epitaxy ◽

Hydride Vapor Phase Epitaxy ◽

Critical Issues

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Electron irradiation induced defects and schottky diode characteristics for metalorganic vapor phase epitaxy and molecular beam epitaxial n-GaAs

Journal of Electronic Materials ◽

10.1007/bf02659720 ◽

1995 ◽

Vol 24 (1) ◽

pp. 15-20 ◽

Cited By ~ 6

Author(s):

G. H. Yousefi ◽

J. B. Webb ◽

R. Rousina ◽

S. M. Khanna

Keyword(s):

Vapor Phase ◽

Schottky Diode ◽

Electron Irradiation ◽

Molecular Beam ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Molecular Beam Epitaxial ◽

Induced Defects ◽

Irradiation Induced Defects

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High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.1484227 ◽

2002 ◽

Vol 92 (1) ◽

pp. 338-345 ◽

Cited By ~ 61

Author(s):

M. J. Manfra ◽

N. G. Weimann ◽

J. W. P. Hsu ◽

L. N. Pfeiffer ◽

K. W. West ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Vapor Phase ◽

Molecular Beam ◽

High Mobility ◽

Vapor Phase Epitaxy ◽

Hydride Vapor Phase Epitaxy

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