Reducing spin torque switching current density by boron insertion into a CoFeB free layer of a magnetic tunnel junction

2012 ◽  
Vol 100 (17) ◽  
pp. 172407 ◽  
Author(s):  
Xin Jiang ◽  
Rai Moriya ◽  
Stuart Parkin
Keyword(s):  
Current Density ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Torque ◽  
Free Layer ◽  
Switching Current

scholarly journals Magnetization Dynamics in a Perpendicular Anisotropy Free Layer under a Spin Torque Effect with Crossed Polarization

2020 ◽  
Vol 25 (1) ◽  
pp. 54
Author(s):  
Nafeesa Rahman ◽  
Rachid Sbiaa
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Film Plane ◽  
Spin Torque ◽  
Spin Angular Momentum ◽  
Perpendicular Anisotropy ◽  
Free Layer ◽  
Magnetization Dynamics ◽  
Magnetization Direction ◽  
Spin Polarized

The transfer of spin angular momentum from a spin polarized current provides an efficient way of reversing the magnetization direction of the free layer of the magnetic tunnel junction (MTJ), and while faster reversal will reduce the switching energy, this in turn will lead to low power consumption. In this work, we propose a design where a spin torque oscillator (STO) is integrated with a conventional magnetic tunnel junction (MTJ) which will assist in the ultrafast reversal of the magnetization of the free layer of the MTJ. The structure formed (MTJ stacked with STO), will have the free layer of the MTJ sandwiched between two spin polarizer layers, one with a fixed magnetization direction perpendicular to film plane (main static polarizer) and the other with an oscillatory magnetization (dynamic polarizer). The static polarizer is the fixed layer of the MTJ itself and the dynamic polarizer is the free layer of the STO.

scholarly journals Spin Torque Oscillator for High Performance Magnetic Memory

2015 ◽  
Vol 20 (1) ◽  
pp. 77
Author(s):  
Rachid Sbiaa ◽  
Khaled Bouziane
Keyword(s):  
High Performance ◽  
Perpendicular Magnetic Anisotropy ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetic Memory ◽  
Spin Torque ◽  
Free Layer ◽  
Switching Current ◽  
Thermal Stability Of

A study on spin transfer torque switching in a magnetic tunnel junction with perpendicular magnetic anisotropy is presented. The switching current can be strongly reduced under a spin torque oscillator (STO), and its use in addition to the conventional transport in magnetic tunnel junctions (MTJ) should be considered. The reduction of the switching current from the parallel state to the antiparallel state is greater than in  the opposite direction, thus minimizing the asymmetry of the resistance versus current in the hysteresis loop. This reduction of both switching current and asymmetry under a spin torque oscillator occurs only during the writing process and does not affect the thermal stability of the free layer.

Spin-Torque Oscillator Based on Magnetic Tunnel Junction with a Perpendicularly Magnetized Free Layer and In-Plane Magnetized Polarizer

2013 ◽  
Vol 6 (10) ◽  
pp. 103003 ◽  
Author(s):  
Hitoshi Kubota ◽  
Kay Yakushiji ◽  
Akio Fukushima ◽  
Shingo Tamaru ◽  
Makoto Konoto ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Torque ◽  
Free Layer

Spin torque in uniform magnetization

2017 ◽  
Author(s):  
Y. Suzuki
Keyword(s):  
Barrier Layer ◽  
Tunnel Junction ◽  
Spin Current ◽  
Magnetic Tunnel Junction ◽  
Spin Torque ◽  
Free Layer ◽  
Nonmagnetic Metal ◽  
Uniform Magnetization ◽  
Spin Polarized ◽  
Ferromagnetic Layers

This chapter discusses the effects of a spin current injected into a uniformly magnetized ferromagnetic cell. The junction consists of two ferromagnetic layers separated by a nonmagnetic metal interlayer or insulating barrier layer. With a nonmagnetic metal interlayer, the junction is called a giant magnetoresistive nanopillar, and with an insulating barrier layer a magnetic-tunnel junction. When charge current is passed through this device, the electrons are first spin polarized by the fixed layer and spin-polarized current is then injected into the free layer through the nonmagnetic interlayer. This spin current interacts with the spins in the host material by an exchange interaction and exerts a torque. If the exerted torque is large enough, magnetization in the free layer is reversed or continuous precession is excited.

Spin torque diode effect of the magnetic tunnel junction with MnGa free layer

2018 ◽  
Vol 112 (26) ◽  
pp. 262408 ◽  
Author(s):  
Sumito Tsunegi ◽  
Kotaro Mizunuma ◽  
Kazuya Suzuki ◽  
Hiroshi Imamura ◽  
Shingo Tamaru ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Torque ◽  
Free Layer
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