Effect of the field-like spin torque on the switching current and switching speed of magnetic tunnel junction with perpendicularly magnetized free layers

2011 ◽  
Vol 109 (2) ◽  
pp. 023916 ◽  
Author(s):  
Yan Zhou
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Torque ◽  
Switching Speed ◽  
Switching Current

scholarly journals Magnetization Dynamics in a Perpendicular Anisotropy Free Layer under a Spin Torque Effect with Crossed Polarization

2020 ◽  
Vol 25 (1) ◽  
pp. 54
Author(s):  
Nafeesa Rahman ◽  
Rachid Sbiaa
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Film Plane ◽  
Spin Torque ◽  
Spin Angular Momentum ◽  
Perpendicular Anisotropy ◽  
Free Layer ◽  
Magnetization Dynamics ◽  
Magnetization Direction ◽  
Spin Polarized

The transfer of spin angular momentum from a spin polarized current provides an efficient way of reversing the magnetization direction of the free layer of the magnetic tunnel junction (MTJ), and while faster reversal will reduce the switching energy, this in turn will lead to low power consumption. In this work, we propose a design where a spin torque oscillator (STO) is integrated with a conventional magnetic tunnel junction (MTJ) which will assist in the ultrafast reversal of the magnetization of the free layer of the MTJ. The structure formed (MTJ stacked with STO), will have the free layer of the MTJ sandwiched between two spin polarizer layers, one with a fixed magnetization direction perpendicular to film plane (main static polarizer) and the other with an oscillatory magnetization (dynamic polarizer). The static polarizer is the fixed layer of the MTJ itself and the dynamic polarizer is the free layer of the STO.

scholarly journals Bolometric Properties of a Spin-Torque Diode Based on a Magnetic Tunnel Junction

2019 ◽  
Vol 2019 ◽  
pp. 1-9 ◽  
Author(s):  
G. D. Demin ◽  
K. A. Zvezdin ◽  
A. F. Popkov
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Nonuniform Heating ◽  
Spin Torque ◽  
Rectification Effect ◽  
Wide Range ◽  
Spin Polarized ◽  
Potential Applications ◽  
Dynamic Components ◽  
Bolometric Effect

Spin caloritronics opens up a wide range of potential applications, one of which can be the thermoelectric rectification of a microwave signal by spin-diode structures. The bolometric properties of a spin-torque diode based on a magnetic tunnel junction (MTJ) in the presence of a thermal gradient through a tunnel junction are discussed. Theoretical estimates of the static and dynamic components of the microwave sensitivity of the spin-torque diode, related to thermoelectric tunnel magneto-Seebeck effect and the thermal transfer of spin angular momentum in the MTJ under nonuniform heating, are presented. Despite the fact that the thermal contribution to the microwave sensitivity of the spin-torque diode is found to be relatively small in relation to the rectification effect related to the modulation of the MTJ resistance by a microwave spin-polarized current, nevertheless, the considered bolometric effect can be successfully utilized in some real-world microwave applications.

Influence of dynamical dipolar coupling on spin-torque-induced excitations in a magnetic tunnel junction nanopillar

2012 ◽  
Vol 111 (7) ◽  
pp. 07C906 ◽  
Author(s):  
Kiwamu Kudo ◽  
Tazumi Nagasawa ◽  
Hirofumi Suto ◽  
Tao Yang ◽  
Koichi Mizushima ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Dipolar Coupling ◽  
Magnetic Tunnel Junction ◽  
Spin Torque

scholarly journals Time-domain stability of parametric synchronization in a spin-torque nano-oscillator based on a magnetic tunnel junction

2017 ◽  
Vol 96 (2) ◽  
Author(s):  
Raghav Sharma ◽  
Naveen Sisodia ◽  
Philipp Dürrenfeld ◽  
Johan Åkerman ◽  
Pranaba Kishor Muduli
Keyword(s):  
Time Domain ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Torque ◽  
Parametric Synchronization ◽  
Domain Stability
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