Co/Ni multilayers with perpendicular anisotropy for spintronic device applications

2012 ◽  
Vol 100 (17) ◽  
pp. 172411 ◽  
Author(s):  
L. You ◽  
R. C. Sousa ◽  
S. Bandiera ◽  
B. Rodmacq ◽  
B. Dieny
Keyword(s):  
Perpendicular Anisotropy ◽  
Spintronic Device ◽  
Device Applications

Transition-Metal-Atom-Embedded Graphane and Its Spintronic Device Applications

2011 ◽  
Vol 115 (46) ◽  
pp. 22701-22706 ◽  
Author(s):  
Haixia Da ◽  
Yuan Ping Feng ◽  
Gengchaiu Liang
Keyword(s):  
Transition Metal ◽  
Metal Atom ◽  
Transition Metal Atom ◽  
Spintronic Device ◽  
Device Applications

Fabrication of vertically aligned carbon nanotubes for spintronic device applications

2009 ◽  
Vol 19 (39) ◽  
pp. 7216 ◽  
Author(s):  
Elby Titus ◽  
Manoj K. Singh ◽  
Gil Cabral ◽  
Vladimir Paserin ◽  
P. Ramesh Babu ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Vertically Aligned Carbon Nanotubes ◽  
Spintronic Device ◽  
Aligned Carbon Nanotubes ◽  
Device Applications ◽  
Vertically Aligned

scholarly journals Designing new ferromagnetic double perovskites: the coexistence of polar distortion and half-metallicity

2021 ◽  
Author(s):  
Neda Rahmani ◽  
Mohammad Ebrahim Ghazi ◽  
Morteza Izadifard ◽  
Alireza Shabani ◽  
Jost Adam
Keyword(s):  
Double Perovskites ◽  
Half Metallicity ◽  
Spintronic Device ◽  
Device Applications

The concurrence of half-metallicity and polar nature in Ca2MnVO6 and Ba2MnVO6 double perovskites making them suitable candidates for spintronic device applications.

Tailoring TMR Ratios by Ultrathin Magnetic Interlayers: A First-principles Investigation of Fe/MgO/Fe

2009 ◽  
Vol 1183 ◽  
Author(s):  
Peter Bose ◽  
Peter Zahn ◽  
Juergen Henk ◽  
Ingrid Mertig
Keyword(s):  
First Principles ◽  
Lattice Mismatch ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Buffer Layers ◽  
Spintronic Device ◽  
Single Interface ◽  
Small Lattice ◽  
Device Applications ◽  
Experimental Findings

AbstractFor spintronic device applications, large and in particular tunable tunnel magnetoresistance (TMR) ratios are inevitable. Fully crystalline and epitaxially grown Fe/MgO/Fe magnetic tunnel junctions (MTJs) are well suited for this purpose and, thus, are being intensively studied [1]. However, due to imperfect interfaces it is difficult to obtain sufficiently large TMR ratios that fulfill industrial demands (e.g. [2]).A new means to increase TMR ratios is the insertion of ultra-thin metallic buffer layers at one or at both of the Fe/MgO interfaces. With regard to their magnetic and electronic properties as well as their small lattice mismatch to Fe(001), Co and Cr spacer are being preferably investigated.We report on a systematic first-principles study of the effect of Co and Cr buffers (with thicknesses up to 6 ML) in Fe/MgO/Fe magnetic tunnel junctions (MTJs) on the spin-dependent conductance. The results of the transport calculations reveal options to specifically tune the TMR ratio. Symmetric junctions, i.e. with Co buffers at both interfaces, exhibit for some thicknesses much larger TMR ratios in comparison to those obtained for Fe-only electrodes. Further, antiferromagnetic Cr films at a single interface introduce TMR oscillations with a period of 2 ML, a feature which provides another degree of freedom in device applications. The comparison of our results with experimental findings shows agreement and highlights the importance of interfaces for the TMR effect.

Epitaxial growth of cobalt oxide phases on Ru(0001) for spintronic device applications

2017 ◽  
Vol 32 (9) ◽  
pp. 095011 ◽  
Author(s):  
Opeyemi Olanipekun ◽  
Chad Ladewig ◽  
Jeffry A Kelber ◽  
Michael D Randle ◽  
Jubin Nathawat ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Cobalt Oxide ◽  
Spintronic Device ◽  
Oxide Phases ◽  
Device Applications

Achieving perpendicular anisotropy in half-metallic Heusler alloys for spin device applications

2014 ◽  
Vol 115 (17) ◽  
pp. 17B731 ◽  
Author(s):  
Kamaram Munira ◽  
Jonathon Romero ◽  
William H. Butler
Keyword(s):  
Heusler Alloys ◽  
Perpendicular Anisotropy ◽  
Half Metallic ◽  
Device Applications

Magnetotransport Properties in Semimetallic Bismuth Thin Films

2004 ◽  
Vol 449-452 ◽  
pp. 1061-1064 ◽  
Author(s):  
K.I. Lee ◽  
M.H. Jeun ◽  
J.M. Lee ◽  
J.Y. Chang ◽  
S.H. Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Room Temperature ◽  
The Other ◽  
Trigonal Axis ◽  
Spintronic Device ◽  
Sputtered Films ◽  
Other Hand ◽  
Device Applications

The magnetotransport properties of the electroplated and sputtered Bi thin films have been investigated in the range 4 – 300 K. A marked increase from 5,200 % to 80,000 % in the ordinary magnetoresistance (MR) for the electroplated Bi thin film was observed after thermal anneal at 4 K. The MR ratios for the as-grown and the annealed Bi thin films were found to exhibit 560 % and 590 %, respectively, at 300 K. On the other hand, the MR for the sputtered Bi film grown by sputtering was hardly observed at 4 and 300 K, whereas the MR ratios after anneal were found to reach 30,000 % at 4 K and 600 % at 300 K. We find that the room temperature MR in the sputtered films depends on the trigonal-axis oriented microstructures and grain size, in contrast to the electroplated films. Our results demonstrate the very large room temperature MR in the electroplated and sputtered Bi thin films, which can be used for spintronic device applications.

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