Structural, optical and morphological properties of Ga1−xMnxAs thin films deposited by magnetron sputtering for spintronic device applications

2012 ◽  
Vol 407 (16) ◽  
pp. 3210-3213 ◽  
Author(s):  
M.E. Bernal ◽  
A. Dussan ◽  
F. Mesa
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Morphological Properties ◽  
Spintronic Device ◽  
Device Applications

Effect of Temperature on the Optical and Morphological Properties of Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1115 ◽  
pp. 422-425
Author(s):  
Souad A.M. Al-Bat’hi ◽  
Maizatulnisa Othman
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Deposition Temperature ◽  
Rf Magnetron Sputtering ◽  
Morphological Properties ◽  
Zno Thin Films ◽  
Effect Of Temperature

This investigation deals with the effect of temperature on the optical and morphological properties of Zinc Oxide thin films prepared by radio-Frequency (RF) magnetron sputtering technique. In the present work, zinc oxide (ZnO) thin films have been deposited on glass substrates from 50°C to 300°C by radio frequency magnetron sputtering. The effects of deposition temperature on the crystallization behaviour and optical properties of the films have been studied. The thin films were characterized using Ultraviolet Visible Spectroscopy (UV-VIS), Field Emission Scanning Electron Microscopy (FESEM) and X-ray Diffraction Analysis (XRD). From the UV-VIS testing, the average transmission percentage of the films is between 80-95% for all deposition temperatures meanwhile the energy gap of ZnO thin films varies from 3.26 eV to 3.35 eV which is not much different from the theoretical value. Also, the grain size is getting smaller from 3.886nm, 3.216nm, 3.119nm and 3.079nm with respect to the increasing deposition temperature 50°C, 100°C, 200°C and 300°C respectively whereas the average grain size per intercept value is increasing. The patterns of the peak were about the same for all deposition temperature where the thin films have polycrystalline hexagonal wurtzite structure with the orientation perpendicular (002) to the substrate surface (c-axis orientation) at 34.5(2θ).

Rf Magnetron Sputtering Epitaxially Grown (Pb,La)TiO3 Thin Films on (0001) A12O3 and (001) SrTiO3 for Nonlinear Optical Applications

1998 ◽  
Vol 541 ◽  
Author(s):  
U. Rabibisoa ◽  
B. Agius
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nonlinear Optical ◽  
Rf Magnetron Sputtering ◽  
Morphological Properties ◽  
Optical Losses ◽  
Optical Applications ◽  
Film Substrate ◽  
Nonlinear Optical Applications ◽  
Air Film

AbstractFerroelectrics are known to be excellent materials for nonlinear optics. Miniaturization of circuits using these materials requires an optimization of structural and morphological properties of thin films, to minimize optical losses. The first condition is the use of epitaxially grown thin films. The second one is the optimization of the morphological properties, in particular the roughness at the air/film and film/substrate interfaces must be the lowest possible.The aim of this work is to study the effect of the deposition atmosphere on these properties for PLT thin films grown on (0001) A12O3 and (001) SrTiO3.

scholarly journals Influence of indium and hydrogen co-doping on optical and electrical properties of zinc oxide thin films deposited by DC magnetron sputtering

2019 ◽  
Vol 22 (2) ◽  
pp. 253-257
Author(s):  
Nguyen Huu Truong ◽  
Tinh Van Nguyen ◽  
Tuan Anh Thanh Pham ◽  
Dung Van Hoang ◽  
Hung Minh Vu ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Magnetron Sputtering ◽  
Hydrogen Plasma ◽  
Response Speed ◽  
Indium Content ◽  
Morphological Properties ◽  
High Electron ◽  
Dc Magnetron Sputtering ◽  
Doped Zno

Introduction: ZnO-based thin films, known as potential transparent-conducting oxides (TCO), have still attracted much attention in applications for good-performance electrodes and inner layers in solar cells. Recently, the research tendency has focused on improving carrier mobility rather than carrier concentration to enhance performance and response speed of TCO thin films. In this work, Indium, and Hydrogen co-doped ZnO (HIZO) thin films were deposited by using DC magnetron sputtering technique in hydrogen-plasma atmosphere. Methods: Indium-doped ZnO ceramics were used as sputtering targets, in which, Indium content varied from 0.07 to 1.0 at.%. The electrical, optical, structural and surface morphological properties of the as-deposited films were investigated by using Hall effect-based measurement, UV-Vis spectra, X-ray diffraction (XRD) and fieldemission scanning electron microscopy (FE-SEM), respectively. Results: As a result, the HIZO films sputtered from the 0.1 at.% In-doped ZnO target and at H2/(H2+Ar) ratio of 3.5% exhibit high electron mobility (47 cm2/Vs), the lowest resistivity (4.9x10-4 Ω.cm) and sheet resistance (4.7 Ω/sq.), simultaneously, high average transmittance (>80%) in the visible – near IR spectrum regions. Conclusion: Based on these results, the HIZO films are considered as potential TCO thin films that can be well-used as transparent electrodes in solar cells.  

Development of Magnetostrictive Fe-Ga and Fe-Pd Thin Films

2004 ◽  
Vol 855 ◽  
Author(s):  
Teiko Okazaki ◽  
Satoru Watanabe ◽  
Norimasa Okanisi ◽  
Toshiro Ono ◽  
Yasubumi Furuya ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
Alternating Magnetic Field ◽  
Sensor Systems ◽  
Sensor Actuator ◽  
Small Magnetic Field ◽  
Beam Method ◽  
Device Applications

ABSTRACTThe giant magnetostrictive films exhibit promising device applications for micro-machines and sensor systems due to high response velocity and huge stress created by the magnetostriction. We developed magnetostrictive bimorph-type Fe70Pd30 or Fe83Ga17 (positive magnetostriction)/Al/Ni(negative magnetostriction) thin films by magnetron sputtering. Magnetostriction of these films measured by a bending cantilever beam method has reached 250–300 ppm in the small magnetic field of 1.0 kOe and exhibits little hysteresis. Moreover, the magnetostrictive characteristics do not change under low alternating magnetic field. The magnetoelastic coefficient of these films is 25∼30 MPa, which is comparable to the coefficient of the PbTiO3-PbZrO3 system. These metallic sensor/actuator materials are useful for applications in magnetostrictive 2D- scanners and remote-interrogated tire sensors.

CHARACTERIZATION OF NICKEL OXIDE THIN FILM — DC REACTIVE MAGNETRON SPUTTERING

2011 ◽  
Vol 18 (01n02) ◽  
pp. 11-15 ◽  
Author(s):  
K. ASHOK
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
Deposition Time ◽  
Preferred Orientation ◽  
Oxide Thin Film ◽  
Morphological Properties ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force

Nickel oxide ( NiO ) thin films were deposited on glass substrates by reactive direct current (DC) magnetron sputtering of a Ni target in an Ar / O 2 mixture. The effect of thickness (0.2 μm, 0.4 μm and 1 μm) on the structural and surface morphological properties of NiO thin films was investigated. These films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM). The films were cubic NiO , with preferred orientation in the (111) direction at lower deposition time (10 mins). At higher deposition time (60 mins) the preferred orientation shifted to (200) plane. Electrochemical behavior of NiO thin films for different thickness samples were analyzed between the electrode potential ‑0.2 and 0.8 V vs scanning calomel electrode (SCE) in both anodic and cathodic directions and the current responses were measured.

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