Ab initio study of vacancy and self-interstitial properties near single crystal silicon surfaces

2012 ◽  
Vol 111 (8) ◽  
pp. 083507 ◽  
Author(s):  
Eiji Kamiyama ◽  
Koji Sueoka ◽  
Jan Vanhellemont
Keyword(s):  
Single Crystal ◽  
Ab Initio ◽  
Single Crystal Silicon ◽  
Silicon Surfaces ◽  
Ab Initio Study ◽  
Crystal Silicon

Fracture fabrication of precision single-crystal silicon surfaces for MEMS devices

2011 ◽  
Vol 35 (3) ◽  
pp. 406-415
Author(s):  
Alexander Sprunt ◽  
Alexander Slocum ◽  
Jeffrey H. Lang
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Surfaces ◽  
Mems Devices ◽  
Crystal Silicon

Reactivity of selectively terminated single crystal silicon surfaces

2010 ◽  
Vol 39 (8) ◽  
pp. 3256 ◽  
Author(s):  
Kathryn A. Perrine ◽  
Andrew V. Teplyakov
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Surfaces ◽  
Crystal Silicon

A TEMPERATURE-PROGRAMED DESORPTION STUDY OF THE ADSORPTION AND REACTIONS OF D2O ON SINGLE CRYSTAL SILICON SURFACES

1994 ◽  
Vol 01 (04) ◽  
pp. 505-507
Author(s):  
M.C. FLOWERS ◽  
N.B.H. JONATHAN ◽  
A. MORRIS ◽  
S. WRIGHT
Keyword(s):  
Single Crystal ◽  
Adsorption Kinetics ◽  
Single Crystal Silicon ◽  
Silicon Surfaces ◽  
Crystal Surfaces ◽  
Crystal Silicon ◽  
Single Crystal Surfaces ◽  
Langmuir Adsorption ◽  
First Order ◽  
Desorption Study

The adsorption of D 2O and subsequent desorption of D 2 and SiO from Si(100)-2×1 and Si(111)-7×7 single crystal surfaces have been investigated using the technique of temperatureprogramed desorption. It has been found that adsorption on Si(100)-2×1 is rapid and can be interpreted in terms of first-order Langmuir adsorption kinetics. In contrast, adsorption on the Si(111)-7×7 surface proceeds at a very much slower rate following an initial rapid uptake. It is found that the D 2 TPD peak arising from D 2 O exposure is very similar in shape, width, and desorption temperature to that from atomic deuterium exposure except that a small fraction of the adsorbed deuterium is retained to higher temperatures.

Nanometric cutting of single crystal silicon surfaces modified by ion implantation

CIRP Annals ◽  
2011 ◽  
Vol 60 (1) ◽  
pp. 527-530 ◽  
Author(s):  
F.Z. Fang ◽  
Y.H. Chen ◽  
X.D. Zhang ◽  
X.T. Hu ◽  
G.X. Zhang
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Surfaces ◽  
Crystal Silicon ◽  
Nanometric Cutting

An Investigation of Pool Boiling Heat Transfer on Single Crystal Surfaces and a Dense Array of Cylindrical Cavities

2013 ◽  
Vol 135 (12) ◽  
Author(s):  
Bradley Bon ◽  
James Klausner ◽  
Edward McKenna
Keyword(s):  
Heat Transfer ◽  
Heat Transfer Coefficient ◽  
Single Crystal ◽  
Transfer Coefficient ◽  
Single Crystal Silicon ◽  
Silicon Surfaces ◽  
Crystal Surfaces ◽  
Crystal Silicon ◽  
Single Crystal Surfaces ◽  
Cylindrical Cavities

The pool boiling heat transfer characteristics of smooth single crystal and densely packed cylindrical cavity surfaces were investigated using two highly wetting fluids, perfluoro-n-hexane (FC-72) and n-hexane. Three single crystal copper surfaces and five undoped single crystal silicon surfaces with different plane orientations were considered. In addition, silicon surfaces with densely packed cylindrical cavities with diameters ranging from 9 to 75 μm, depth ranging from 9 to 20 μm, and spacing ranging from 75 to 600 μm were tested for comparison. It is observed that the copper single crystal surfaces show increasing heat transfer coefficient with decreasing atomic planar density. The single crystal silicon surfaces show increasing heat transfer coefficient with increasing atomic planar density. Plausible molecular scale mechanisms are discussed. In contrast, the silicon surfaces seeded with cylindrical cavities having diameters of 27 μm or less generally yield higher heat transfer coefficients than the single crystal silicon surfaces. A decrease in the cavity spacing results in a larger number of cavities on the surface, and the heat transfer coefficient increases as a result. Cavity depths of 6 and 20 μm result in the same heat transfer coefficient irrespective of cavity diameter. The nucleation site density for the cylindrical cavity surfaces is measured and reported at low superheat using a novel imaging technique.

Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces

2021 ◽  
Vol 55 (2) ◽  
pp. 137-145
Author(s):  
N. T. Bagraev ◽  
S. A. Kukushkin ◽  
A. V. Osipov ◽  
V. V. Romanov ◽  
L. E. Klyachkin ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Surfaces ◽  
Substitution Method ◽  
Crystal Silicon
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