Far‐infrared reflection–absorption spectroscopy of thin polyethylene oxide films

1994 ◽  
Vol 101 (4) ◽  
pp. 2746-2751 ◽  
Author(s):  
V. M. Da Costa ◽  
T. G. Fiske ◽  
L. B. Coleman
Keyword(s):  
Absorption Spectroscopy ◽  
Polyethylene Oxide ◽  
Oxide Films ◽  
Far Infrared ◽  
Infrared Reflection Absorption Spectroscopy ◽  
Infrared Reflection ◽  
Thin Polyethylene

Infrared Reflection Absorption Spectroscopy of Naturally Grown Oxide Films on Chrome and the Dependence of the Berreman Effect on Film Thickness

1997 ◽  
Vol 51 (6) ◽  
pp. 844-848 ◽  
Author(s):  
Th. Scherübl ◽  
L. K. Thomas
Keyword(s):  
Film Thickness ◽  
Absorption Spectroscopy ◽  
Optical Constants ◽  
Oxide Films ◽  
Thickness Dependence ◽  
Experimental Results ◽  
Spectral Position ◽  
Infrared Reflection Absorption Spectroscopy ◽  
Thickness Determination ◽  
Infrared Reflection

The thickness dependence of the Berreman effect for naturally grown oxide films on chrome is analyzed theoretically and experimentally. The shift of the spectral position of the Berreman minimum can be described by the Fuchs–Kliewer theory of virtual modes. Both the absorption and the shift of the position can be used for thickness determination. The experimental results compared with calculated values based on different optical constants for Cr2O3 indicate their influence on the position and the absorption of the Berreeman minimum.

New Analytical Method of SiO2 Structure by Infrared Reflection Absorption Spectroscopy (Ir-Ras)

1993 ◽  
Vol 318 ◽  
Author(s):  
K. Ishikawa ◽  
H. Ogawa ◽  
C. Inomata ◽  
S. Fujimura ◽  
H. Mori
Keyword(s):  
Thin Films ◽  
Dielectric Function ◽  
Absorption Spectroscopy ◽  
Analytical Method ◽  
Oxide Films ◽  
Interface Structure ◽  
Infrared Reflection Absorption Spectroscopy ◽  
Infrared Reflection ◽  
Phonon Peak ◽  
Viable Method

ABSTRACTSimulation of a thin oxide RAS spectrum obtained by using the dielectric function extracted from thick oxide RAS spectra is shown to be a viable method for the comparison of oxide films of differing thickness. Bulk and near-interfacial features of thermally grown SiO2 thin films were studied by this method and it was found that the LO phonon peak at about 1255 cm−1 reflects bulk SiO2 structure and a higher reflectance between 1100 and 1200 cm−1 reflects SiO2/Si interface structure.

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