Cation dependence of the vibrational and rotational relaxation of OH− ion in molten MOH(M=Li, Na, K, Rb, and Cs) by Raman scattering measurements

1991 ◽  
Vol 94 (4) ◽  
pp. 3101-3106 ◽  
Author(s):  
Norikazu Ohtori ◽  
Susumu Okazaki ◽  
Isao Okada
1993 ◽  
Author(s):  
WALTER GILLESPIE ◽  
DANIEL BERSHADER ◽  
SURENDRA SHARMA ◽  
STEPHEN RUFFIN

1971 ◽  
Vol 54 (2) ◽  
pp. 644-647 ◽  
Author(s):  
H. E. Bass ◽  
T. G. Winter ◽  
L. B. Evans

1991 ◽  
Vol 220 ◽  
Author(s):  
R. C. Bowman ◽  
P. M. Adams ◽  
S. J. Chang ◽  
V. Arbet-Engels ◽  
K. L. Wang

ABSTRACTInterface mixing between the Ge and Si layers in symmetrically strained SimGem superlattices occurs during post growth thermal anneals. Interdiffusion coefficients were obtained from intensity changes in the low angle superlattice x-ray satellites on samples with nominal periodicities between 1.4nm and 5.6nm. A common activation energy of 3.0±0.1 eV was found. The bulk interdiffusion coefficients for SimGem were derived since measurements were made on samples with different layer thicknesses. Intermixing appears to occur by diffusion of Si atoms into the Ge layers via a vacancy mechanism. Raman scattering measurements support this process as well as the formation of Si1−xGex, alloy layers during the anneals.


2002 ◽  
Vol 307-310 ◽  
pp. 135-141 ◽  
Author(s):  
S Caponi ◽  
M Ferrari ◽  
A Fontana ◽  
C Masciovecchio ◽  
A Mermet ◽  
...  

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