Calculation of temperature‐dependent multimode resonance Raman line shapes for harmonic potential surfacesa)

1985 ◽  
Vol 82 (7) ◽  
pp. 2918-2926 ◽  
Author(s):  
Richard Friesner ◽  
Montgomery Pettitt ◽  
John M. Jean
1982 ◽  
Vol 26 (1) ◽  
pp. 341-355 ◽  
Author(s):  
Shaul Mukamel ◽  
Danielle Grimbert ◽  
Yitzhak Rabin

2004 ◽  
Vol 76 (1) ◽  
pp. 147-155 ◽  
Author(s):  
M. Musso ◽  
F. Matthai ◽  
D. Keutel ◽  
K.-L. Oehme

Isotropic Raman line shapes of simple molecular fluids exhibit critical line broadening near their respective liquid-gas critical points. In order to observe this phenomenon, it is essential that the band position of a given vibrational mode is density-dependent, and that vibrational depopulation processes negligibly contribute to line broadening. Special attention was given to the fact that the isotropic (i.e., nonrotationally broadened) line shape of liquid N2 is affected by resonant intermolecular vibrational interactions between identical oscillators. By means of the well-chosen isotopic mixture (14N2).975 - (14N15N).025, the temperature and density dependences of shift, width, and asymmetry of the resonantly coupled 14N2 and, depending on the S/N ratio available, of the resonantly uncoupled 14N15N were determined, with up to milli-Kelvin resolution, in the coexisting liquid and gas phases and along the critical isochore, using a highest-resolution double monochromator and modern charge-coupled device detection techniques. Clear evidence was found that vibrational resonance couplings are present in all dense phases studied.


Crystals ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 235 ◽  
Author(s):  
Andrii Nikolenko ◽  
Viktor Strelchuk ◽  
Bogdan Tsykaniuk ◽  
Dmytro Kysylychyn ◽  
Giulia Capuzzo ◽  
...  

Resonance Raman analysis is performed in order to gain insight into the nature of impurity-induced Raman features in GaN:(Mn,Mg) hosting Mn-Mgk cation complexes and representing a prospective strategic material for the realization of full-nitride photonic devices emitting in the infra-red. It is found that in contrast to the case of GaN:Mn, the resonance enhancement of Mn-induced modes at sub-band excitation in Mg co-doped samples is not observed at an excitation of 2.4 eV, but shifts to lower energies, an effect explained by a resonance process involving photoionization of a hole from the donor level of Mn to the valence band of GaN. Selective excitation within the resonance Raman conditions allows the structure of the main Mn-induced phonon band at ~670 cm−1 to be resolved into two distinct components, whose relative intensity varies with the Mg/Mn ratio and correlates with the concentration of different Mn-Mgk cation complexes. Moreover, from the relative intensity of the 2LO and 1LO Raman resonances at inter-band excitation energy, the Huang-Rhys parameter has been estimated and, consequently, the strength of the electron-phonon interaction, which is found to increase linearly with the Mg/Mn ratio. Selective temperature-dependent enhancement of the high-order multiphonon peaks is due to variation in resonance conditions of exciton-mediated outgoing resonance Raman scattering by detuning the band gap.


1971 ◽  
Vol 39 (2) ◽  
pp. 154-158
Author(s):  
I. Laulicht ◽  
V. Halpern

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