Pulsed molecular beam study of state‐to‐state vibrational excitation in He+I2 collisions: Energy dependence of the v=0→1 cross section

1983 ◽  
Vol 78 (8) ◽  
pp. 5260-5261 ◽  
Author(s):  
Gregory Hall ◽  
Kopin Liu ◽  
Michael J. McAuliffe ◽  
Clayton F. Giese ◽  
W. Ronald Gentry
Keyword(s):  
Energy Dependence ◽  
Cross Section ◽  
Molecular Beam ◽  
Vibrational Excitation

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

The energy dependence of the 4d photoionization cross-section of In and Sb

1976 ◽  
Vol 57 (3) ◽  
pp. 225-226 ◽  
Author(s):  
I. Lindau ◽  
P. Pianetta ◽  
W.E. Spicer
Keyword(s):  
Energy Dependence ◽  
Cross Section ◽  
Photoionization Cross Section

Rearrangement collisions: two-particle exchange

1964 ◽  
Vol 277 (1369) ◽  
pp. 206-213 ◽  
Keyword(s):  
Energy Dependence ◽  
Cross Section ◽  
Born Approximation ◽  
High Energy ◽  
Electron Exchange ◽  
Final States ◽  
Particle Exchange ◽  
Exchange Cross Section

It is shown that the first Bom approximation for the exchange of two uncorrelated electrons should vanish. A formalism for the T matrix is presented which has this property. The high-energy result for the two-electron exchange cross-section previously calculated in first Born approximation behaves like E -7 . This result is in error due to a lack of orthogonality of initial and final states. When this is corrected the result for uncorrelated electrons has an energy dependence E -11 . The introduction of correlation gives terms behaving like E -10 which cannot be calculated unam biguously.

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