A merged molecular beam study of the endoergic associative ionization reaction N(2D)+O(3P) →NO++e−

1979 ◽  
Vol 71 (4) ◽  
pp. 1902-1909 ◽  
Author(s):  
Geoffrey Ringer ◽  
W. Ronald Gentry
Keyword(s):  
Molecular Beam ◽  
Ionization Reaction ◽  
Associative Ionization

scholarly journals Modelling of an Atmospheric–Pressure Air Glow Discharge Operating in High–Gas Temperature Regimes: The Role of the Associative Ionization Reactions Involving Excited Atoms

Plasma ◽  
2020 ◽  
Vol 3 (1) ◽  
pp. 12-26
Author(s):  
Ezequiel Cejas ◽  
Beatriz Mancinelli ◽  
Leandro Prevosto
Keyword(s):  
Atmospheric Pressure ◽  
Vibrational Excitation ◽  
Thermal Dissociation ◽  
Ionization Mechanism ◽  
Gas Temperature ◽  
Excited Atoms ◽  
Temperature Regimes ◽  
Ionization Reaction ◽  
Associative Ionization

A model of a stationary glow-type discharge in atmospheric-pressure air operated in high-gas-temperature regimes (1000 K < Tg < 6000 K), with a focus on the role of associative ionization reactions involving N(2D,2P)-excited atoms, is developed. Thermal dissociation of vibrationally excited nitrogen molecules, as well as electronic excitation from all the vibrational levels of the nitrogen molecules, is also accounted for. The calculations show that the near-threshold associative ionization reaction, N(2D) + O(3P) → NO+ + e, is the major ionization mechanism in air at 2500 K < Tg < 4500 K while the ionization of NO molecules by electron impact is the dominant mechanism at lower gas temperatures and the high-threshold associative ionization reaction involving ground-state atoms dominates at higher temperatures. The exoergic associative ionization reaction, N(2P) + O(3P) → NO+ + e, also speeds up the ionization at the highest temperature values. The vibrational excitation of the gas significantly accelerates the production of N2(A3∑u+) molecules, which in turn increases the densities of excited N(2D,2P) atoms. Because the electron energy required for the excitation of the N2(A3∑u+) state from N2(X1∑g+, v) molecules (e.g., 6.2 eV for v = 0) is considerably lower than the ionization energy (9.27 eV) of the NO molecules, the reduced electric field begins to noticeably fall at Tg > 2500 K. The calculated plasma parameters agree with the available experimental data.

Molecular beam study of the chemi‐ionization reaction: Ba+Cl2→BaCl++Cl−

1980 ◽  
Vol 73 (4) ◽  
pp. 1612-1616 ◽  
Author(s):  
Randolph H. Burton ◽  
John H. Brophy ◽  
Charles A. Mims ◽  
John Ross
Keyword(s):  
Molecular Beam ◽  
Ionization Reaction

Associative ionization reaction N + O → NO+ + e– in slow collisions of atoms

2016 ◽  
Vol 50 (2) ◽  
pp. 85-91 ◽  
Author(s):  
G. K. Ozerov ◽  
M. G. Golubkov ◽  
G. V. Golubkov ◽  
N. S. Malyshev ◽  
S. O. Adamson ◽  
...  
Keyword(s):  
Ionization Reaction ◽  
Associative Ionization

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

STM studies of crystal growth

1991 ◽  
Vol 49 ◽  
pp. 374-375
Author(s):  
M. G. Lagally
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Sputter Deposition ◽  
Field Of View ◽  
Scanning Tunneling ◽  
Wide Field ◽  
Tunneling Microscopy ◽  
Wide Field Of View ◽  
The One

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.

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