Characteristics of trapped electrons and electron traps in single crystals

1979 ◽  
Vol 70 (11) ◽  
pp. 5040-5044 ◽  
Author(s):  
Edwin E. Budzinski ◽  
William R. Potter ◽  
George Potienko ◽  
Harold C. Box
Keyword(s):  
Single Crystals ◽  
Electron Traps ◽  
Trapped Electrons

ChemInform Abstract: CHARACTERISTICS OF TRAPPED ELECTRONS AND ELECTRON TRAPS IN SINGLE CRYSTALS

1979 ◽  
Vol 10 (40) ◽  
Author(s):  
E. E. BUDZINSKI ◽  
W. R. POTTER ◽  
G. POTIENKO ◽  
H. C. BOX
Keyword(s):  
Single Crystals ◽  
Electron Traps ◽  
Trapped Electrons

Trapped electrons in irradiated single crystals of polyhydroxy compounds

1979 ◽  
Vol 70 (3) ◽  
pp. 1320-1325 ◽  
Author(s):  
Harold C. Box ◽  
Edwin E. Budzinski ◽  
Harold G. Freund ◽  
William R. Potter
Keyword(s):  
Single Crystals ◽  
Trapped Electrons ◽  
Polyhydroxy Compounds

ChemInform Abstract: TRAPPED ELECTRONS IN IRRADIATED SINGLE CRYSTALS OF POLYHYDROXY COMPOUNDS

1979 ◽  
Vol 10 (23) ◽  
Author(s):  
H. C. BOX ◽  
E. E. BUDZINSKI ◽  
H. G. FREUND ◽  
W. R. POTTER
Keyword(s):  
Single Crystals ◽  
Trapped Electrons ◽  
Polyhydroxy Compounds

Deep-Level Defects in Nitrogen-Doped 6H-SiC Grown by PVT Method

2008 ◽  
Vol 1069 ◽  
Author(s):  
Pawel Kaminski ◽  
Michal Kozubal ◽  
Krzysztof Grasza ◽  
Emil Tymicki
Keyword(s):  
Single Crystals ◽  
Defect Structure ◽  
Deep Level ◽  
Nitrogen Concentration ◽  
Activation Energies ◽  
Electron Traps ◽  
Nitrogen Doped ◽  
Significant Change

ABSTRACTAn effect of the nitrogen concentration on the concentrations of deep-level defects in bulk 6H-SiC single crystals is investigated. Six electron traps labeled as T1A, T1B, T2, T3, T4 and T5 with activation energies of 0.34, 0.40, 0.64, 0.67, 0.69, and 1.53 eV, respectively, were revealed. The traps T1A (0.34 eV) and T1B (0.40 eV), observed in the samples with the nitrogen concentration ranging from ∼2×1017 to 5×1017 cm−3, are attributed to complexes formed by carbon vacancies located at various lattice sites and carbon antisites. The concentrations of traps T2 (0.64 eV) and T3 (0.67 eV) have been found to rise from ∼5×1015 to ∼1×1017 cm−3 with increasing the nitrogen concentration from ∼2×1017 to ∼2.0×1018 cm−3. These traps are assigned to complexes involving silicon vacancies occupying hexagonal and quasi-cubic sites, respectively, and nitrogen atoms. The trap T4 (0.69 eV) concentration also substantially rises with increasing the nitrogen concentration and it is likely to be related to complexes formed by carbon antisites and nitrogen atoms. The midgap trap T5 (1.53 eV) is presumably associated with vanadium contamination. The presented results show that doping with nitrogen involves a significant change in the defect structure of 6H-SiC single crystals.

Absorption spectrum of trapped electrons in rhamnose single crystals x irradiated at 4 K

1982 ◽  
Vol 76 (11) ◽  
pp. 5647-5648 ◽  
Author(s):  
A. S. W. Li ◽  
Larry Kevan ◽  
T. Fujimura
Keyword(s):  
Absorption Spectrum ◽  
Single Crystals ◽  
Trapped Electrons

Electron Traps in Rutile TiO2 Crystals: Intrinsic Small Polarons, Impurities, and Oxygen Vacancies

2015 ◽  
Vol 1731 ◽  
Author(s):  
Larry E. Halliburton
Keyword(s):  
Single Crystals ◽  
Ground State ◽  
Oxygen Vacancies ◽  
Laser Light ◽  
Large Family ◽  
Electron Traps ◽  
Bulk Single Crystals ◽  
State Models ◽  
Small Polarons ◽  
Trapped Electron

ABSTRACTRutile TiO2 is well known for its ability to “trap” photoinduced electrons at Ti4+ ions and form Ti3+ ions with an unpaired d1 electron. This has been shown experimentally to result in a large family of similar, yet slightly different, Ti3+-related centers that include both intrinsic small polarons and donor-bound small polarons. In these latter centers, the Ti3+ ion is located next to an oxygen vacancy or an impurity such as fluorine, lithium, or hydrogen. These small polarons are easily formed in commercially available bulk single crystals of rutile TiO2 by illuminating oxidized (and nominally undoped) samples at temperatures between 5 and 30 K with sub-band-gap laser light (e.g., 442 nm) or by slight reducing treatments (in the case of hydrogen). Once formed, the ground states of the defects are readily studied at low temperature with magnetic resonance (EPR and ENDOR). Single crystals of rutile TiO2 provide complete sets of angular dependence data, and thus allow detailed information about the ground-state models of the electron traps to be extracted in the form of g matrices and hyperfine matrices. In this review, the differences and similarities of the various Ti3+-related trapped electron centers are described.

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