ESR of nitrogen atoms in multiple trapping sites—Nitrogen matrix

1978 ◽  
Vol 68 (5) ◽  
pp. 2252-2256 ◽  
Author(s):  
D. D. Delannoy ◽  
B. Tribollet ◽  
F. Valadier ◽  
A. Erbeia
Keyword(s):  
Multiple Trapping ◽  
Trapping Sites

Multiple Trapping Sites for Hydrogen Atoms in Rare Gas Matrices

1960 ◽  
Vol 32 (4) ◽  
pp. 963-971 ◽  
Author(s):  
S. N. Foner ◽  
E. L. Cochran ◽  
V. A. Bowers ◽  
C. K. Jen
Keyword(s):  
Rare Gas ◽  
Hydrogen Atoms ◽  
Multiple Trapping ◽  
Trapping Sites

Hydrogen Dynamics and Tee Distribution of H Sites in Undoped a-Si:H and a-Ge:H

1991 ◽  
Vol 219 ◽  
Author(s):  
R. Shinar ◽  
X.-L. Wu ◽  
S. Mitra ◽  
J. Shinar
Keyword(s):  
Mass Spectrometry ◽  
Activation Energy ◽  
Long Range ◽  
Secondary Ion Mass Spectrometry ◽  
Ir Studies ◽  
Multiple Trapping ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Trapping Sites

ABSTRACTSecondary ion mass spectrometry and IR studies of long-range hydrogen motion in undoped a-Si:H and a-Ge:H of varying H content and microstructure are reviewed and discussed. In particular, their relation to the multiple trapping (MT) model, the role of microvoids, the significance of the Meyer-Neldel relation (MNR), and the nature of H sites is addressed. It is suggested that while the MT mechanism may be significant in a-Si:H of low H content Cfj, it is largely marginal in films where CH ≥ 10 at.% H and in a-Ge:H. Mono Si-H bonds on microvoid surfaces are apparently deep H trapping sites up to ∼ 400°C, but H is desorbed from such sites in a-Ge:H above 180°C. The MNR between the diffusional activation energy and prefactor is observed among the various a-Si:H and a-Ge:H, but its significance is questionable, and may be due to the MT mechanism only in low H content a-Si:H. The nature of the distribution of H sites is also discussed.

Multiple Trapping Sites for Hydrogen Atoms in Solid Argon

1959 ◽  
Vol 2 (2) ◽  
pp. 43-45 ◽  
Author(s):  
E. L. Cochran ◽  
V. A. Bowers ◽  
S. N. Foner ◽  
C. K. Jen
Keyword(s):  
Hydrogen Atoms ◽  
Multiple Trapping ◽  
Solid Argon ◽  
Trapping Sites

Multiple trapping sites for potassium atoms in argon matrices

1974 ◽  
Vol 48 (2) ◽  
pp. 143-144 ◽  
Author(s):  
H.J. Coufal ◽  
M. Burger ◽  
U. Nagel ◽  
E. Lüscher ◽  
K. Böning ◽  
...  
Keyword(s):  
Multiple Trapping ◽  
Argon Matrices ◽  
Trapping Sites

INFRARED ABSORPTION OF FORMALDEHYDE AT LOW TEMPERATURES: EVIDENCE FOR MULTIPLE TRAPPING SITES IN AN ARGON MATRIX

1962 ◽  
Vol 40 (1) ◽  
pp. 85-91 ◽  
Author(s):  
K. B. Harvey ◽  
J. F. Ogilvie
Keyword(s):  
Fine Structure ◽  
Infrared Absorption ◽  
Low Temperatures ◽  
Point Of View ◽  
Monomeric Form ◽  
Argon Matrix ◽  
Inert Matrix ◽  
Multiple Trapping ◽  
The Matrix ◽  
Trapping Sites

The infrared absorption of formaldehyde in both the polycrystalline and the monomeric form has been measured at 4 °K. In the latter case the molecules were suspended in an inert matrix of Ar or N2. The fine structure of the matrix spectra is discussed from the point of view of rotation of the monomers but this interpretation is ruled out in favor of one based on multiple trapping sites in the matrix.

Variable Temperature Measurement on Operating Pentacene-Based OTFT

2008 ◽  
Vol 1091 ◽  
Author(s):  
Hung-Keng Chen ◽  
Po-Tsun Liu ◽  
Ting-Chang Chang ◽  
S.-L. Shy
Keyword(s):  
Conduction Mechanism ◽  
Variable Temperature ◽  
Electrical Measurement ◽  
Isokinetic Temperature ◽  
Trap States ◽  
Band Tail ◽  
Thermally Activated ◽  
Multiple Trapping ◽  
Higher Temperature ◽  
Release Model

AbstractVariable temperature electrical measurement is well-established and used for determining the conduction mechanism in semiconductors. There is a Meyer¡VNeldel relationship between the activation energy and the prefactor with a Meyer¡VNeldel energy of 30.03 meV, which corresponds well with the isokinetic temperature of about 350 K. Therefore, the multiple trapping and release model is properly used to explain the thermally activated phenomenon. By the method, an exponential distribution of traps is assumed to be a better representation of trap states in band tail. Samples with higher temperature during measurement are observed to show better mobility, higher on-current and lower resistance, which agree well with the multiple trapping and release model proposed to explain the conduction mechanism in pentacene-based OTFTs.

Influence of the Distribution of Tail States in a-Si:H on the Field Dependence of Carrier Drift Mobilities

2004 ◽  
Vol 808 ◽  
Author(s):  
Monica Brinza ◽  
Evguenia V. Emelianova ◽  
André Stesmans ◽  
Guy J. Adriaenssens
Keyword(s):  
Field Dependence ◽  
Carrier Mobility ◽  
Transport Model ◽  
Chemical Vapor ◽  
Gaussian Component ◽  
Dispersive Transport ◽  
Exponential Distributions ◽  
Band Tail ◽  
Multiple Trapping ◽  
Gaussian Density

ABSTRACTExponential distributions of tail states have been able, within the framework of a multiple-trapping transport model, to account rather well for the time-of-flight photoconductivity transients that are measured with ‘standard’ a-Si:H, i.e. material prepared by plasma-enhanced chemical vapor deposition at ∼250°C. A field-dependent carrier mobility in the dispersive transport regime is part of the observations. However, samples prepared in an expanding thermal plasma, although still exhibiting the dispersive transients, fail to show this field dependence. The presence of a Gaussian component in the density of valence-band tail states can account for such behavior for the hole transients. Nanoscale ordered inclusions in the amorphous matrix are thought to be responsible for the Gaussian density of states contribution.

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