Multiple Trapping Sites for Hydrogen Atoms in Rare Gas Matrices

1960 ◽  
Vol 32 (4) ◽  
pp. 963-971 ◽  
Author(s):  
S. N. Foner ◽  
E. L. Cochran ◽  
V. A. Bowers ◽  
C. K. Jen
1959 ◽  
Vol 2 (2) ◽  
pp. 43-45 ◽  
Author(s):  
E. L. Cochran ◽  
V. A. Bowers ◽  
S. N. Foner ◽  
C. K. Jen

1965 ◽  
Vol 137 (2A) ◽  
pp. A340-A346 ◽  
Author(s):  
D. Jaecks ◽  
B. Van Zyl ◽  
R. Geballe
Keyword(s):  
Rare Gas ◽  

1991 ◽  
Vol 219 ◽  
Author(s):  
R. Shinar ◽  
X.-L. Wu ◽  
S. Mitra ◽  
J. Shinar

ABSTRACTSecondary ion mass spectrometry and IR studies of long-range hydrogen motion in undoped a-Si:H and a-Ge:H of varying H content and microstructure are reviewed and discussed. In particular, their relation to the multiple trapping (MT) model, the role of microvoids, the significance of the Meyer-Neldel relation (MNR), and the nature of H sites is addressed. It is suggested that while the MT mechanism may be significant in a-Si:H of low H content Cfj, it is largely marginal in films where CH ≥ 10 at.% H and in a-Ge:H. Mono Si-H bonds on microvoid surfaces are apparently deep H trapping sites up to ∼ 400°C, but H is desorbed from such sites in a-Ge:H above 180°C. The MNR between the diffusional activation energy and prefactor is observed among the various a-Si:H and a-Ge:H, but its significance is questionable, and may be due to the MT mechanism only in low H content a-Si:H. The nature of the distribution of H sites is also discussed.


2021 ◽  
Vol 1024 ◽  
pp. 135-144
Author(s):  
Takuya Kamimura ◽  
Hayato Yamashita ◽  
Koichi Sato ◽  
Tsunakazu Ohyama ◽  
Yoshinori Kimoto ◽  
...  

Herein, we compared thermal desorption analysis (TDA) curves obtained by conducting experiments and simulations. In addition, we discussed the validation of our simulations and trapping sites of hydrogen atoms. In as-received F82H, when the samples contained solute atoms, grain boundaries, dislocations, and precipitates, the experimental curve corresponded to the simulated curve. In positron annihilation lifetime (PAL) measurements, di-vacancies were detected in the electron-irradiated F82H. When we changed the growth and the concentration of vacancy-type defects during temperature increase using the rate theory, the simulation results agreed with experiment results. In creep-ruptured Fe, only dislocations were detected by the PAL measurements. However, the existence of a type of defect, which was related to grain boundaries, must be assumed to fit the simulation curve to the experimental one. In the next step, the diffusion of hydrogen atoms on grain boundaries should be added to simulation program.


Science ◽  
2017 ◽  
Vol 355 (6330) ◽  
pp. 1196-1199 ◽  
Author(s):  
Y.-S. Chen ◽  
D. Haley ◽  
S. S. A. Gerstl ◽  
A. J. London ◽  
F. Sweeney ◽  
...  

2004 ◽  
Vol 121 (17) ◽  
pp. 8466 ◽  
Author(s):  
B. Gervais ◽  
E. Giglio ◽  
E. Jacquet ◽  
A. Ipatov ◽  
P.-G. Reinhard ◽  
...  

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