Detection of reactions and changes in thin film morphology using stress measurements

1992 ◽  
Author(s):  
Donald S. Gardner
1992 ◽  
Vol 10 (4) ◽  
pp. 1426-1441 ◽  
Author(s):  
Donald S. Gardner ◽  
Hai P. Longworth ◽  
Paul A. Flinn

2014 ◽  
Vol 104 (23) ◽  
pp. 233306 ◽  
Author(s):  
Kenji Kotsuki ◽  
Hiroshige Tanaka ◽  
Seiji Obata ◽  
Sven Stauss ◽  
Kazuo Terashima ◽  
...  

2013 ◽  
Vol 13 (9) ◽  
pp. 1861-1864 ◽  
Author(s):  
Ryo Ishino ◽  
Kazuhiro Fukushima ◽  
Takashi Minemoto

2015 ◽  
Vol 48 (7) ◽  
pp. 2107-2117 ◽  
Author(s):  
Harikrishna Erothu ◽  
Joanna Kolomanska ◽  
Priscilla Johnston ◽  
Stefan Schumann ◽  
Dargie Deribew ◽  
...  

2003 ◽  
Vol 769 ◽  
Author(s):  
Seong Deok Ahn ◽  
Seung Youl Kang ◽  
Yong Eui Lee ◽  
Meyoung Ju Joung ◽  
Chul Am Kim ◽  
...  

AbstractWe have investigated the growth mechanism and thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). As the source temperature, flow rate of the carrier gas, substrate temperature and chamber pressure were varied, the growth rate, morphology and grain size of the films were differently obtained. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays were discussed


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