Hot-electron relaxation in quantum-well structures: Multisubband occupation

1987 ◽  
Vol 35 (14) ◽  
pp. 7725-7728 ◽  
Author(s):  
M. C. Marchetti ◽  
W. Cai
1996 ◽  
Vol 74 (S1) ◽  
pp. 252-255
Author(s):  
Zhi Zhong Xu ◽  
D. Morris

The role of electron–electron scattering in the dynamics of inter-subband relaxation in GaAs quantum wells is investigated theoretically. The scattering rate is calculated using the Fermi golden rule, as a function of the carrier densities. The dependence of the inter-subband relaxation time on the quantum-well width is also investigated. Calculations are performed for multiple quantum-well structures with well widths varying from 80 to 240 Å (1 Å = 10−10 m). The hot electron distribution and the subband occupation function are taken into account in these calculations. Results show that the electron–electron scattering rate increases linearly as a function of the carrier densities. A band-filling effect limits the efficiency of this mechanism under high carrier densities (> 1012 cm−2). For thick well (180 Å) structures, this relaxation channel is as efficient as the phonon relaxation channel.


1997 ◽  
Vol 103 (3) ◽  
pp. 151-154 ◽  
Author(s):  
I.I. Reshina ◽  
D.N. Mirlin ◽  
V.I. Perel ◽  
A.Yu. Dobin ◽  
A.G. Agranov ◽  
...  

1992 ◽  
Vol 46 (12) ◽  
pp. 7745-7754 ◽  
Author(s):  
Rita Gupta ◽  
N. Balkan ◽  
B. K. Ridley

1996 ◽  
pp. 397-400
Author(s):  
V. Aninkevičius ◽  
V. Bareikis ◽  
R. Katilius ◽  
P. M. Koenraad ◽  
P. S. Kop’ev ◽  
...  

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