Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities

2000 ◽  
Vol 88 (3) ◽  
pp. 1494-1497 ◽  
Author(s):  
Jan Schmidt ◽  
Mark Kerr ◽  
Pietro P. Altermatt
Keyword(s):  
Auger Recombination ◽  
Crystalline Silicon ◽  
High Injection

scholarly journals Improved quantitative description of Auger recombination in crystalline silicon

2012 ◽  
Vol 86 (16) ◽  
Author(s):  
Armin Richter ◽  
Stefan W. Glunz ◽  
Florian Werner ◽  
Jan Schmidt ◽  
Andres Cuevas
Keyword(s):  
Auger Recombination ◽  
Crystalline Silicon ◽  
Quantitative Description

On the Light Emission in GaN Based Heterostructures at High Injection

2009 ◽  
Vol 1202 ◽  
Author(s):  
Xianfeng Ni ◽  
Xing Li ◽  
Huiyong Liu ◽  
Natalia Izyumskaya ◽  
Vitaliy Avrutin ◽  
...  
Keyword(s):  
Auger Recombination ◽  
Light Emission ◽  
Transparent Conducting Oxide ◽  
Multiple Quantum Well ◽  
Junction Temperature ◽  
Multiple Quantum ◽  
Current Crowding ◽  
Electron Blocking Layer ◽  
High Injection ◽  
Recombination Current

AbstractFor light emitting diodes (LEDs) to be used for general lighting, high efficiencies would need to be retained at high injection levels to meet the intensity and efficiency requirements. In this regard, it is imperative to overcome the observed drop in LED efficiency at high injection levels beyond that would be expected from junction temperature. The suggested genesis of efficiency degradation includes electron overflow or spillover, also suggested to be aided by polarization induced electric field, Auger recombination, current crowding, and elevated junction temperature. Setting the junction temperature aside, the degree to which or even whether each of these mechanisms plays a role is still under debate. We have undertaken a series of experiments to isolate, whenever possible, the aforementioned processes in an effort to determine the causes of efficiency loss at high injection levels. By using 1μs pulsed electrical injection with 0.1% duty cycle, we were able to minimize the effect of the junction temperature. By changing the design of the multiple quantum well region as well as by employing or not employing electron blocking layers, we demonstrated the important role that electron overflow plays on efficiency. Furthermore, by also exploring the same on non polar surfaces and observing any lack of dispersion in terms of the effect of the electron blocking layer we can conclude that the polarization induced field does not seem to play a major role. LEDs on non polar surface with no notable efficiency degradation, up to current densities of about 2250 Acm-2 used for measurements, have been obtained which seems to imply that Auger recombination up to these injection levels is not of major importance, at least in the structures investigated. The effect of current crowding on efficiency droop was investigated by comparing semitransparent Ni/Au p-contacts and transparent conducting oxide contacts (Ga-doped ZnO). Because the latter showed notably reduced efficiency degradation at high injection levels, we can conclude that current crowding plays a role as well.

General parameterization of Auger recombination in crystalline silicon

2002 ◽  
Vol 91 (4) ◽  
pp. 2473-2480 ◽  
Author(s):  
Mark J. Kerr ◽  
Andres Cuevas
Keyword(s):  
Auger Recombination ◽  
Crystalline Silicon

Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon

1997 ◽  
Vol 82 (10) ◽  
pp. 4938-4944 ◽  
Author(s):  
Pietro P. Altermatt ◽  
Jan Schmidt ◽  
Gernot Heiser ◽  
Armin G. Aberle
Keyword(s):  
Auger Recombination ◽  
Crystalline Silicon

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films

2020 ◽  
Vol 65 (3) ◽  
pp. 236
Author(s):  
R. M. Rudenko ◽  
O. O. Voitsihovska ◽  
V. V. Voitovych ◽  
M. M. Kras’ko ◽  
A. G. Kolosyuk ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Nanocrystalline Silicon ◽  
Recrystallization Temperature ◽  
Nanocrystalline Phase ◽  
Silicon Phase ◽  
Silicon Nanocrystallites ◽  
Lower Temperature ◽  
Two Stages

The process of crystalline silicon phase formation in tin-doped amorphous silicon (a-SiSn) films has been studied. The inclusions of metallic tin are shown to play a key role in the crystallization of researched a-SiSn specimens with Sn contents of 1–10 at% at temperatures of 300–500 ∘C. The crystallization process can conditionally be divided into two stages. At the first stage, the formation of metallic tin inclusions occurs in the bulk of as-precipitated films owing to the diffusion of tin atoms in the amorphous silicon matrix. At the second stage, the formation of the nanocrystalline phase of silicon occurs as a result of the motion of silicon atoms from the amorphous phase to the crystalline one through the formed metallic tin inclusions. The presence of the latter ensures the formation of silicon crystallites at a much lower temperature than the solid-phase recrystallization temperature (about 750 ∘C). A possibility for a relation to exist between the sizes of growing silicon nanocrystallites and metallic tin inclusions favoring the formation of nanocrystallites has been analyzed.

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