Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon

1997 ◽  
Vol 82 (10) ◽  
pp. 4938-4944 ◽  
Author(s):  
Pietro P. Altermatt ◽  
Jan Schmidt ◽  
Gernot Heiser ◽  
Armin G. Aberle
Keyword(s):  
Auger Recombination ◽  
Crystalline Silicon

scholarly journals Improved quantitative description of Auger recombination in crystalline silicon

2012 ◽  
Vol 86 (16) ◽  
Author(s):  
Armin Richter ◽  
Stefan W. Glunz ◽  
Florian Werner ◽  
Jan Schmidt ◽  
Andres Cuevas
Keyword(s):  
Auger Recombination ◽  
Crystalline Silicon ◽  
Quantitative Description

General parameterization of Auger recombination in crystalline silicon

2002 ◽  
Vol 91 (4) ◽  
pp. 2473-2480 ◽  
Author(s):  
Mark J. Kerr ◽  
Andres Cuevas
Keyword(s):  
Auger Recombination ◽  
Crystalline Silicon

Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities

2000 ◽  
Vol 88 (3) ◽  
pp. 1494-1497 ◽  
Author(s):  
Jan Schmidt ◽  
Mark Kerr ◽  
Pietro P. Altermatt
Keyword(s):  
Auger Recombination ◽  
Crystalline Silicon ◽  
High Injection

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films

2020 ◽  
Vol 65 (3) ◽  
pp. 236
Author(s):  
R. M. Rudenko ◽  
O. O. Voitsihovska ◽  
V. V. Voitovych ◽  
M. M. Kras’ko ◽  
A. G. Kolosyuk ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Nanocrystalline Silicon ◽  
Recrystallization Temperature ◽  
Nanocrystalline Phase ◽  
Silicon Phase ◽  
Silicon Nanocrystallites ◽  
Lower Temperature ◽  
Two Stages

The process of crystalline silicon phase formation in tin-doped amorphous silicon (a-SiSn) films has been studied. The inclusions of metallic tin are shown to play a key role in the crystallization of researched a-SiSn specimens with Sn contents of 1–10 at% at temperatures of 300–500 ∘C. The crystallization process can conditionally be divided into two stages. At the first stage, the formation of metallic tin inclusions occurs in the bulk of as-precipitated films owing to the diffusion of tin atoms in the amorphous silicon matrix. At the second stage, the formation of the nanocrystalline phase of silicon occurs as a result of the motion of silicon atoms from the amorphous phase to the crystalline one through the formed metallic tin inclusions. The presence of the latter ensures the formation of silicon crystallites at a much lower temperature than the solid-phase recrystallization temperature (about 750 ∘C). A possibility for a relation to exist between the sizes of growing silicon nanocrystallites and metallic tin inclusions favoring the formation of nanocrystallites has been analyzed.

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