Ultrathin boron-doped microcrystalline silicon as a novel constant band gap buffer inserted at the p-a-SiC:H/i-a-Si:H interface of amorphous silicon solar cells

2000 ◽  
Vol 87 (12) ◽  
pp. 8778-8785 ◽  
Author(s):  
Chang Hyun Lee ◽  
Jin Wan Jeon ◽  
Koeng Su Lim
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon ◽  
Boron Doped

Improved Amorphous Silicon Solar Cells Using RPCVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Kyu Chang Park ◽  
Tae Gon Kim ◽  
Sung Ki Kim ◽  
Sung Chul Kim ◽  
Myung Hak Hwang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Narrow Band ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon ◽  
Preparation Conditions ◽  
Silicon Carbon ◽  
Silicon Silicon

We have studied the depositions of amorphous silicon, silicon carbon alloy, doped microcrystalline silicon in order to apply these films as the component materials for the p-i-n and double stacked solar cells. We have obtained low band gap a-Si:H by decreasing the deposition rate under the proper preparation conditions and highly conductive, thin microcrystalline Si and SiC layers. We have developed a stable a-Si/a-Si double stacked solar cell with a conversion efficiency of ∼ % using narrow band gap a-Si:H as a i-layer of bottom cell.The performance of this cell does not degrade until 100 hrs illumination under 350 mW/cm2.

Amorphous silicon solar cells with graded boron‐doped active layers

1983 ◽  
Vol 54 (11) ◽  
pp. 6705-6707 ◽  
Author(s):  
Porponth Sichanugrist ◽  
Masatoshi Kumada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi ◽  
Koichiro Komori
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Active Layers ◽  
Boron Doped

Stability of P-I-N Amorphous Silicon Solar Cells with Boron-Doped and Undoped I-Layers

1985 ◽  
Vol 49 ◽  
Author(s):  
Anthony Catalano ◽  
Rajeewa R. Arya ◽  
Ralph C. Kerns
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Boron Doping ◽  
Poor Quality ◽  
Silicon Solar Cells ◽  
Device Performance ◽  
Layer Material ◽  
Boron Doped ◽  
Conversion Efficiencies ◽  
Initial Conversion

AbstractBoron-doping the i-layer in p-i-n amorphous silicon solar cells improves the device performance when the density of impurities in the undoped i-layer material is high (< 1020 cm-3). While this technique can boost the initial device efficiencies for poor quality i-layer material, our devices degrade faster than devices made with undoped, low impurity i-layer material. We have measured the degradation of photovoltaic parameters as a function of continuous AM1 exposure time for devices with and without B-doped i-layers. For single junction p-i-n solar cells with comparable initial conversion efficiencies (< 7%, area < 1cm2) we find that our devices containing i-layers deposited from gas mixtures containing 2–3 ppm diborane degrade faster than devices containing undoped i-layers. Similar effects are observed when two-junction stacked cells with B-doped i-layers are compared to two-junction stacked cells with undoped i-layers.

Stable Solar Cells Prepared from Dichlorosilane

1998 ◽  
Vol 507 ◽  
Author(s):  
Y. Yamamoto ◽  
W. Futako ◽  
K. Fukutani ◽  
M. Hagino ◽  
T. Sugawara ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Buffer Layers ◽  
Silicon Solar Cells ◽  
Hydrogen Dilution ◽  
Cell Structures ◽  
Reactive Plasma ◽  
Plasma Species

ABSTRACTAmorphous silicon films and solar cell i-layers were prepared from dichlorosilane(DCS) by ECR- and VHF-CVD. The hydrogen content, the chlorine content and the band gap could be controlled by varying argon and hydrogen dilution. The interaction of energetic and reactive plasma species with substrates and other previously deposited layers was studied. DCS, ECR-CVD causes darkening of TCO substrates even when buffer layers and/or doped layers were previously deposited by RF-CVD. Therefore n-i-p solar cell structures were prepared on NiCr and subsequent p-i-n solar cells were prepared with VHF-CVD which did not causeTCO reduction or other reactions in previously deposited amorphous layers. Preliminary results indicate that the VHF-CVD solar cells are at least as stable as standard amorphous silicon solar cells.

Optimization of band gap, thickness and carrier concentrations for the development of efficient microcrystalline silicon solar cells: A theoretical approach

Solar Energy ◽  
2013 ◽  
Vol 97 ◽  
pp. 176-185 ◽  
Author(s):  
Mansi Sharma ◽  
Sushil Kumar ◽  
Neeraj Dwivedi ◽  
Sucheta Juneja ◽  
A.K. Gupta ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Theoretical Approach ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon

Design and Growth of Band-GAP Graded a-SiGe:H Solar Cells

1995 ◽  
Vol 377 ◽  
Author(s):  
K. Vasanth ◽  
A. Payne ◽  
B. Crone ◽  
S. Sherman ◽  
M. Jakubowski ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Triple Junction ◽  
Cell Parameter ◽  
Red Light ◽  
Experimental Results ◽  
Buffer Layers ◽  
Silicon Solar Cells ◽  
Device Design

ABSTRACTThe i-layers of the middle and bottom cells in stable triple-junction amorphous silicon solar cells are composed of a-SiGe:H alloys which are graded in composition to enhance performance. We compare modeling and experimental results for three i-layer band gap grading schemes to determine the optimal profile. We find a good correlation between model trends and measured device parameters for all grading schemes. This is encouraging for the use of the model in predictive device design. We find that the highest white and red light performance do not necessarily have the same cell parameter set. Modeling and experiment indicate that thin cells without band gap profile and with suitably designed p/i and n/i buffer layers, have the best red light performance.

Quantitative Analysis of Surface Morphology of Boron-Doped Zinc Oxide for Microcrystalline Silicon Solar Cells

2012 ◽  
Vol 51 ◽  
pp. 051101 ◽  
Author(s):  
Taweewat Krajangsang ◽  
Shuichi Hiza ◽  
Teruaki Hayashi ◽  
Ihsanul Afdi Yunaz ◽  
Aswin Hongsingthong ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Solar Cells ◽  
Quantitative Analysis ◽  
Surface Morphology ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon ◽  
Boron Doped
Sign in / Sign up

Export Citation Format

Share Document