Double tunnel junctions for magnetic random access memory devices

2000 ◽  
Vol 87 (9) ◽  
pp. 6064-6066 ◽  
Author(s):  
K. Inomata ◽  
Y. Saito ◽  
K. Nakajima ◽  
M. Sagoi
Keyword(s):  
Tunnel Junctions ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Magnetic Random Access Memory

Development and process control of magnetic tunnel junctions for magnetic random access memory devices

2003 ◽  
Vol 93 (10) ◽  
pp. 8373-8375 ◽  
Author(s):  
Witold Kula ◽  
Jerome Wolfman ◽  
Kamel Ounadjela ◽  
Eugene Chen ◽  
William Koutny
Keyword(s):  
Process Control ◽  
Tunnel Junctions ◽  
Random Access ◽  
Magnetic Tunnel Junctions ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Magnetic Random Access Memory

Precessional reversal in orthogonal spin transfer magnetic random access memory devices

2012 ◽  
Vol 101 (3) ◽  
pp. 032403 ◽  
Author(s):  
H. Liu ◽  
D. Bedau ◽  
D. Backes ◽  
J. A. Katine ◽  
A. D. Kent
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Spin Transfer ◽  
Memory Devices ◽  
Access Memory ◽  
Magnetic Random Access Memory

TETRAGONAL HEUSLER-LIKE Mn–Ga ALLOYS BASED PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS

SPIN ◽  
2014 ◽  
Vol 04 (04) ◽  
pp. 1440024 ◽  
Author(s):  
QINLI MA ◽  
ATSUSHI SUGIHARA ◽  
KAZUYA SUZUKI ◽  
XIANMIN ZHANG ◽  
TERUNOBU MIYAZAKI ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Random Access ◽  
Magnetic Tunnel Junctions ◽  
Perpendicular Magnetic Anisotropy ◽  
Random Access Memory ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Current Status ◽  
Access Memory ◽  
Magnetic Random Access Memory

Films of the Mn -based tetragonal Heusler-like alloys, such as Mn – Ga , exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn -based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.

First principles modeling of magnetic random access memory devices (invited)

1999 ◽  
Vol 85 (8) ◽  
pp. 5834-5839 ◽  
Author(s):  
W. H. Butler ◽  
X.-G. Zhang ◽  
T. C. Schulthess ◽  
D. M. C. Nicholson ◽  
A. B. Oparin ◽  
...  
Keyword(s):  
First Principles ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Magnetic Random Access Memory
Sign in / Sign up

Export Citation Format

Share Document