First principles modeling of magnetic random access memory devices (invited)

1999 ◽  
Vol 85 (8) ◽  
pp. 5834-5839 ◽  
Author(s):  
W. H. Butler ◽  
X.-G. Zhang ◽  
T. C. Schulthess ◽  
D. M. C. Nicholson ◽  
A. B. Oparin ◽  
...  
Keyword(s):  
First Principles ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Magnetic Random Access Memory

Precessional reversal in orthogonal spin transfer magnetic random access memory devices

2012 ◽  
Vol 101 (3) ◽  
pp. 032403 ◽  
Author(s):  
H. Liu ◽  
D. Bedau ◽  
D. Backes ◽  
J. A. Katine ◽  
A. D. Kent
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Spin Transfer ◽  
Memory Devices ◽  
Access Memory ◽  
Magnetic Random Access Memory

Development and process control of magnetic tunnel junctions for magnetic random access memory devices

2003 ◽  
Vol 93 (10) ◽  
pp. 8373-8375 ◽  
Author(s):  
Witold Kula ◽  
Jerome Wolfman ◽  
Kamel Ounadjela ◽  
Eugene Chen ◽  
William Koutny
Keyword(s):  
Process Control ◽  
Tunnel Junctions ◽  
Random Access ◽  
Magnetic Tunnel Junctions ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Magnetic Random Access Memory

Double tunnel junctions for magnetic random access memory devices

2000 ◽  
Vol 87 (9) ◽  
pp. 6064-6066 ◽  
Author(s):  
K. Inomata ◽  
Y. Saito ◽  
K. Nakajima ◽  
M. Sagoi
Keyword(s):  
Tunnel Junctions ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Magnetic Random Access Memory

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature
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