Optical quenching of the photoconductivity in n-type GaN

2000 ◽  
Vol 87 (7) ◽  
pp. 3404-3408 ◽  
Author(s):  
T. Y. Lin ◽  
H. C. Yang ◽  
Y. F. Chen
Keyword(s):  
Optical Quenching

Some peculiarities of thermostimulated conductivity and optical quenching of the photocurrent in crystals with the auger excitation of recombination centres

1978 ◽  
Vol 50 (2) ◽  
pp. 767-770 ◽  
Author(s):  
N. E. Korsunskaya ◽  
I. V. Markevich ◽  
T. V. Torchinskaya ◽  
M. K. Sheinkman
Keyword(s):  
Optical Quenching

Temperature Dependence of the Optical Quenching Behavior of ZnO Nanorods

2011 ◽  
Vol 58 (5) ◽  
pp. 1174-1177 ◽  
Author(s):  
S. Y. Lee ◽  
Y. H. Shin ◽  
Y. H. Park ◽  
Yongmin Kim
Keyword(s):  
Temperature Dependence ◽  
Zno Nanorods ◽  
Optical Quenching

Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN

2010 ◽  
Vol 27 (5) ◽  
pp. 057104 ◽  
Author(s):  
Hou Qi-Feng ◽  
Wang Xiao-Liang ◽  
Xiao Hong-Ling ◽  
Wang Cui-Mei ◽  
Yang Cui-Bai ◽  
...  
Keyword(s):  
Optical Quenching

Optical Quenching of Photoconductivity in GaN Photo-conductors

1996 ◽  
Vol 449 ◽  
Author(s):  
Z.C. Huang ◽  
D.B. Mott ◽  
P.K. Shu ◽  
R. Zhang ◽  
J.C. Chen ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hole Trap ◽  
Quenching Mechanism ◽  
Optical Quenching

ABSTRACTWe report the first observation of optical quenching of photoconductivity in GaN photoconductors at room temperature. Three prominent quenching bands were found at Ev+1.44, 1.58 and 2.20 eV, respectively. These levels are related to the three hole traps in GaN materials based on a hole trap model to interpret the quenching mechanism. The responsivity was reduced about 12% with an additional He-Ne laser shining on the detector.

Optical quenching of luminescence in β-SiC

1980 ◽  
Vol 57 (1) ◽  
pp. K45-K48 ◽  
Author(s):  
H. Kuwabara ◽  
S. Yamada ◽  
Y. Uchida
Keyword(s):  
Optical Quenching ◽  
Quenching Of Luminescence
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