Optical Quenching of Photoconductivity in GaN Photo-conductors

1996 ◽  
Vol 449 ◽  
Author(s):  
Z.C. Huang ◽  
D.B. Mott ◽  
P.K. Shu ◽  
R. Zhang ◽  
J.C. Chen ◽  
...  

ABSTRACTWe report the first observation of optical quenching of photoconductivity in GaN photoconductors at room temperature. Three prominent quenching bands were found at Ev+1.44, 1.58 and 2.20 eV, respectively. These levels are related to the three hole traps in GaN materials based on a hole trap model to interpret the quenching mechanism. The responsivity was reduced about 12% with an additional He-Ne laser shining on the detector.

1997 ◽  
Vol 482 ◽  
Author(s):  
Michèle T. Hirsch ◽  
O. Seiferta ◽  
O. Kirfel ◽  
J. Parisia ◽  
J. A. Wolk ◽  
...  

AbstractWe report on the observation of optical quenching of persistent photoconductivity (PPC) in unintentionally doped n-type GaN films. The PPC is induced by subbandgap illumination between room temperature and 77K. The corresponding decay, which.is thermally activated, is substantially increased upon low energy illumination, e.g. illumination by wavelengths between 1O50nm and 700nm. We measure the saturation conductivity under simultaneous illumination with excitation and quenching light and find that some wavelengths can induce both excitation and quenching of photoconductivity. Additionally, we present a preliminary investigation of the spectral dependence of the quenching effect. A simulation indicates only a weak spectral dependence of the quenching cross-sections in the wavelength range from 470nm–1050nm.


Author(s):  
L. F. Makarenko ◽  
S. B. Lastovskii ◽  
E. Gaubas ◽  
Je. A. Pavlov ◽  
M. Moll ◽  
...  

With the use of deep level transient spectroscopy (DLTS) the effect of injection of minority charge carriers (electrons) on an annealing rate of self di-interstitial – oxygen (I2O) complex in silicon has been studied. The complex has been formed by irradiation of epitaxial boron-doped n+–p diode structures with alpha-particles at room temperature. It has been shown that the disappearance of this complex at room temperature begins at a direct current density of ~1.5 A/cm2. This characteristic current density has been found for 10 W·cm p-type silicon when the total radiation defect density was less than 15 % of the initial boron concentration, a divalent hole trap with energy levels of Ev + 0.43 eV and Ev + 0.54 eV has been found to appear as a result of recombination-enhanced annealing of the I2O. When the I2O complex is annealed thermally, the concurrent appearance of an electron trap with an energy level of Ec – 0.35 eV has been observed. It has been shown that the divalent hole trap represents a metastable configuration (BH-configuration) of the bistable defect, whereas the electron trap is stab le in the p-Si configuration (ME-configuration). From the comparison of DLTS signals related to different defect configurations it is found that the ME-configuration of this bistable defect can be characterized as a center with negative correlation energy. It has been shown that the injection-stimulated processes make it very difficult to obtain reliable data on the formation kinetics of the bistable defect in the BH-configuration when studying the thermal annealing of the I2O complex.


2013 ◽  
Vol 788 ◽  
pp. 48-51 ◽  
Author(s):  
Shao Hua Tian ◽  
Xu Li ◽  
Bao Zhu Yang ◽  
Li Guan ◽  
Fei Su ◽  
...  

A new red phosphor Ca3SiO4Cl2:Sm3+ has been synthesized and its luminescent properties have been investigated. The X-ray powder diffraction (XRD) was measured for studying the host structure. The excitation and emission spectra were measured at room temperature. The effect of Sm3+ ion content on the luminescent intensity and concentration quenching mechanism were studied. The results suggest that this phosphor maybe a good candidate of red phosphor for near UV-based white LED.


Author(s):  
J. E. Doherty ◽  
A. F. Giamei ◽  
B. H. Kear ◽  
C. W. Steinke

Recently we have been investigating a class of nickel-base superalloys which possess substantial room temperature ductility. This improvement in ductility is directly related to improvements in grain boundary strength due to increased boundary cohesion through control of detrimental impurities and improved boundary shear strength by controlled grain boundary micros true tures.For these investigations an experimental nickel-base superalloy was doped with different levels of sulphur impurity. The micros tructure after a heat treatment of 1360°C for 2 hr, 1200°C for 16 hr consists of coherent precipitates of γ’ Ni3(Al,X) in a nickel solid solution matrix.


Author(s):  
J. N. Turner ◽  
D. N. Collins

A fire involving an electric service transformer and its cooling fluid, a mixture of PCBs and chlorinated benzenes, contaminated an office building with a fine soot. Chemical analysis showed PCDDs and PCDFs including the highly toxic tetra isomers. Guinea pigs were chosen as an experimental animal to test the soot's toxicity because of their sensitivity to these compounds, and the liver was examined because it is a target organ. The soot was suspended in 0.75% methyl cellulose and administered in a single dose by gavage at levels of 1,10,100, and 500mgm soot/kgm body weight. Each dose group was composed of 6 males and 6 females. Control groups included 12 (6 male, 6 female) animals fed activated carbon in methyl cellulose, 6 males fed methyl cellulose, and 16 males and 10 females untreated. The guinea pigs were sacrificed at 42 days by suffocation in CO2. Liver samples were immediately immersed and minced in 2% gluteraldehyde in cacadylate buffer at pH 7.4 and 4°C. After overnight fixation, samples were postfixed in 1% OsO4 in cacodylate for 1 hr at room temperature, embedded in epon, sectioned and stained with uranyl acetate and lead citrate.


Author(s):  
Joseph J. Comer

Domains visible by transmission electron microscopy, believed to be Dauphiné inversion twins, were found in some specimens of synthetic quartz heated to 680°C and cooled to room temperature. With the electron beam close to parallel to the [0001] direction the domain boundaries appeared as straight lines normal to <100> and <410> or <510> directions. In the selected area diffraction mode, a shift of the Kikuchi lines was observed when the electron beam was made to traverse the specimen across a boundary. This shift indicates a change in orientation which accounts for the visibility of the domain by diffraction contrast when the specimen is tilted. Upon exposure to a 100 KV electron beam with a flux of 5x 1018 electrons/cm2sec the boundaries are rapidly decorated by radiation damage centers appearing as black spots. Similar crystallographio boundaries were sometimes found in unannealed (0001) quartz damaged by electrons.


Author(s):  
Louis T. Germinario

A liquid nitrogen stage has been developed for the JEOL JEM-100B electron microscope equipped with a scanning attachment. The design is a modification of the standard JEM-100B SEM specimen holder with specimen cooling to any temperatures In the range ~ 55°K to room temperature. Since the specimen plane is maintained at the ‘high resolution’ focal position of the objective lens and ‘bumping’ and thermal drift la minimized by supercooling the liquid nitrogen, the high resolution capability of the microscope is maintained (Fig.4).


Author(s):  
K. A. Fisher ◽  
M. G. L. Gustafsson ◽  
M. B. Shattuck ◽  
J. Clarke

The atomic force microscope (AFM) is capable of imaging electrically conductive and non-conductive surfaces at atomic resolution. When used to image biological samples, however, lateral resolution is often limited to nanometer levels, due primarily to AFM tip/sample interactions. Several approaches to immobilize and stabilize soft or flexible molecules for AFM have been examined, notably, tethering coating, and freezing. Although each approach has its advantages and disadvantages, rapid freezing techniques have the special advantage of avoiding chemical perturbation, and minimizing physical disruption of the sample. Scanning with an AFM at cryogenic temperatures has the potential to image frozen biomolecules at high resolution. We have constructed a force microscope capable of operating immersed in liquid n-pentane and have tested its performance at room temperature with carbon and metal-coated samples, and at 143° K with uncoated ferritin and purple membrane (PM).


Author(s):  
A. C. Faberge

Benzylamine tartrate (m.p. 63°C) seems to be a better and more convenient substrate for making carbon films than any of those previously proposed. Using it in the manner described, it is easy consistently to make batches of specimen grids as open as 200 mesh with no broken squares, and without individual handling of the grids. Benzylamine tartrate (hereafter called B.T.) is a viscous liquid when molten, which sets to a glass. Unlike polymeric substrates it does not swell before dissolving; such swelling of the substrate seems to be a principal cause of breakage of carbon film. Mass spectroscopic examination indicates a vapor pressure less than 10−9 Torr at room temperature.


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