Hydrogen plasma passivation of GaAs on Si substrates for solar cell fabrication

2000 ◽  
Vol 87 (5) ◽  
pp. 2285-2288 ◽  
Author(s):  
T. Soga ◽  
T. Jimbo ◽  
G. Wang ◽  
K. Ohtsuka ◽  
M. Umeno
2002 ◽  
Author(s):  
Y.S. Tsuo ◽  
Y. Xu ◽  
R.S. Crandall ◽  
D. Han ◽  
C. Qiu ◽  
...  

1992 ◽  
Vol 12 (1-4) ◽  
pp. 187-195 ◽  
Author(s):  
A. N. TIWARI ◽  
H. ZOGG ◽  
S. BLUNIER ◽  
K. KESSLER ◽  
C. MAISSEN ◽  
...  

1989 ◽  
Vol 149 ◽  
Author(s):  
Y. S. Tsuo ◽  
Y. Xu ◽  
Richard S. Crandall ◽  
H. S. Ullal ◽  
K. Emery

ABSTRACTWe have studied the effects of a hydrogen-plasma reactive flush between the pand i-layer depositions in fabricating solar cells of glass/TCO/p(a-SiC:H)-i(a-Si:H)-n(a-Si:H)/metal in a single-chamber, glow-discharge deposition system. Spectral response, photoluminescence, and photovoltaic conversion efficiency measurements show that the hydrogen-plasma reactive flush is effective in reducing the p-i interface recombination of charge carriers and in improving solar cell performance.


2012 ◽  
Author(s):  
Sitaraman Krishnan ◽  
John McLaughlin ◽  
Dipankar Roy

2014 ◽  
Vol 4 (14) ◽  
pp. 1400421 ◽  
Author(s):  
Girolamo Mincuzzi ◽  
Luigi Vesce ◽  
Malte Schulz-Ruhtenberg ◽  
Elmar Gehlen ◽  
Andrea Reale ◽  
...  

2021 ◽  
pp. 100083
Author(s):  
Mathieu de Lafontaine ◽  
Erwine Pargon ◽  
Guillaume Gay ◽  
Camille Petit-Etienne ◽  
Sylvain David ◽  
...  

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