Polar optical-phonon scattering mobility in semiconductor quantum wells

1986 ◽  
Vol 33 (10) ◽  
pp. 7288-7290 ◽  
Author(s):  
D. Chattopadhyay
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Polar Optical Phonon ◽  
Semiconductor Quantum Wells ◽  
Optical Phonon Scattering

scholarly journals Crystallographic Orientation Effect On Hole Polar Optical Phonon Scattering Rates in Thin Gaas/Alxga1-Xas Quantum Wells

2019 ◽  
Author(s):  
Mohamed Boumaza
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Strain Effect ◽  
Polar Optical Phonon ◽  
Phonon Modes ◽  
Bulk Gaas ◽  
Hole Energy ◽  
Optical Phonon Scattering ◽  
Scattering Rates

We report on hole polar optical phonon scattering processes in thin GaAs/AlxGa1-xAs quantum wells grown in various crystallographic directions, such as [001], [110]. Using the dielectric continuum model we focus on how the different scattering processes of holes with interface phonon modes depend on the initial hole energy. In our work, we use the Luttinger-Kohn (LK) 6×6 k.p Hamiltonian with the envelope function approximation, from which we compute numerically the electronic structure of holes for a thin quantum well sustaining only one bound state for each type of hole. Due to mixing between the heavy, light, and split off bands, hole subbands exhibit strong nonparabolicity and important warping that have their word to say on physical properties. Detailed and extensive calculations that the rates for intra-subband scattering processes differ significantly from those of bulk GaAs because of quantization and reduced dimensionality. Moreover, the study of scattering as a function of hole energy shows that the trend of the scattering rates is governed mostly by i) overlap integrals and ii) the density of the final states to which the hole scatters. The influence of warping, in the hole energy dispersion, on the phonon scattering rates is also explored and found to be important when the initial hole energy is high. Our calculations show evidence of strong anisotropy in the scattering rates especially for processes involving the heavy hole subband, which anisotropy is in fact quite important and far from being negligible. However, strain effect can reduce scattering rates.

Reduction of inelastic longitudinal-optical phonon scattering in narrow polar-semiconductor quantum wells

1992 ◽  
Author(s):  
Michael A. Stroscio ◽  
Ki Wook Kim ◽  
Amit R. Bhatt ◽  
Gerald J. Iafrate ◽  
Mitra B. Dutta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Semiconductor Quantum Wells ◽  
Optical Phonon Scattering

ELECTRON-OPTICAL PHONON INTERACTIONS IN POLAR SEMICONDUCTOR QUANTUM WELLS

1993 ◽  
Vol 07 (25) ◽  
pp. 4165-4185 ◽  
Author(s):  
K.T. TSEN
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Experimental Results ◽  
Macroscopic Model ◽  
Time Resolved ◽  
Semiconductor Quantum Wells ◽  
Optical Phonon Scattering ◽  
Direct Measurements ◽  
Microscopic Models

Electron-optical phonon interactions in polar semiconductor quantum wells are reviewed. Three macroscopic and one microscopic models for electron-optical phonon interactions are compared with experimental results in GaAs-AlAs polar semiconductor quantum wells recently obtained by picosecond time-resolved Raman spectroscopy. The macroscopic model of Huang and Zhu as well as the microscopic model of Rucker et al. are found to be in good agreement with the experimental data. Direct measurements of electron-optical phonon scattering rates in GaAs-AlAs polar semiconductor quantum wells carried out by subpicosecond time-resolved Raman scattering technique are also presented. These experimental results are explained with the model of Huang and Zhu.

Polar Optical Phonon Instability and Intervalley Transfer in Gallium Nitride

1998 ◽  
Vol 512 ◽  
Author(s):  
B. E. Foutz ◽  
S. K. O'leary ◽  
M. S. Shur ◽  
L. F. Eastman ◽  
B. L. Gelmont ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Analytical Model ◽  
Optical Phonon ◽  
Room Temperature ◽  
Phonon Scattering ◽  
Polar Optical Phonon ◽  
Scattering Mechanism ◽  
Loss Mechanism ◽  
One Dimensional ◽  
Optical Phonon Scattering

ABSTRACTWe develop a simple, one-dimensional, analytical model, which describes electron transport in gallium nitride. We focus on the polar optical phonon scattering mechanism, as this is the dominant energy loss mechanism at room temperature. Equating the power gained from the field with that lost through scattering, we demonstrate that beyond a critical electric field, 114 kV/cm at T = 300 K, the power gained from the field exceeds that lost due to polar optical phonon scattering. This polar optical phonon instability leads to a dramatic increase in the electron energy, this being responsible for the onset of intervalley transitions. The predictions of our analytical model are compared with those of Monte Carlo simulations, and are found to be in satisfactory agreement.

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