Effects of precursors and substrate materials on microstructure, dielectric properties, and step coverage of (Ba, Sr)TiO3 films grown by metalorganic chemical vapor deposition

2000 ◽  
Vol 87 (1) ◽  
pp. 124-132 ◽  
Author(s):  
Y. Gao ◽  
S. He ◽  
P. Alluri ◽  
M. Engelhard ◽  
A. S. Lea ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Dielectric Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Step Coverage ◽  
Metalorganic Chemical

Dielectric properties of Pr2O3 high-k films grown by metalorganic chemical vapor deposition on silicon

2003 ◽  
Vol 83 (1) ◽  
pp. 129-131 ◽  
Author(s):  
Raffaella Lo Nigro ◽  
Vito Raineri ◽  
Corrado Bongiorno ◽  
Roberta Toro ◽  
Graziella Malandrino ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Dielectric Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
High K ◽  
Metalorganic Chemical

Ferroelectric Properties of a-Axis Textured BaTiO3 Thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
H. A. Lu ◽  
L. A. Wills ◽  
B. W. Wessels ◽  
X. Zhan ◽  
J. A. Helfrich ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Dielectric Properties ◽  
Electric Field ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Ferroelectric Hysteresis ◽  
Metalorganic Chemical

AbstractFerroelectric and dielectric properties were measured for BaTiO3 thin films prepared by metalorganic chemical vapor deposition which were highly a-axis textured. No ferroelectric hysteresis was observed from the as-deposited BaTiO3 films on Pt coated MgO. Upon applying an electric field exceeding a threshold electric field, Et, ∼ 50 - 100 kV/cm, a ferroelectric hysteresis was observed. A spontaneous polarization Ps ≥ 15 μC/cm2 was measured for the textured films.

Step Coverage and Composition of Pb(Zr, Ti)O3 Capacitors Prepared on Sub-Micron Three-Dimensional Trench Structure by Metalorganic Chemical Vapor Deposition

2004 ◽  
Vol 830 ◽  
Author(s):  
Atsushi Nagai ◽  
Gouji Asano ◽  
Jun Minamidate ◽  
Chel Jong Choi ◽  
Choong-Rae Cho ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Arrhenius Plot ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Step Coverage ◽  
Pzt Films ◽  
Trench Structure ◽  
Metalorganic Chemical

ABSTRACTPb(Zr, Ti)O3 (PZT) films were deposited into sub-micron trench structure consisting of SiO2/TiAlN/Ti/SiO2/Si to investigate their thickness and composition conformality by pulsed-metalorganic chemical vapor deposition (MOCVD) using liquid delivery source-supply system. Bis(dipivaloylmethanato)lead [Pb(DPM)2], tetrakis(1-methoxy-2-methyl-2-propoxy)zirconium [Zr(MMP)4] and tetrakis(1-methoxy-2-methyl-2-propoxy)titanium [Ti(MMP)4] were used as Pb, Zr and Ti source materials, respectively. In Arrhenius plot, the slopes of the straight lines for the constituents Pb, Zr and Ti in PZT film were almost the same at a lower deposition temperature (Td) region as well as a higher Td one. This means the composition change in the film against the Td can be suppressed by using Pb(DPM)2-Zr(MMP)4-Ti(MMP)4-O2 source system. From the results of Arrhenius plot, the Tds were fixed on 450 and 540°C as lower and higher temperatures, respectively. At both Tds, the sidewall-bottom step coverage (SCs-b) was approximately 70 %, while the sidewall step coverage (SCsw) reached excellent values above 90 %. It is suggested that low SCs-b value was caused by crystallization of the PZT films at the bottom of the trench because underlayer of the film at this area was not SiO2 but crystalline TiAlN. On the other hand, no significant composition fluctuation was observed along the depth direction of the sidewall. These results mean that the film deposited at 540°C had almost the same level in terms of thickness and composition conformality as that deposited at 450°C.

Sign in / Sign up

Export Citation Format

Share Document