Real-time study of oxygen in c-axis oriented YBa2Cu3O7−δ thin films using in situ spectroscopic ellipsometry

1999 ◽  
Vol 86 (12) ◽  
pp. 6979-6984 ◽  
Author(s):  
Y. Gao ◽  
A. H. Mueller ◽  
E. A. Irene ◽  
O. Auciello ◽  
A. R. Krauss ◽  
...  
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Time Study

Real time characterization of hydrogenation mechanism of palladium thin films by in situ spectroscopic ellipsometry

2009 ◽  
Vol 106 (1) ◽  
pp. 013523 ◽  
Author(s):  
Y. Yamada ◽  
K. Tajima ◽  
S. Bao ◽  
M. Okada ◽  
A. Roos ◽  
...  
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Spectroscopic Ellipsometry

Real-time study of phase transformations in Cu–In chalcogenide thin films using in situ Raman spectroscopy and XRD

2005 ◽  
Vol 66 (11) ◽  
pp. 1954-1960 ◽  
Author(s):  
E. Rudigier ◽  
J. Djordjevic ◽  
C. von Klopmann ◽  
B. Barcones ◽  
A. Pérez-Rodríguez ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Phase Transformations ◽  
Real Time ◽  
Time Study ◽  
In Situ Raman Spectroscopy ◽  
In Situ Raman ◽  
Chalcogenide Thin Films

scholarly journals An in situ and real time study of the formation of CdSe NCs

Nanoscale ◽  
2020 ◽  
Vol 12 (45) ◽  
pp. 22928-22934
Author(s):  
Cristina Palencia ◽  
Robert Seher ◽  
Jan Krohn ◽  
Felix Thiel ◽  
Felix Lehmkühler ◽  
...  
Keyword(s):  
Real Time ◽  
Time Study

In situ studies are crucial to demonstrate that magic-size clusters are always intermediates in the formation of regular NCs.

scholarly journals The role of interparticle heterogeneities in the selenization pathway of Cu–Zn–Sn–S nanoparticle thin films: a real-time study

2015 ◽  
Vol 3 (27) ◽  
pp. 7128-7134 ◽  
Author(s):  
Nathaniel J. Carter ◽  
Roland Mainz ◽  
Bryce C. Walker ◽  
Charles J. Hages ◽  
Justus Just ◽  
...  
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Time Study

Small (∼5 nm), Cu- and Sn-rich nanoparticles play a key role in initiating the growth of micrometer-sized Cu2ZnSn(S,Se)4 grains.

Kinetics of Ion-Exchange Reactions in Hybrid Organic–Inorganic Perovskite Thin Films Studied by In Situ Real-Time X-ray Scattering

2018 ◽  
Vol 9 (23) ◽  
pp. 6750-6754 ◽  
Author(s):  
Alessandro Greco ◽  
Alexander Hinderhofer ◽  
M. Ibrahim Dar ◽  
Neha Arora ◽  
Jan Hagenlocher ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Exchange ◽  
Real Time ◽  
Exchange Reactions ◽  
Inorganic Perovskite ◽  
X Ray ◽  
X Ray Scattering ◽  
Kinetics Of ◽  
Kinetics Of Ion Exchange

In Situ Study of Barrier Layers Using Spectroscopic Ellipsometry and Mass Spectroscopy of Recoiled Ions

2000 ◽  
Vol 619 ◽  
Author(s):  
Y. Gao ◽  
A.H. Mueller ◽  
E.A. Irene ◽  
O. Auciello ◽  
A.R. Krauss ◽  
...  
Keyword(s):  
Real Time ◽  
Mass Spectroscopy ◽  
Spectroscopic Ellipsometry ◽  
Nitrogen Concentration ◽  
Random Access ◽  
Copper Interconnects ◽  
Access Memory ◽  
Barrier Layers ◽  
The Stability

ABSTRACTAn in situ study of barrier layers using spectroscopic ellipsometry (SE) and Time-of-Flight (ToF) mass spectroscopy of recoiled ions (MSRI) is presented. First the formation of copper silicides has been observed by real-time SE and in situ MSRI in annealed Cu/Si samples. Second TaSiN films as barrier layers for copper interconnects were investigated. Failure of the TaSiN layers in Cu/TaSiN/Si samples was detected by real-time SE during annealing and confirmed by in situ MSRI. The effect of nitrogen concentration on TaSiN film performance as a barrier was also examined. The stability of both TiN and TaSiN films as barriers for electrodes for dynamic random access memory (DRAM) devices has been studied. It is shown that a combination of in situ SE and MSRI can be used to monitor the evolution of barrier layers and detect the failure of barriers in real-time.

In-Situ Tem Study of Copper-Tin Intermetallic Formation

1993 ◽  
Vol 323 ◽  
Author(s):  
Yujing Wu ◽  
Elizabeth G. Jacobs ◽  
Cyrus Pouraghabagher ◽  
Russell F. Pinizzotto
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Diffusion Barrier ◽  
Solder Joints ◽  
Effective Diffusion ◽  
Copper Substrate ◽  
In Situ Tem ◽  
Intermetallic Formation ◽  
Intermetallic Growth

AbstractThe formation and growth of Cu6Sn5 and Cu3Sn at the interface of Sn-Pb solder/copper substrate are factors which affect the solderability and reliability of electronic solder joints. The addition of particles such as Ni to eutectic Sn-Pb solder drastically affects the activation energies of formation for both intermetallics. This study was performed to understand the mechanisms of intermetallic formation and the effects of Ni on intermetallic growth. Cu/Sn and Cu/Sn/Ni thin films were deposited by evaporation and observed in the TEM in real time using a hot stage. The diffusion of Sn through Cu6Sn5 and Cu3Sn followed by reaction with Cu must occur for intermetallic formation and growth to take place. Ni is an effective diffusion barrier which prevents Sn from diffusing into Cu.

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