Steady-state and time-resolved photoconductivity measurements of minority carrier lifetime in ZnTe

1999 ◽  
Vol 86 (11) ◽  
pp. 6599-6601 ◽  
Author(s):  
D. N. Bose ◽  
R. K. Ahrenkiel ◽  
S. Bhunia
Keyword(s):  
Steady State ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Time Resolved

Minority carrier lifetime in silicon wafers from quasi-steady-state photoluminescence

2010 ◽  
Vol 97 (9) ◽  
pp. 092109 ◽  
Author(s):  
J. A. Giesecke ◽  
M. C. Schubert ◽  
D. Walter ◽  
W. Warta
Keyword(s):  
Steady State ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Silicon Wafers ◽  
Quasi Steady State

scholarly journals Injection-dependent Minority Carrier Lifetime in Epitaxial Silicon Layers by Time-resolved Photoluminescence

2015 ◽  
Vol 77 ◽  
pp. 139-148 ◽  
Author(s):  
Stéphanie Parola ◽  
Mehdi Daanoune ◽  
Anne Kaminski-Cachopo ◽  
Guillaume Chareyre ◽  
Mustapha Lemiti ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Epitaxial Silicon ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 373-376
Author(s):  
Ricardo Reitano ◽  
M. Zimbone ◽  
Paolo Musumeci ◽  
P. Baeri
Keyword(s):  
Room Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Ion Irradiation ◽  
Minority Carrier Lifetime ◽  
Time Resolved ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Photoluminescence Peak

Photoluminescence (PL) and time resolved PL are well established as important experimental techniques to study electronic properties of SiC. We studied the influence of ionimplantation on the photoluminescence peak at 423nm and the variation of the minority carrier lifetime (MCL).

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