Organic semiconductor interfaces: Discrimination between charging and band bending related shifts in frontier orbital line-up measurements with photoemission spectroscopy

1999 ◽  
Vol 86 (10) ◽  
pp. 5678-5686 ◽  
Author(s):  
R. Schlaf ◽  
C. D. Merritt ◽  
L. A. Crisafulli ◽  
Z. H. Kafafi
Keyword(s):  
Organic Semiconductor ◽  
Photoemission Spectroscopy ◽  
Frontier Orbital ◽  
Band Bending ◽  
Semiconductor Interfaces

Determination of frontier orbital alignment and band bending at an organic semiconductor heterointerface by combined x-ray and ultraviolet photoemission measurements

1998 ◽  
Vol 73 (8) ◽  
pp. 1026-1028 ◽  
Author(s):  
R. Schlaf ◽  
B. A. Parkinson ◽  
P. A. Lee ◽  
K. W. Nebesny ◽  
N. R. Armstrong
Keyword(s):  
Organic Semiconductor ◽  
Frontier Orbital ◽  
Band Bending ◽  
X Ray

New Electronic Properties of Metal / III-V Compound Semiconductor Interfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
L. J. Brillson ◽  
R. E. Viturro ◽  
S. Chang ◽  
J. L. Shaw ◽  
C. Mailhiot ◽  
...  
Keyword(s):  
Compound Semiconductor ◽  
Photoemission Spectroscopy ◽  
Dominant Effect ◽  
Band Bending ◽  
X Ray ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Cathodoluminescence Spectroscopy ◽  
Wide Range ◽  
Spectroscopy Studies

ABSTRACTRecent studies of interface states and band bending at metal / III-V compound semiconductor interfaces reveal that these junctions are much more controllable and predictable than commonly believed. Soft x-ray photoemission spectroscopy studies demonstrate a wide range of band bending for metals on many III-V compounds, including GaAs. Cathodoluminescence spectroscopy measurements show that discrete states form at the microscopic junction which can have a dominant effect on the band bending properties. Internal photoemission measurements confirm the bulk barrier heights inferred by photoemission methods. After separating out surface chemical and bulk crystal quality effects, one finds simple, predictive barrier height variations which follow classical Schottky behavior.

Process-Dependent Electronic Structure at Metallized GaAs Contacts

1992 ◽  
Vol 260 ◽  
Author(s):  
L. J. Brillson ◽  
I. M. Vitomirov ◽  
A. Raisanen ◽  
S. Chang ◽  
R. E. Viturro ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Chemical Interaction ◽  
Deep Level ◽  
Multiple Roles ◽  
Atomic Scale ◽  
Photoemission Spectroscopy ◽  
Band Bending ◽  
Barrier Heights ◽  
Barrier Formation ◽  
Thermally Driven

ABSTRACTThe influence of metallization and processing on Schottky barrier formation provides the basis for one of several fruitful approaches for controlling junction electronic properties. Interface cathodo-and photoluminescence measurements reveal that electrically-active deep levels form on GaAs(100) surfaces and metal interfaces which depend on thermally-driven surface stoichiometry and reconstruction, chemical interaction, as well as surface misorientation and bulk crystal quality. These interface states are discrete and occur at multiple gap energies which can account for observed band bending. Characteristic trends in such deep level emission with interface processing provide guides for optimizing interface electronic behavior. Correspondingly, photoemission and internal photoemission spectroscopy measurements indicate self-consistent changes in barrier heights which may be heterogeneous and attributable to interface chemical reactions observed on a monolayer scale. These results highlight the multiple roles of atomic-scale structure in forming macroscopic electronic properties of compound semiconductor-metal junctions.

Interfacial electronic structures at Fe/pentacene/Fe interfaces

2011 ◽  
Vol 1 (SRMS-7) ◽  
Author(s):  
Yu-Zhan Wang ◽  
Xing-Yu Gao ◽  
Andrew Wee ◽  
Dong-Chen Qi ◽  
Shi Chen
Keyword(s):  
Thin Film ◽  
Binding Energy ◽  
Chemical Reaction ◽  
Electronic Structures ◽  
Hole Injection ◽  
Photoemission Spectroscopy ◽  
Core Hole ◽  
Band Bending ◽  
Screening Effect ◽  
Injection Barrier

We investigate the interfacial electronic structures of the heterojunction Fe/pentacene/Fe on Cu(100) substrate, using synchrotron-based photoemission spectroscopy. No chemical reaction is observed at either Fe/pentacene or pentacene/Fe interface. The hole injection barrier was estimated to be about 0.95 eV between pentacene and under the Fe thin film. C K-edge NEXAFS revealed that the long axis of pentacene molecule was almost perpendicular to the surface plane. With increasing Fe thickness deposited on pentacene film, the pentacene's HOMO shifts to higher binding energy whereas the C 1s binding energy showed an interesting unusual behaviour due to the initial band bending gradually suppressed by the increasing core-hole screening effect.

Fingerprint of Charge Redistribution in the Optical Spectra of Hybrid Inorganic/Organic Semiconductor Interfaces

2018 ◽  
Vol 122 (24) ◽  
pp. 12913-12919 ◽  
Author(s):  
Tino Meisel ◽  
Mino Sparenberg ◽  
Marcel Gawek ◽  
Sergey Sadofev ◽  
Björn Kobin ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Optical Spectra ◽  
Charge Redistribution ◽  
Semiconductor Interfaces
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