scholarly journals Coefficient of thermal expansion and elastic modulus of thin films

1999 ◽  
Vol 86 (9) ◽  
pp. 4936-4942 ◽  
Author(s):  
M. M. de Lima ◽  
R. G. Lacerda ◽  
J. Vilcarromero ◽  
F. C. Marques
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Elastic Modulus ◽  
Coefficient Of Thermal Expansion

scholarly journals Elastic modulus and coefficient of thermal expansion of piezoelectric Al1−xScxN (up to x = 0.41) thin films

APL Materials ◽  
2018 ◽  
Vol 6 (7) ◽  
pp. 076105 ◽  
Author(s):  
Yuan Lu ◽  
Markus Reusch ◽  
Nicolas Kurz ◽  
Anli Ding ◽  
Tim Christoph ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Elastic Modulus ◽  
Coefficient Of Thermal Expansion

A Technique for Deducing In-Plane Modulus and Coefficient of Thermal Expansion of a Supported Thin Film

2002 ◽  
Vol 124 (2) ◽  
pp. 274-277 ◽  
Author(s):  
Martin Y. M. Chiang ◽  
Chwan K. Chiang ◽  
Wen-li Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Thermal Expansion ◽  
Thermal Stress ◽  
Elastic Modulus ◽  
Coefficient Of Thermal Expansion ◽  
Thermal And Mechanical Properties ◽  
Reduction Scheme ◽  
Coupled Equations

A technique for determining the in-plane modulus and the coefficient of thermal expansion (CTE) of supported thin films has been developed. The modulus and CTE are calculated by solving two coupled equations that relate the curvature of film samples deposited on two different substrates to the thermal and mechanical properties of the constituents. In contrast with the conventional method used to calculate modulus and CTE, which involves differentiation of the thermal stress in the film, this new technique does not require the differentiation of the thermal stress, and can also provide the temperature-dependence of the in-plane CTE and elastic modulus of supported thin films. The data reduction scheme used for deducing CTE and elastic modulus is direct and reliable.

Extraction of the Coefficient of Thermal Expansion of Thin Films from Buckled Membranes

1998 ◽  
Vol 546 ◽  
Author(s):  
V. Ziebartl ◽  
O. Paul ◽  
H. Baltes
Keyword(s):  
Thin Films ◽  
Finite Element ◽  
Thermal Expansion ◽  
Silicon Nitride ◽  
Excellent Agreement ◽  
Energy Minimization ◽  
Coefficient Of Thermal Expansion ◽  
Temperature Dependent ◽  
Minimization Method ◽  
Energy Minimization Method

AbstractWe report a new method to measure the temperature-dependent coefficient of thermal expansion α(T) of thin films. The method exploits the temperature dependent buckling of clamped square plates. This buckling was investigated numerically using an energy minimization method and finite element simulations. Both approaches show excellent agreement even far away from simple critical buckling. The numerical results were used to extract Cα(T) = α0+α1(T−T0 ) of PECVD silicon nitride between 20° and 140°C with α0 = (1.803±0.006)×10−6°C−1, α1 = (7.5±0.5)×10−9 °C−2, and T0 = 25°C.

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

scholarly journals Improving Mechanical, Thermal and Damping Properties of NiTi (Nitinol) Reinforced Aluminum Nanocomposites

2020 ◽  
Vol 4 (1) ◽  
pp. 19 ◽  
Author(s):  
Penchal Reddy Matli ◽  
Vyasaraj Manakari ◽  
Gururaj Parande ◽  
Manohar Reddy Mattli ◽  
Rana Abdul Shakoor ◽  
...  
Keyword(s):  
Tensile Strength ◽  
Thermal Expansion ◽  
Elastic Modulus ◽  
Yield Strength ◽  
Coefficient Of Thermal Expansion ◽  
Microwave Sintering ◽  
Hot Extrusion ◽  
Damping Capacity ◽  
Damping Properties ◽  
Niti Particle

In the present study, Ni50Ti50 (NiTi) particle reinforced aluminum nanocomposites were fabricated using microwave sintering and subsequently hot extrusion. The effect of NiTi (0, 0.5, 1.0, and 1.5 vol %) content on the microstructural, mechanical, thermal, and damping properties of the extruded Al-NiTi nanocomposites was studied. Compared to the unreinforced aluminum, hardness, ultimate compression/tensile strength and yield strength increased by 105%, 46%, 45%, and 41% while elongation and coefficient of thermal expansion (CTE) decreased by 49% and 22%, respectively. The fabricated Al-1.5 NiTi nanocomposite exhibited significantly higher damping capacity (3.23 × 10−4) and elastic modulus (78.48 ± 0.008 GPa) when compared to pure Al.

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