scholarly journals Room-temperature vacancy migration in crystalline Si from an ion-implanted surface layer

1999 ◽  
Vol 86 (9) ◽  
pp. 4861-4864 ◽  
Author(s):  
Arne Nylandsted Larsen ◽  
Carsten Christensen ◽  
Jon Wulff Petersen
Keyword(s):  
Surface Layer ◽  
Room Temperature ◽  
Vacancy Migration ◽  
Ion Implanted

scholarly journals Room-temperature oxygen vacancy migration induced reversible phase transformation during the anelastic deformation in CuO

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Lei Li ◽  
Guoxujia Chen ◽  
He Zheng ◽  
Weiwei Meng ◽  
Shuangfeng Jia ◽  
...  
Keyword(s):  
High Temperature ◽  
Oxygen Vacancy ◽  
Room Temperature ◽  
High Temperature Superconductivity ◽  
Experimental Investigations ◽  
Solid State Chemistry ◽  
Vacancy Migration ◽  
Scientific Disciplines ◽  
Anelastic Deformation ◽  
Reversible Phase

AbstractFrom the mechanical perspectives, the influence of point defects is generally considered at high temperature, especially when the creep deformation dominates. Here, we show the stress-induced reversible oxygen vacancy migration in CuO nanowires at room temperature, causing the unanticipated anelastic deformation. The anelastic strain is associated with the nucleation of oxygen-deficient CuOx phase, which gradually transforms back to CuO after stress releasing, leading to the gradual recovery of the nanowire shape. Detailed analysis reveals an oxygen deficient metastable CuOx phase that has been overlooked in the literatures. Both theoretical and experimental investigations faithfully predict the oxygen vacancy diffusion pathways in CuO. Our finding facilitates a better understanding of the complicated mechanical behaviors in materials, which could also be relevant across multiple scientific disciplines, such as high-temperature superconductivity and solid-state chemistry in Cu-O compounds, etc.

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon

2006 ◽  
pp. 355-358 ◽  
Author(s):  
D J Stowe ◽  
K J Fraser ◽  
S A Galloway ◽  
S Senkader ◽  
R J Falster ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Ion Implanted

Probing origin of room temperature ferromagnetism in Ni ion implanted ZnO films with x-ray absorption spectroscopy

2012 ◽  
Vol 111 (1) ◽  
pp. 013715 ◽  
Author(s):  
P. Srivastava ◽  
S. Ghosh ◽  
B. Joshi ◽  
P. Satyarthi ◽  
P. Kumar ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Films ◽  
X Ray ◽  
X Ray Absorption ◽  
Ion Implanted

Boron lattice location in room temperature ion implanted Si crystal

2005 ◽  
Vol 124-125 ◽  
pp. 249-252 ◽  
Author(s):  
A.M. Piro ◽  
L. Romano ◽  
S. Mirabella ◽  
M.G. Grimaldi
Keyword(s):  
Room Temperature ◽  
Lattice Location ◽  
Ion Implanted

314 Mechanical Property Evaluation on Ion-Implanted Surface Layer

2000 ◽  
Vol 2000 (0) ◽  
pp. 85-86
Author(s):  
Takashi WAKUI ◽  
Masatoshi FUTAKAWA ◽  
Ikuo IOKA ◽  
Yuji TANABE
Keyword(s):  
Mechanical Property ◽  
Surface Layer ◽  
Property Evaluation ◽  
Ion Implanted
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