Two-step room temperature grain growth in electroplated copper

1999 ◽  
Vol 86 (7) ◽  
pp. 3642-3645 ◽  
Author(s):  
S. H. Brongersma ◽  
E. Richard ◽  
I. Vervoort ◽  
H. Bender ◽  
W. Vandervorst ◽  
...  
Keyword(s):  
Grain Growth ◽  
Room Temperature ◽  
Electroplated Copper

Room temperature grain growth in electroplated copper thin films

2000 ◽  
Vol 40 (8-10) ◽  
pp. 1301-1304 ◽  
Author(s):  
H. Wendrock ◽  
W. Brückner ◽  
M. Hecker ◽  
T.G. Koetter ◽  
H. Schloerb
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Room Temperature ◽  
Electroplated Copper

scholarly journals In Situ Grain Growth of Nanograined Magnetite under Ion Irradiation at Room Temperature and 500 ℃

2021 ◽  
Vol 27 (S1) ◽  
pp. 2640-2643
Author(s):  
Chris McRobie ◽  
Ryan Schoell ◽  
Tiffany Kaspar ◽  
Daniel Schreiber ◽  
Djamel Kaoumi
Keyword(s):  
Grain Growth ◽  
Room Temperature ◽  
Ion Irradiation

scholarly journals Radiation Tolerance in Nano-Structured Crystalline Fe(Cr)/Amorphous SiOC Composite

Crystals ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 147
Author(s):  
Qing Su ◽  
Tianyao Wang ◽  
Lin Shao ◽  
Michael Nastasi
Keyword(s):  
Amorphous Silicon ◽  
Grain Growth ◽  
Irradiation Dose ◽  
Room Temperature ◽  
Silicon Oxycarbide ◽  
Radiation Response ◽  
Radiation Tolerance ◽  
Width Direction ◽  
Cr Film ◽  
Radiation Tolerant

The management of irradiation defects is one of key challenges for structural materials in current and future reactor systems. To develop radiation tolerant alloys for service in extreme irradiation environments, the Fe self-ion radiation response of nanocomposites composed of amorphous silicon oxycarbide (SiOC) and crystalline Fe(Cr) were examined at 10, 20, and 50 displacements per atom damage levels. Grain growth in width direction was observed to increase with increasing irradiation dose in both Fe(Cr) films and Fe(Cr) layers in the nanocomposite after irradiation at room temperature. However, compared to the Fe(Cr) film, the Fe(Cr) layers in the nanocomposite exhibited ~50% less grain growth at the same damage levels, suggesting that interfaces in the nanocomposite were defect sinks. Moreover, the addition of Cr to α-Fe was shown to suppress its grain growth under irradiation for both the composite and non-composite case, consistent with earlier molecular dynamic (MD) modeling studies.

Characterization of the order-annealing response of nanostructured iron-palladium based ferromagnetic thin-films

2001 ◽  
Vol 703 ◽  
Author(s):  
Huiping Xu ◽  
Adam T. Wise ◽  
Timothy J. Klemmer ◽  
Jörg M. K. Wiezorek
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Room Temperature ◽  
Si Substrate ◽  
Ferromagnetic Thin Films ◽  
Precipitation Reactions ◽  
Post Deposition ◽  
Xrd And Tem ◽  
Iron Palladium

ABSTRACTA combination of XRD and TEM techniques have been used to characterize the response of room temperature magnetron sputtered Fe-Pd thin films on Si-susbtrates to post-deposition order-annealing at temperatures between 400-500°C. Deposition produced the disordered Fe-Pd phase with (111)-twinned grains approximately 18nm in size. Ordering occurred for annealing at 450°C and 500°C after 1.8ks, accompanied by grain growth (40-70nm). The ordered FePd grains contained (111)-twins rather than {101}-twins typical of bulk ordered FePd. The metallic overlayers and underlayers selected here produced detrimental dissolution (Pt into Fe-Pd phases) and precipitation reactions between Pd and the Si substrate.

Enhanced Grain Growth of Electroplated Copper on Cobalt-Containing Seed Layer

2013 ◽  
Vol 160 (12) ◽  
pp. D3045-D3050 ◽  
Author(s):  
Q. Huang ◽  
B. C. Baker-O'Neal ◽  
C. Cabral ◽  
E. Simonyi ◽  
V. R. Deline ◽  
...  
Keyword(s):  
Grain Growth ◽  
Seed Layer ◽  
Electroplated Copper

Microstructure Evolution of a Fine Grain Al-50wt%Si Alloy Fabricated by High Energy Milling

2011 ◽  
Vol 479 ◽  
pp. 54-61 ◽  
Author(s):  
Fei Wang ◽  
Ya Ping Wang
Keyword(s):  
Grain Growth ◽  
Microstructure Evolution ◽  
Room Temperature ◽  
Milling Time ◽  
High Energy ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Laser Method ◽  
X Ray ◽  
Fine Grain

Microstructure evolution of high energy milled Al-50wt%Si alloy during heat treatment at different temperature was studied. Scanning electron microscope (SEM) and X-ray diffraction (XRD) results show that the size of the alloy powders decreased with increasing milling time. The observable coarsening of Si particles was not seen below 730°C in the high energy milled alloy, whereas, for the alloy prepared by mixed Al and Si powders, the grain growth occurred at 660°C. The activation energy for the grain growth of Si particles in the high energy milled alloy was determined as about 244 kJ/mol by the differential scanning calorimetry (DSC) data analysis. The size of Si particles in the hot pressed Al-50wt%Si alloy prepared by high energy milled powders was 5-30 m at 700°C, which was significantly reduced compared to that of the original Si powders. Thermal diffusivity of the hot pressed Al-50wt%Si alloy was 55 mm2/s at room temperature which was obtained by laser method.

scholarly journals In Situ Hvem Study of Ion Irradiation-Induced Grain Growth in Au Thin Films

1988 ◽  
Vol 128 ◽  
Author(s):  
Joyce C. Liu ◽  
Jian Li ◽  
J. W. Mayer ◽  
Charles W. Allen ◽  
Lynn E. Rehn
Keyword(s):  
Grain Growth ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Average Grain Size ◽  
In Situ Observations ◽  
Au Thin Films ◽  
Grain Coalescence

ABSTRACTIn situ observations of 1.5 MeV Xe+ ion irradiated Au films at room temperature and at 150°C reveal the evolution of grain growth: the average grain size increases by the mechanisms of grain boundary migration and grain coalescence.

In-Situ Tem Investigation During Thermal Cycling of thin Copper Films

1996 ◽  
Vol 436 ◽  
Author(s):  
R.-M. Keller ◽  
W. Sigle ◽  
S. P. Baker ◽  
O. Kraft ◽  
E. Arzt
Keyword(s):  
Grain Growth ◽  
Room Temperature ◽  
Dislocation Motion ◽  
In Situ Tem ◽  
Copper Films ◽  
Stress Evolution ◽  
Cu Films ◽  
Transmission Electron ◽  
Insight Into

AbstractIn-situ transmission electron microscopy (TEM) was performed to study grain growth and dislocation motion during temperature cycles of Cu films with and without a cap layer. In addition, the substrate curvature method was employed to determine the corresponding stresstemperature curves from room temperature up to 600°C. The results of the in-situ TEM investigations provide insight into the microstructural evolution which occurs during the stress measurements. Grain growth occurred continuously throughout the first heating cycle in both cases. The evolution of dislocation structure observed in TEM supports an explanation of the stress evolution in both capped and uncapped films in terms of dislocation effects.

Room Temperature Self-Annealing of Electroplated and Sputtered Copper Films

1999 ◽  
Vol 562 ◽  
Author(s):  
Michelle Chen ◽  
Suraj Rengarajan ◽  
Peter Hey ◽  
Yezdi Dordi ◽  
Hong Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Copper Film ◽  
Copper Films ◽  
Organic Additives ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Electroplated Copper ◽  
Effect Of Copper

ABSTRACTSelf-annealing properties of electroplated and sputtered copper films at room temperature were investigated in this study, in particular, the effect of copper film thickness, electrolyte systems used, as well as their level of organic additives for electroplating. Real-time grain growth was observed by transmission electron microscopy. Sheet resistance and X-ray diffraction measurements further confirmed the recrystallization of the electroplated copper film with time. The recrystallization of electroplated films was then compared with that of sputtered copper films.

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