Octahedral void defects and related circular stains on thermal oxides

1999 ◽  
Vol 86 (3) ◽  
pp. 1322-1325 ◽  
Author(s):  
Manabu Itsumi ◽  
Takemi Ueki ◽  
Norikuni Yabumoto ◽  
Mineharu Suzuki
Keyword(s):  
Octahedral Void ◽  
Void Defects

Octahedral void defects observed in the bulk of Czochralski silicon

1997 ◽  
Vol 70 (10) ◽  
pp. 1248-1250 ◽  
Author(s):  
Takemi Ueki ◽  
Manabu Itsumi ◽  
Tadao Takeda
Keyword(s):  
Czochralski Silicon ◽  
Octahedral Void ◽  
Void Defects

Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1228-1235 ◽  
Author(s):  
Manabu Itsumi ◽  
Takemi Ueki ◽  
Masaki Watanabe ◽  
Norikuni Yabumoto
Keyword(s):  
Gate Oxide ◽  
Czochralski Silicon ◽  
Octahedral Void ◽  
Void Defects ◽  
Oxide Defects

Octahedral Void Defects Causing Gate-Oxide Defects In Moslsis

1996 ◽  
Vol 442 ◽  
Author(s):  
Manabu Itsumi
Keyword(s):  
Integrated Circuits ◽  
Dielectric Breakdown ◽  
Side Wall ◽  
Void Defect ◽  
Czochralski Silicon ◽  
Octahedral Void ◽  
Void Defects ◽  
Oxide Defects ◽  
Experimental Findings ◽  
First Time

AbstractWe found oxide defects originating in standard Czochralski silicon and proposed the sacrificial oxidation method to eliminate these defects in about 1979. Later, N2 annealing and H2 annealing methods were proposed successively, and these three elimination methods have been successfully introduced into actual fabrication lines for highly reliable integrated circuits. However, the origin of the defect was not clarified until recently. We combined copper decoration and TEM in order to observe the origin of the oxide defects and for the first time, observed octahedral void defects systematically at the oxide defects with standard Czochralski silicon. The sizes of the defects are typically 0.1–0.2 microns. These Si-crystalline defects are the origin of oxide defects and, at the same time, may be the origin of crystal originated particles. Recently, we have observed octahedral void defects in the bulk of the standard Czochralski silicon too. Some experimental findings suggest that some impurities on the side wall of the octahedral void defect induce dielectric breakdown of the gate-oxides.

Oxide ridge formed around octahedral void defects on (001)-oriented Czochralski silicon

1999 ◽  
Vol 86 (4) ◽  
pp. 2330-2333 ◽  
Author(s):  
Manabu Itsumi ◽  
Masahiko Maeda ◽  
Takemi Ueki ◽  
Satoshi Tazawa
Keyword(s):  
Czochralski Silicon ◽  
Octahedral Void ◽  
Void Defects

Two Kinds of Impurity-related Mark on Thermal Oxides Originating in Octahedral Void Defects

1999 ◽  
Vol 38 (Part 1, No. 10) ◽  
pp. 5720-5724 ◽  
Author(s):  
Manabu Itsumi ◽  
Masahiko Maeda ◽  
Shin-ichi Ohfuji ◽  
Takemi Ueki
Keyword(s):  
Octahedral Void ◽  
Void Defects

scholarly journals Elucidation of void defects by soft reduction in medium carbon steel via EBSD and X-ray computed tomography

2021 ◽  
pp. 109978
Author(s):  
Naqash Ali ◽  
Liqiang Zhang ◽  
Hongwei Zhou ◽  
Aonan Zhao ◽  
Chaojie Zhang ◽  
...  
Keyword(s):  
Computed Tomography ◽  
Carbon Steel ◽  
Medium Carbon Steel ◽  
Medium Carbon ◽  
X Ray ◽  
Soft Reduction ◽  
Void Defects ◽  
X Ray Computed
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