Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy

1999 ◽  
Vol 85 (12) ◽  
pp. 8349-8352 ◽  
Author(s):  
K. Suzuki ◽  
R. A. Hogg ◽  
Y. Arakawa
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Type Ii ◽  
Structural And Optical Properties ◽  
Self Assembled

Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy

2004 ◽  
Vol 38 (3) ◽  
pp. 340-343 ◽  
Author(s):  
I. P. Soshnikov ◽  
N. V. Kryzhanovskaya ◽  
N. N. Ledentsov ◽  
A. Yu. Egorov ◽  
V. V. Mamutin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots

The Structural and Optical Properties of Self-assembled InGaN/GaN Quantum Dots Grown by Molecular Beam Epitaxy

2006 ◽  
Vol 955 ◽  
Author(s):  
Tim Michael Smeeton ◽  
Mathieu Sénès ◽  
Katherine L Smith ◽  
Stewart E Hooper ◽  
Jon Heffernan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emission ◽  
Structural And Optical Properties ◽  
Discrete Energy ◽  
Time Resolved ◽  
Transmission Electron ◽  
Z Contrast

ABSTRACTThe structural and optical properties of InGaN quantum dots grown by plasma-assisted molecular beam epitaxy (MBE) have been characterised using atomic force microscopy, high-resolution transmission electron microscopy (TEM), Z-contrast scanning TEM, micro-photoluminescence (PL), temperature dependent PL and time-resolved PL. The uncapped InGaN nano-islands have densities of ∼1.5 × 1011 cm−2, heights of (1.7 ± 1.0) nm and diameters of (10 ± 4) nm. These parameters are not substantially changed during overgrowth of a GaN cap and the resulting quantum dots have a composition of In0.15Ga0.85N. The observation of narrow luminescence peaks in micro-PL measurements proves light emission from discrete energy states and the optical properties indicate strong confinement of carriers in the quantum dots and an unusually weak impact of piezoelectric field effects.

In–Mole-Fraction and Thickness of Ultra-Thin InGaAs Insertion Layers Effects on the Structural and Optical Properties of InAs Quantum Dots

2007 ◽  
Vol 31 ◽  
pp. 132-134
Author(s):  
P. Boonpeng ◽  
S. Panyakeow ◽  
S. Ratanathammaphan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Size Distribution ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots ◽  
Pl Spectrum

InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on different InxGa1-xAs (0 ≤ x ≤ 0.3) to investigate the effect of In-mole-fraction and thickness of InGaAs insertion layer (IL) on the structural and optical properties of the QDs. The density of QDs directly grown on GaAs is 1×1010 cm-2, and increase to 1.4-1.8×1010 cm-2 on InGaAs layers which depend on the In-mole-fraction and thickness of InGaAs layers. The effects of In-mole-fraction and thickness of InGaAs insertion layer on optical properties of the QDs are studied by photoluminescence (PL). The FWHM of PL spectrum corresponds to the size distribution of the QDs.

Piezoelectric InAs (211)B quantum dots grown by molecular beam epitaxy: Structural and optical properties

2010 ◽  
Vol 108 (10) ◽  
pp. 103525 ◽  
Author(s):  
G. E. Dialynas ◽  
S. Kalliakos ◽  
C. Xenogianni ◽  
M. Androulidaki ◽  
T. Kehagias ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural And Optical Properties

Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy

2008 ◽  
Vol 39 (11) ◽  
pp. 1248-1250 ◽  
Author(s):  
A. Pulzara-Mora ◽  
E. Cruz-Hernández ◽  
J.S. Rojas-Ramírez ◽  
V.H. Méndez-García ◽  
M. López-López
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots

scholarly journals In-mole-fraction of InGaAs Insertion Layers Effects on the Structural and Optical Properties of GaSb Quantum Dots Grown on (001) GaAs Substrate

1970 ◽  
Vol 10 (2) ◽  
pp. 129-135
Author(s):  
Suwit Kiravittaya ◽  
Kamonchanok Khoklang ◽  
Supachok Thainoi ◽  
Somsak Panyakeow ◽  
Somchai Ratanathammaphan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Mole Fraction ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Indium Content ◽  
Structural And Optical Properties ◽  
Size Change ◽  
Shape And Size

GaSb quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a 4-monolayer (ML) InxGa1-xAs (x = 0.07, 0.15, 0.20, and 0.25) to investigate the effects of In-mole-fraction of InGaAs insertion layers on the structural and optical properties of the GaSb QDs. The density of grown GaSb QDs is approximately 1.2-2.8109 cm−2 on In-GaAs insertion layers which depends on the In-molefraction. Dot shape and size change substantially when In-mole-fraction of InGaAs insertion layers is varied. The uniformity of GaSb QDs improves when the indium content increases. The change in freestanding QD morphology is likely due to the modified strain at different values of indium compositions in InGaAs insertion layers. The effects of In-molefraction of InGaAs insertion layer on optical properties of the QDs are studied by photoluminescence (PL). PL results show the blueshift of the emission when the indium content in InGaAs insertion layer increases.

Sign in / Sign up

Export Citation Format

Share Document