Porous silicon strain during in situ ultrahigh vacuum thermal annealing

1999 ◽  
Vol 85 (10) ◽  
pp. 7105-7111 ◽  
Author(s):  
D. Buttard ◽  
G. Dolino ◽  
C. Faivre ◽  
A. Halimaoui ◽  
F. Comin ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Thermal Annealing ◽  
Ultrahigh Vacuum

No Correlation Between Porous Silicon Photoluminescence and Surface Hydrogen Species

1993 ◽  
Vol 298 ◽  
Author(s):  
S.M. Geoqrg ◽  
M.B. Robinson ◽  
A.C. Dillon
Keyword(s):  
Porous Silicon ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Quantum Confinement ◽  
Vacuum Chamber ◽  
Etching Time ◽  
Surface Species ◽  
Initial Sample ◽  
Surface Hydrogen

AbstractThe photoluminescence (PL) of porous silicon has been attributed to quantum confinement, amorphous silicon, or surface species such as hydrogen, polysilanes or siloxene. Our research has tested the early claims that surface hydrogen is responsible for PL. Our initial studies examined the effect of thermal annealing on surface hydrogen and PL in situ in an ultrahigh vacuum chamber. The results showed that the PL decreased between 450–550 whereas H2 was desorbed from surface SiH2 species between 500–575 K. There was no direct correlation between the PL and the loss of SiH2 surface species. Our most recent investigations have monitored PL and surface hydrogen species as a function of HF etching time for electrochemically anodized porous silicon samples that were not initially photoluminescent. While the surface hydrogen species continually decreased versus HF etching time, the photoluminescence did not appear until after HF etching times of 20–80 minutes depending on initial sample porosity. These results again illustrated that there is no direct correlation between the PL and surface hydrogen species.

Effect of Surface Coverage on Porous Silicon Photoluminescence: Transmission FTIR Studies

1991 ◽  
Vol 256 ◽  
Author(s):  
M. B. Robinson ◽  
A. C. Dillon ◽  
D. R. Haynes ◽  
S. M. George
Keyword(s):  
Fourier Transform ◽  
Porous Silicon ◽  
Ftir Spectroscopy ◽  
Surface Coverage ◽  
Ultrahigh Vacuum ◽  
Photoluminescence Intensity ◽  
Ftir Studies ◽  
Photoluminescence Studies ◽  
Effect Of Surface

ABSTRACTTransmission Fourier Transform Infrared (FTIR) Spectroscopy was utilized to monitor the effect of surface coverage on photoluminescent porous silicon. These experiments were performed in situ in an ultrahigh vacuum (UHV) chamber to correlate simultaneously surface coverage and photoluminescence intensity. The goal of these FTIR and photoluminescence studies was to clarify the mechanism of the photoluminescence from porous silicon.

scholarly journals In situ TEM thermal annealing of high purity Fe10wt%Cr alloy thin foils implanted with Ti and O ions

2019 ◽  
Vol 461 ◽  
pp. 219-225
Author(s):  
Martin Owusu-Mensah ◽  
Stéphanie Jublot-Leclerc ◽  
Aurélie Gentils ◽  
Cédric Baumier ◽  
Joël Ribis ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
High Purity ◽  
In Situ Tem ◽  
Thin Foils

Variation of the optical properties of porous silicon as a result of thermal annealing in vacuum

1997 ◽  
Vol 31 (7) ◽  
pp. 704-706 ◽  
Author(s):  
V. A. Kiselev ◽  
S. V. Polisadin ◽  
A. V. Postnikov
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Thermal Annealing

In situ X-ray Scattering Study of the Formation of Au Nano Crystals During Thermal Annealing

2007 ◽  
Vol 1027 ◽  
Author(s):  
Do Young Noh ◽  
Ki-Hyun Ryu ◽  
Hyon Chol Kang
Keyword(s):  
Thermal Annealing ◽  
Bragg Reflection ◽  
Ex Situ ◽  
X Ray ◽  
Force Microscopy ◽  
X Ray Scattering ◽  
Atomic Force ◽  
Au Thin Films ◽  
Ray Scattering

AbstractThe transformation of Au thin films grown on sapphire (0001) substrates into nano crystals during thermal annealing was investigated by in situ synchrotron x-ray scattering and ex situ atomic force microscopy (AFM). By monitoring the Au(111) Bragg reflection and the low Q reflectivity and comparing them with ex situ AFM images, we found that polygonal-shape holes were nucleated and grow initially. As the holes grow larger and contact each other, their boundary turns into Au nano crystals. The Au nano crystals have a well-defined (111) flat top surface and facets in the in-plane direction.

scholarly journals The design and the performance of an ultrahigh vacuum 3He fridge-based scanning tunneling microscope with a double deck sample stage for in-situ tip treatment

2019 ◽  
Vol 196 ◽  
pp. 180-185
Author(s):  
Syu-You Guan ◽  
Hsien-Shun Liao ◽  
Bo-Jing Juang ◽  
Shu-Cheng Chin ◽  
Tien-Ming Chuang ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Ultrahigh Vacuum ◽  
Scanning Tunneling ◽  
Tunneling Microscope

(Invited) Porous Silicon Dissolution Monitoring and Optical Constants Measurement Using in Situ Photoconduction in HF

2016 ◽  
Vol 75 (1) ◽  
pp. 63-75
Author(s):  
B. Gelloz ◽  
K. Ichimura ◽  
H. Fuwa ◽  
E. Kondoh ◽  
L. Jin
Keyword(s):  
Porous Silicon ◽  
Optical Constants ◽  
Silicon Dissolution

scholarly journals Porous Silicon Structural Evolution from In-Situ Luminescence and Raman Measurements

1996 ◽  
Vol 431 ◽  
Author(s):  
D. R. Tallant ◽  
M. J. Kelly ◽  
T. R. Guilinger ◽  
R. L. Simpson
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Structural Evolution ◽  
Surface Oxidation ◽  
Ethanol Solution ◽  
Nonradiative Recombination ◽  
Photoluminescence Intensity ◽  
Exciton Migration ◽  
Photoluminescence Mechanism

AbstractWe performed in-situ photoluminescence and Raman measurements on an anodized silicon surface in the HF/ethanol solution used for anodization. The porous silicon thereby produced, while resident in HF/ethanol, does not immediately exhibit intense photoluminescence. Intense photoluminescence develops spontaneously in HF/ethanol after 18–24 hours or with replacement of the HF/ethanol with water. These results support a quantum confinement mechanism in which exciton migration to traps and nonradiative recombination dominates the de-excitation pathways until silicon nanocrystals are physically separated and energetically decoupled by hydrofluoric acid etching or surface oxidation. The porous silicon surface, as produced by anodization, shows large differences in photoluminescence intensity and peak wavelength over millimeter distances. Parallel Raman measurements implicate nanometer-size silicon particles in the photoluminescence mechanism.

Effects of in-situ thermal annealing on defects associated with GaAs/Ge interface in GaAs/Ge/Si heterostructure

1993 ◽  
Vol 16 (1) ◽  
pp. 26-28 ◽  
Author(s):  
D.K. Kim ◽  
B.-T. Lee ◽  
Y.D. Woo ◽  
T.W. Kang ◽  
M.C. Paek
Keyword(s):  
Thermal Annealing
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