scholarly journals Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure

2012 ◽  
Vol 100 (15) ◽  
pp. 152112 ◽  
Author(s):  
A. Gocalinska ◽  
M. Manganaro ◽  
E. Pelucchi
2014 ◽  
Vol 8 (2) ◽  
pp. 25-32 ◽  
Author(s):  
Luke J. Mawst ◽  
Thomas Earles ◽  
TaeWan Kim ◽  
Kevin Schulte ◽  
Jeremy D. Kirch ◽  
...  

2012 ◽  
Vol 57 (6) ◽  
pp. 841-847 ◽  
Author(s):  
G. B. Galiev ◽  
S. S. Pushkarev ◽  
I. S. Vasil’evskii ◽  
E. A. Klimov ◽  
R. M. Imamov ◽  
...  
Keyword(s):  

2017 ◽  
Vol 62 (6) ◽  
pp. 947-954
Author(s):  
G. B. Galiev ◽  
I. N. Trunkin ◽  
E. A. Klimov ◽  
A. N. Klochkov ◽  
A. L. Vasiliev ◽  
...  

2013 ◽  
Vol 1493 ◽  
pp. 245-251 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Brendan Foran ◽  
William Lotshaw ◽  
Steven C. Moss ◽  
...  

ABSTRACTMulti-junction III-V solar cells are based on a triple-junction design that employs a 1eV bottom junction grown on the GaAs substrate with a GaAs middle junction and a lattice-matched InGaP top junction. There are two possible approaches implementing the triple-junction design. The first approach is to utilize lattice-matched dilute nitride materials such as InGaAsN(Sb) and the second approach is to utilize lattice-mismatched InGaAs employing a metamorphic buffer layer (MBL). Both approaches have a potential to achieve high performance triple-junction solar cells. A record efficiency of 43.5% was achieved from multi-junction solar cells using the first approach [1] and the solar cells using the second approach yielded an efficiency of 41.1% [2]. We studied carrier dynamics and defects in bulk 1eV InGaAsNSb materials and InGaAs layers with MBL grown by MOVPE for multi-junction solar cells.


2019 ◽  
Vol 191 ◽  
pp. 406-412 ◽  
Author(s):  
Qi Lu ◽  
Richard Beanland ◽  
Denise Montesdeoca ◽  
Peter J. Carrington ◽  
Andrew Marshall ◽  
...  

1999 ◽  
Vol 343-344 ◽  
pp. 520-523 ◽  
Author(s):  
Ákos Nemcsics ◽  
Ferenc Riesz ◽  
László Dobos
Keyword(s):  

2013 ◽  
Vol 102 (20) ◽  
pp. 201111 ◽  
Author(s):  
Y. Y. Cao ◽  
Y. G. Zhang ◽  
Y. Gu ◽  
X. Y. Chen ◽  
L. Zhou ◽  
...  

2011 ◽  
Vol 315 (1) ◽  
pp. 96-101 ◽  
Author(s):  
J. Kirch ◽  
T.W. Kim ◽  
J. Konen ◽  
L.J. Mawst ◽  
T.F. Kuech ◽  
...  

Laser Physics ◽  
2018 ◽  
Vol 28 (7) ◽  
pp. 076206
Author(s):  
K A Kuznetsov ◽  
G B Galiev ◽  
G Kh Kitaeva ◽  
V V Kornienko ◽  
E A Klimov ◽  
...  

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