2.7 μm InAs quantum well lasers on InP-based InAlAs metamorphic buffer layers

2013 ◽  
Vol 102 (20) ◽  
pp. 201111 ◽  
Author(s):  
Y. Y. Cao ◽  
Y. G. Zhang ◽  
Y. Gu ◽  
X. Y. Chen ◽  
L. Zhou ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Buffer Layers ◽  
Metamorphic Buffer

2.5–3.5 μm optically pumped GaInSb/AlGaInSb multiple quantum well lasers grown on AlInSb metamorphic buffer layers

2003 ◽  
Vol 93 (6) ◽  
pp. 3177-3181 ◽  
Author(s):  
E. A. Pease ◽  
L. R. Dawson ◽  
L. G. Vaughn ◽  
P. Rotella ◽  
L. F. Lester
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Buffer Layers ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Metamorphic Buffer

InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer

2015 ◽  
Vol 106 (12) ◽  
pp. 121102 ◽  
Author(s):  
Y. Gu ◽  
Y. G. Zhang ◽  
Y. J. Ma ◽  
L. Zhou ◽  
X. Y. Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Type I ◽  
Metamorphic Buffer ◽  
Pulsed Mode

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

Optical Properties of Zn1-xCdxSe/ZnSe Quantum Well Lasers Fabricated by Molecular Beam Epitaxy

1996 ◽  
Vol 203 ◽  
pp. 261-266
Author(s):  
L. Calcagnile ◽  
G. Colì ◽  
R. Cingolani ◽  
L. Vanzetti ◽  
L. Sorba ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers
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