Investigation of optical properties of interfaces between heavily doped Al0.48In0.52As:Si and InP (Fe) substrates by photoreflectance analysis

1999 ◽  
Vol 85 (8) ◽  
pp. 4184-4188 ◽  
Author(s):  
E. Laureto ◽  
I. F. L. Dias ◽  
J. L. Duarte ◽  
E. Di Mauro ◽  
H. Iwamoto ◽  
...  
Keyword(s):  
Optical Properties ◽  
Heavily Doped

OPTICAL PROPERTIES OF HEAVILY DOPED POLYACETYLENE FILMS

1983 ◽  
Vol 44 (C3) ◽  
pp. C3-345-C3-348
Author(s):  
O. Bernard ◽  
M. Palpacuer ◽  
C. Benoit ◽  
M. Rolland ◽  
M. J.M. Abadie
Keyword(s):  
Optical Properties ◽  
Heavily Doped

Some Optical Properties of Heavily Doped Cadmium Selenide Single Crystals

1962 ◽  
pp. 1254-1260
Author(s):  
Czan Czun Da ◽  
J. Rauluszkiewicz ◽  
W. Wardzynski
Keyword(s):  
Optical Properties ◽  
Single Crystals ◽  
Cadmium Selenide ◽  
Heavily Doped

Optical properties of Er3+ heavily doped silica glass fabricated by zeolite method

2020 ◽  
Vol 543 ◽  
pp. 120149 ◽  
Author(s):  
Yu Yamasaki ◽  
Rieko Azuma ◽  
Yoshio Kagebayashi ◽  
Kana Fujioka ◽  
Yasushi Fujimoto
Keyword(s):  
Optical Properties ◽  
Silica Glass ◽  
Heavily Doped

Microstructural and optical properties of SnO2 thin films grown on heavily doped n-InP(100) substrates

2001 ◽  
Vol 79 (14) ◽  
pp. 2187-2189 ◽  
Author(s):  
T. W. Kim ◽  
D. U. Lee ◽  
D. C. Choo ◽  
Y. S. Yoon
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Heavily Doped ◽  
Sno2 Thin Films

Optical Properties of Laser Induced Heavily Doped Silicon Layers

1983 ◽  
Vol 23 ◽  
Author(s):  
A. Slaoui ◽  
E. Fogarassy ◽  
P. Siffert ◽  
J.F. Morhange ◽  
M. Balkanski
Keyword(s):  
Solid Solution ◽  
Optical Properties ◽  
Visible Light ◽  
Laser Annealing ◽  
Supersaturated Solid Solution ◽  
Raman Spectrometry ◽  
Silicon Lattice ◽  
Doped Silicon ◽  
Heavily Doped

ABSTRACTThe goal of this paper is to investigate optical properties of heavily doped silicon, performed by laser annealing of implanted layers.The optical properties were investigated by using U.V. and visible light (between 200 and 500 nm)reflectance and Raman spectrometry measurements. The experimental observations have been correlated with the contribution of the supersaturated solid solution of arsenic in the silicon lattice. Furthermore,the absorption coefficent of these layers has been deduced from ellipsometry measurements.

Optical Properties of Heavily Doped Compensated Germanium

1962 ◽  
Vol 128 (4) ◽  
pp. 1664-1667 ◽  
Author(s):  
A. B. Fowler ◽  
W. E. Howard ◽  
G. E. Brock
Keyword(s):  
Optical Properties ◽  
Heavily Doped

Optical Properties of Heavily Doped Semiconductor Layers

1987 ◽  
Vol T19B ◽  
pp. 544-547 ◽  
Author(s):  
S U Campisano ◽  
E Rimini ◽  
A Borghesi ◽  
G Guizzetti ◽  
L Nosenzo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Heavily Doped

scholarly journals INFLUENCE OF THE METHOD OF DOPING ON UNIFORMITY AND OPTICAL PROPERTIES OF LiNbO:Mg CRYSTALS

2021 ◽  
pp. 383-391
Author(s):  
Николай Васильевич Сидоров ◽  
Наталья Александровна Теплякова ◽  
Михаил Николаевич Палатников
Keyword(s):  
Raman Spectroscopy ◽  
Optical Properties ◽  
Magnesium Concentration ◽  
Octahedral Structure ◽  
Precursor Synthesis ◽  
Domain State ◽  
Compositional Homogeneity ◽  
Heavily Doped ◽  
A Charge ◽  
Laser Conoscopy

Представлены результаты сравнительных комплексных исследований методами спектроскопии комбинационного рассеяния света и лазерной коноскопии композиционной однородности и некоторых оптических свойства близких по составу сильно легированных монодоменизированных кристаллов LiNbO: Mg (5,03 мол. % MgO и LiNbO: Mg (4,75 мол. % MgO), с концентрацией магния, близкой к пороговому значению ≈ 5 мол. % MgO, выращенных из шихты, синтезированной с использованием прекурсора NbO : Mg (метод гомогенного легирования), а также выращенных при непосредственном добавлении магния в расплав (метод прямого легирования). Показано, что методом гомогенного легирования с использованием прекурсора NbO : Mg можно получать отличающиеся низким коэрцитивным полем более композиционно однородные сильно легированные монокристаллы LiNbO : Mg, чем методом прямого легирования расплава магнием. При этом более однородное распределение легирующей добавки в кристаллах гомогенного легирования начинает формироваться уже на стадии синтеза прекурсора NbO : Mg и шихты ниобата лития при формировании химически активных комплексов, определяющих преимущественно кислородно-октаэдрическую структуру прекурсора NbO : Mg. The paper considers results for strongly doped turned to a single domain state crystals LiNbO: Mg (5,03 mol % MgO and LiNbO: Mg (4,75 mol % MgO). Magnesium concentration in these crystals is close to each other and to threshold ≈ 5 mol % MgO . Crystals were grown from a charge synthesized using precursor LiNbO: Mg (homogeneous doping method) and from a charge obtained at a direct addition of magnesium to the charge (direct doping method). Complex studies were carried out by Raman spectroscopy and laser conoscopy. Compositional homogeneity and some optical properties of studied crystals are considered. Homogeneous doping with precursor NbO: Mg method allows us to obtain heavily doped LiNbO: Mg single crystals with low coercive field and more compositionally homogeneous than method of direct melt doping with magnesium. In this case, a more uniform distribution of the dopant in homogeneously doped crystals begins to form at the stage of NbO: Mg precursor synthesis during the formation of chemically active complexes that predominantly determine the oxygen-octahedral structure of the NbO: Mg precursor.

Infrared Optical Properties of Ion Implanted and Laser Annealed Silicon

1980 ◽  
Vol 1 ◽  
Author(s):  
Masanobu Miyao ◽  
Teruaki Motooka ◽  
Nobuyoshi Natsuaki ◽  
Takashi Tokuyama
Keyword(s):  
Optical Properties ◽  
Carrier Concentration ◽  
Laser Annealing ◽  
Electronic States ◽  
Free Carrier ◽  
High Dose ◽  
Carrier Relaxation ◽  
Carrier Effective Mass ◽  
Heavily Doped ◽  
Infrared Optical Properties

ABSTRACTElectronic states of extremely heavily doped n-type Si obtained by high dose ion implantation and laser annealing are investigated by measuring the infrared optical properties. Free carrier effective mass (m*) and carrier relaxation time (τ) are obtained as a function of carrier concentration (1019−5×1021 cm−3). Values of m* and τ increase and decrease, respectively, with the increase of carrier concentration. These results are discussed in relation to the occupation of electrons in a new valley of the conduction band.

Optical Properties of Heavily-Doped Polyacetylene

1985 ◽  
Vol 117 (1) ◽  
pp. 267-274 ◽  
Author(s):  
X. Q. Yang ◽  
D. B. Tanner ◽  
A. Feldblum ◽  
H. W. Gibson ◽  
M. J. Rice ◽  
...  
Keyword(s):  
Optical Properties ◽  
Heavily Doped
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