Room temperature deposition of alumina-doped zinc oxide on flexible substrates by direct pulsed laser recrystallization

2012 ◽  
Vol 100 (15) ◽  
pp. 151902 ◽  
Author(s):  
Martin Y. Zhang ◽  
Qiong Nian ◽  
Gary J. Cheng
Keyword(s):  
Zinc Oxide ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Flexible Substrates ◽  
Laser Recrystallization ◽  
Temperature Deposition

Deposition of Al-Doped Zinc Oxide by Direct Pulsed Laser Recrystallization at Room Temperature on Various Substrates for Solar Cell Applications

2012 ◽  
Author(s):  
Martin Y. Zhang ◽  
Qiong Nian ◽  
Gary J. Cheng
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Solar Cell ◽  
Melting Point ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Flexible Substrates ◽  
Laser Recrystallization ◽  
Azo Thin Film

In this study, a method combining room temperature pulsed laser deposition (PLD) and direct pulsed laser recrystallization (DPLR) are introduced to deposit superior transparent conductive oxide (TCO) layer on low melting point flexible substrates. As an indispensable component of thin film solar cell, TCO layer with a higher quality will improve the overall performance of solar cells. Alumina-doped zinc oxide (AZO), as one of the most promising TCO candidates, has now been widely used in solar cells. However, to achieve optimal electrical and optical properties of AZO on low melting point flexible substrate is challenging. Recently developed direct pulsed laser recrystallization (DPLR) technique is a scalable, economic and fast process for point defects elimination and recrystallization at room temperature. It features selective processing by only heating up the TCO thin film and preserve the underlying substrate at low temperature. In this study, 250 nm AZO thin film is pre-deposited by pulsed laser deposition (PLD) on flexible and rigid substrates. Then DPLR is introduced to achieve a uniform TCO layer on low melting point flexible substrates, i.e. commercialized Kapton polyimide film and micron-thick Al-foil. Both finite element analysis (FEA) simulation and designed experiments are carried out to demonstrate that DPLR is promising in manufacturing high quality AZO layers without any damage to the underlying flexible substrates. Under appropriate experiment conditions, such as 248 nm in laser wavelength, 25 ns in laser pulse duration, 15 laser pulses at laser fluence of 25 mJ/cm2, desired temperature would result in the AZO thin film and activate the grain growth and recrystallization. Besides laser conditions, the thermal conductivity and crystallinity of the substrate serve as additional factors in the DPLR process. It is found that the substrate’s thermal conductivity correlates positively with the AZO crystal size; the substrate’s crystallinity correlates positively with the AZO film’s crystallinity. The thermal expansion of substrate would also contribute to the film tensile stress after processed by DPLR technique. The overall results indicate that DPLR technique is useful and scalable for flexible solar cell manufacturing.

Characterization of zinc oxide thin films prepared by pulsed laser deposition at room temperature

2008 ◽  
Vol 202 (22-23) ◽  
pp. 5467-5470 ◽  
Author(s):  
Norihiro Sakai ◽  
Yoshihiro Umeda ◽  
Fumiaki Mitsugi ◽  
Tomoaki Ikegami
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films

Laser Processing in Silicon Molecular Beam Epitaxy

1981 ◽  
Vol 4 ◽  
Author(s):  
T. De Jong ◽  
L. Smit ◽  
V.V. Korablev ◽  
F.W. Saris
Keyword(s):  
Molecular Beam Epitaxy ◽  
Laser Processing ◽  
Room Temperature ◽  
Molecular Beam ◽  
Pulsed Laser ◽  
Epitaxial Layers ◽  
Epitaxial Silicon ◽  
Temperature Deposition ◽  
Substrate Surfaces

ABSTRACTWe have grown epitaxial silicon films on silicon (100), (110) and (111) oriented substrates, using pulsed ruby laser irradiation as a means to obtain clean, ordered substrate surfaces. On these surfaces epitaxial layers were grown in two ways: I. Rȯom temperature deposition and pulsed laser induced epitaxy of 100–300 nm films was carried out repeatedly, yielding ∼1 μm thick epitaxial layers. II. Low temperature molecular beam epitaxy (M.B.E.), even at 250°C on Si(100),of layers up to 1 μm.Applying the second technique to implanted substrates, we annealed and cleaned arsenic implanted silicon (100) samples in situ, and produced epitaxial overlayers of 100–1000 nm, thus creating a buried n-type channel in silicon.

scholarly journals Effect of SiO2 ratio on electrical Properties of SiO2:ZnO Thin Films Prepared by pulsed laser depositions (PLD) technique

2019 ◽  
Vol 23 (10) ◽  
pp. 76
Author(s):  
Abdul-Majeed E. Al-Samarai1 ◽  
Zuheer. N. Majeed1 ◽  
Ghuson. H.Mohammed2
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Laser Pulse ◽  
Silicon Dioxide ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Zno Thin Films ◽  
Pulse Deposition

In this paper zinc oxide was dopped by various concentrations (5,10,15,20,25) % of silicon dioxide. The mixture was deposited on glass substrate by laser pulse deposition at room temperature to obtain (Zn2SiO4) thin films. The D.C conductivity showed a decrease in activation energy by increasing doping from (Ea1=0.096 eV) to (Ea1=0.075 eV) before annealing and after annealing from (Ea1=0.048 eV) to(Ea1=0.027 eV). Hall effect showed that the concentration of carriers increases from (2.79 ×1018cm-3) to (14.29× 1018cm-3 ) before annealing and from (0.30×1016cm-3) to (26.25×1016cm-3) after annealing. The mobility decreases from(2.3cm2/v. sec) to (0.99cm2/v. sec) before annealing and from (7cm2/v. sec) to (2.5cm2/v . sec).   http://dx.doi.org/10.25130/tjps.23.2018.173  

Room Temperature Deposition of Indium Zinc Oxide Films on PES Substrate by LF Magnetron Sputtering

2007 ◽  
Vol 51 (2) ◽  
pp. 589-593 ◽  
Author(s):  
Eun Lyoung Kim ◽  
Sang Kooun Jung ◽  
Choong Soo Kim ◽  
Duck Kyu Park ◽  
Ho-Young Cho ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Oxide Films ◽  
Zinc Oxide Films ◽  
Indium Zinc Oxide ◽  
Temperature Deposition

Effect of Silver thickness and Annealing on Optical and Electrical Properties of Nb2O5/Ag/Nb2O5 Multilayers as Transparent Composite Electrode on Flexible Substrate

2013 ◽  
Vol 1552 ◽  
pp. 101-106
Author(s):  
Aritra Dhar ◽  
T. L. Alford
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Flexible Substrate ◽  
Optical Transmittance ◽  
Conducting Layer ◽  
Flexible Substrates ◽  
Optical And Electrical Properties ◽  
Average Optical Transmittance ◽  
Temperature Deposition ◽  
Transparent Composite

ABSTRACTMultilayer structures of Nb2O5/Ag/Nb2O5 have been deposited onto flexible substrates by sputtering at room temperature to develop indium free composite transparent conductive electrodes. The optical and electrical properties of the multilayers are measured by UV–Visible spectroscopy, Hall measurement and four point probe and the effect of Ag thickness has been studied. The critical thickness of Ag to form a continuous conducting layer is found to be 9.5 nm and the multilayer stack has been optimized to obtain a sheet resistance of 7.2 Ω/sq and an average optical transmittance of 86 % at 550 nm. The Haacke figure of merit (FOM) has been calculated for the films, and the multilayer with 9.5 nm thick Ag layer has the highest FOM with 31.5 x 10-3 Ω/sq, which is one of the best FOM reported till date for room temperature deposition on flexible substrates. The multilayered samples are annealed in vacuum, forming gas, air and O2 environments and the optical and electrical properties are compared against the as-deposited samples.

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