Effect of Silver thickness and Annealing on Optical and Electrical Properties of Nb2O5/Ag/Nb2O5 Multilayers as Transparent Composite Electrode on Flexible Substrate

2013 ◽  
Vol 1552 ◽  
pp. 101-106
Author(s):  
Aritra Dhar ◽  
T. L. Alford
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Flexible Substrate ◽  
Optical Transmittance ◽  
Conducting Layer ◽  
Flexible Substrates ◽  
Optical And Electrical Properties ◽  
Average Optical Transmittance ◽  
Temperature Deposition ◽  
Transparent Composite

ABSTRACTMultilayer structures of Nb2O5/Ag/Nb2O5 have been deposited onto flexible substrates by sputtering at room temperature to develop indium free composite transparent conductive electrodes. The optical and electrical properties of the multilayers are measured by UV–Visible spectroscopy, Hall measurement and four point probe and the effect of Ag thickness has been studied. The critical thickness of Ag to form a continuous conducting layer is found to be 9.5 nm and the multilayer stack has been optimized to obtain a sheet resistance of 7.2 Ω/sq and an average optical transmittance of 86 % at 550 nm. The Haacke figure of merit (FOM) has been calculated for the films, and the multilayer with 9.5 nm thick Ag layer has the highest FOM with 31.5 x 10-3 Ω/sq, which is one of the best FOM reported till date for room temperature deposition on flexible substrates. The multilayered samples are annealed in vacuum, forming gas, air and O2 environments and the optical and electrical properties are compared against the as-deposited samples.

Optimization of IGZO/Cu/IGZO Multilayers as Transparent Composite Electrode on Flexible Substrate by Room-temperature Sputtering and Post-Deposition Anneals

2013 ◽  
Vol 1577 ◽  
Author(s):  
Aritra Dhar ◽  
T. L. Alford
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sheet Resistance ◽  
Room Temperature ◽  
Flexible Substrate ◽  
Middle Layer ◽  
Optical Transmittance ◽  
Optical And Electrical Properties ◽  
Composite Electrodes ◽  
Transparent Composite

ABSTRACTHighly transparent composite electrodes made of multilayers of In- and Ga-doped ZnO and Cu (IGZO/Cu/IGZO) thin films (30/3-9/30 nm thick) are deposited onto flexible substrates at room temperature and by using radio frequency magnetron sputtering. The effect of Cu thickness on the electrical and optical properties of the multilayer stack has been studied in accordance with the Cu morphology. The optical and electrical properties of the multilayers are studied with the UV–Vis spectrophotometry, Hall measurement and four point probe analyses. Results are compared with those from a single IGZO layered thin film. The average optical transmittance and sheet resistance both decreases with increase of copper thickness and has been optimized at 6 nm Cu middle layer thickness. The Haacke figure of merit (FOM) has been calculated to evaluate the performance of the films. The highest FOM achieved is 6 x 10-3 Ω-1 for a Cu thickness of 6 nm with a sheet resistance of 12.2 Ω/sq and an average transmittance of 86%. The multilayered thin films are annealed upto 150 °C in vacuum, forming gas and O2 environments and the optical and electrical properties are studied and compared against the as-deposited samples. Thus IGZO/Cu/IGZO multilayer is a promising flexible electrode material for the next-generation flexible optoelectronics.

Room Temperature Deposition and Properties of AZO Thin Films by DC Magnetron Sputtering under Different Plasma Power

2011 ◽  
Vol 194-196 ◽  
pp. 2440-2443 ◽  
Author(s):  
Jing Rong Chi ◽  
Ping Fan ◽  
Guang Xing Liang ◽  
Dong Ping Zhang ◽  
Xing Min Cai ◽  
...  
Keyword(s):  
Grain Size ◽  
Room Temperature ◽  
Visible Region ◽  
Hexagonal Wurtzite Structure ◽  
Optical Transmittance ◽  
Plasma Power ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Average Optical Transmittance ◽  
Temperature Deposition

To evaluate the influence of plasma power on the structural, electrical and optical properties of Al-doped ZnO (AZO) films, a set of polycrystalline AZO samples under different plasma power were deposited on glass substrates at room temperature. X-ray diffraction technique (XRD), four-point probe measurements and spectrophotometer were used to characterize these films. XRD shows that all AZO films have a hexagonal wurtzite structure with prominent (002) orientation. With the plasma power increasing, the grain size first increases and then decreases. The largest grain size of 23.6 nm in the films is obtained at the plasma power of 123 W. The average optical transmittance of AZO films is over 80% in the visible region. The lowest resistivity of 1.0×10-3Ω•cm is obtained under the plasma power of 220 W.

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Al-DOPED ZnO TRANSPARENT CONDUCTING OXIDE FOR SOLAR CELL APPLICATIONS

2011 ◽  
Vol 04 (04) ◽  
pp. 401-405 ◽  
Author(s):  
W. CHER ◽  
S. YICK ◽  
S. XU ◽  
Z. J. HAN ◽  
K. OSTRIKOV
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Transparent Conducting Oxide ◽  
Optical Transmittance ◽  
Nitrogen Atmosphere ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Optimal Annealing Temperature ◽  
Post Synthesis

Al -doped zinc oxide (AZO) thin films are deposited onto glass substrates using radio-frequency reactive magnetron sputtering and the improvements in their physical properties by post-synthesis thermal treatment are reported. X-ray diffraction spectra show that the structure of films can be controlled by adjusting the annealing temperatures, with the best crystallinity obtained at 400°C under a nitrogen atmosphere. These films exhibit improved quality and better optical transmittance as indicated by the UV-Vis spectra. Furthermore, the sheet resistivity is found to decrease from 1.87 × 10-3 to 5.63 × 10-4Ω⋅cm and the carrier mobility increases from 6.47 to 13.43 cm2 ⋅ V-1 ⋅ s-1 at the optimal annealing temperature. Our results demonstrate a simple yet effective way in controlling the structural, optical and electrical properties of AZO thin films, which is important for solar cell applications.

Optical and electrical properties and simulation curves of NiO/Al/NiO transparent conductive film

2019 ◽  
Vol 33 (01) ◽  
pp. 1850417 ◽  
Author(s):  
Shuyun Wang ◽  
Kailin Wen ◽  
Yang Sun ◽  
Xianwu Xiu ◽  
Shuyun Teng ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Film ◽  
Room Temperature ◽  
Optical And Electrical Properties ◽  
Light Wavelength ◽  
Conductive Films ◽  
Conductive Film ◽  
Average Transmittance ◽  
Interface Characteristics ◽  
Experimental Data Analysis

In this paper, NiO/Al/NiO transparent conductive films were prepared by magnetron sputtering at the room temperature. Effects of the NiO and Al layers thicknesses on the optical and electrical properties of the NiO/Al/NiO laminated films were analyzed. When the light wavelength falls in range 300–900 nm, with the increase of the NiO and Al layers thicknesses, the transmittance of the laminated film first increases significantly and then decreases slightly, finally tends to be stable. The laminated film obtained the best optical and electrical properties when the NiO layer is 40 nm and the Al layer is 12 nm. The maximum transmittance is 83%, the average transmittance is 77.3%, the film resistivity is [Formula: see text] and the carrier concentration is [Formula: see text]. At the same time, the transmittance of laminated film is simulated by FDTD software. But the simulation curve is different from the experimental data. Analysis results show that, with the NiO dielectric is added on both sides of the metal Al film, the light reflection characteristic of laminated film has been completely different from that of the single Al metal film because of the change of interface characteristics between Al film and NiO film, and the actual luminous transmittance greatly increases.

Gallium zinc oxide coated polymeric substrates for optoelectronic applications

2003 ◽  
Vol 769 ◽  
Author(s):  
E. Fortunato ◽  
A. Gonçalves ◽  
A. Marques ◽  
V. Assunção ◽  
I. Ferreira ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Polyethylene Naphthalate ◽  
Good Adhesion ◽  
Polymeric Surface ◽  
Visible Part ◽  
Average Optical Transmittance ◽  
Optical Stability ◽  
Polymeric Substrates

AbstractHighly transparent and conductive ZnO:Ga thin films were produced by rf magnetron sputtering at room temperature on polyethylene naphthalate substrates. The films present a good electrical and optical stability, surface uniformity and a very good adhesion to the polymeric substrates. The lowest resistivity obtained was 5×10-4 Ωcm with a sheet resistance of 15 Ω/sqr and an average optical transmittance in the visible part of the spectra of 80 %. It was also shown that by passivating the polymeric surface with a thin SiO2 layer, the electrical and structural properties of the films are improved nearly by a factor of 2.

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