Temperature-dependent charge transport in copper indium diselenide nanocrystal films

2012 ◽  
Vol 111 (7) ◽  
pp. 073703 ◽  
Author(s):  
Christopher J. Lombardo ◽  
Vahid A. Akhavan ◽  
Matthew G. Panthani ◽  
Brian W. Goodfellow ◽  
Brian A. Korgel ◽  
...  
Keyword(s):  
Charge Transport ◽  
Copper Indium Diselenide ◽  
Temperature Dependent ◽  
Copper Indium ◽  
Nanocrystal Films

Reactive sputtered copper indium diselenide films for photovoltaic applications

1984 ◽  
Vol 2 (2) ◽  
pp. 307-311 ◽  
Author(s):  
John A. Thornton ◽  
David G. Cornog ◽  
R. B. Hall ◽  
S. P. Shea ◽  
J. D. Meakin
Keyword(s):  
Copper Indium Diselenide ◽  
Copper Indium ◽  
Photovoltaic Applications

Copper Indium Gallium Selenide (CIGS) Photovoltaic Devices Made Using Multistep Selenization of Nanocrystal Films

2013 ◽  
Vol 5 (18) ◽  
pp. 9134-9140 ◽  
Author(s):  
Taylor B. Harvey ◽  
Isao Mori ◽  
C. Jackson Stolle ◽  
Timothy D. Bogart ◽  
David P. Ostrowski ◽  
...  
Keyword(s):  
Gallium Selenide ◽  
Photovoltaic Devices ◽  
Copper Indium Gallium Selenide ◽  
Copper Indium ◽  
Nanocrystal Films ◽  
Indium Gallium ◽  
Copper Indium Gallium

Temperature-Dependent Charge Transport in Al/Al Nanocrystal Embedded Al2O3 Nanocomposite/p-Si Diodes

2012 ◽  
Vol 1 (1) ◽  
pp. Q4-Q7 ◽  
Author(s):  
Z. Liu ◽  
T. P. Chen ◽  
Y. Liu ◽  
M. Yang ◽  
J. I. Wong ◽  
...  
Keyword(s):  
Charge Transport ◽  
Temperature Dependent

Large Grain Copper Indium Diselenide Films

1984 ◽  
Vol 131 (9) ◽  
pp. 2182-2185 ◽  
Author(s):  
T. L. Chu ◽  
Shirley S. Chu ◽  
S. C. Lin ◽  
J. Yue
Keyword(s):  
Copper Indium Diselenide ◽  
Copper Indium

Identification of Defect Levels in Copper Indium Diselenide (CuInSe2) Thin Films via Photoluminescence Studies

MRS Advances ◽  
2018 ◽  
Vol 3 (52) ◽  
pp. 3135-3141 ◽  
Author(s):  
Niraj Shrestha ◽  
Dhurba R. Sapkota ◽  
Kamala K. Subedi ◽  
Puja Pradhan ◽  
Prakash Koirala ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Intensity ◽  
Copper Indium Diselenide ◽  
Defect States ◽  
Phonon Replica ◽  
Shallow Acceptor ◽  
Copper Indium ◽  
Defect Levels ◽  
Photoluminescence Studies ◽  
In Cis

Photoluminescence (PL) spectroscopy has been used to study the defect levels in thin film copper indium diselenide (CuInSe2, CIS) which we are developing as the absorber layer for the bottom cell of a monolithically grown perovskite/CuInSe2 tandem solar cell. Temperature and laser power dependent PL measurements of thin film CIS for two different Cu/In ratios (0.66 and 0.80) have been performed. The CIS film with Cu/In = 0.80 shows a prominent donor-to-acceptor peak (DAP) involving a shallow acceptor of binding energy ∼22 meV, with phonon replica at ∼32 meV spacing. In contrast, PL measurement of CIS film for Cu/In = 0.66 taken at 20 K exhibited an asymmetric and broad PL spectrum with peaks at 0.845 eV and 0.787 eV. Laser intensity dependent PL revealed that the observed peaks 0.845 eV and 0.787 eV shift towards higher energy (aka j-shift) at ∼11.7 meV/decade and ∼ 8 meV/decade with increase in laser intensity respectively. The asymmetric and broad spectrum together with large j-shift suggests that the observed peaks at 0.845 eV and 0.787 eV were related to band-to-tail (BT) and band-to-impurity (BI) transition, respectively. Such a band-tail-related transition originates from the potential fluctuation of defect states at low temperature. The appearance of band related transition in CIS film with Cu/In = 0.66 is the indicator of the presence of large number of charged defect states.

scholarly journals Composite formation in CdSe:Cu2Se nanocrystal films, charge transport characteristics and heterojunction performance

RSC Advances ◽  
2020 ◽  
Vol 10 (15) ◽  
pp. 8842-8852 ◽  
Author(s):  
N. Sajid Babu ◽  
M. Abdul Khadar
Keyword(s):  
Charge Transport ◽  
Composite Formation ◽  
Nanocrystal Films

The use of nanocrystals as materials for potential technological applications depends on tailoring their properties through intentional doping with external impurities.

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