Reactive sputtered copper indium diselenide films for photovoltaic applications

1984 ◽  
Vol 2 (2) ◽  
pp. 307-311 ◽  
Author(s):  
John A. Thornton ◽  
David G. Cornog ◽  
R. B. Hall ◽  
S. P. Shea ◽  
J. D. Meakin
Keyword(s):  
Copper Indium Diselenide ◽  
Copper Indium ◽  
Photovoltaic Applications

Study of electrochemically grown copper indium diselenide (CIS) thin films for photovoltaic applications

2016 ◽  
Vol 27 (12) ◽  
pp. 12374-12384 ◽  
Author(s):  
Ashwini B. Rohom ◽  
Priyanka U. Londhe ◽  
Ganesh R. Bhand ◽  
Manorama G. Lakhe ◽  
Nandu B. Chaure
Keyword(s):  
Thin Films ◽  
Copper Indium Diselenide ◽  
Copper Indium ◽  
Photovoltaic Applications

Photoelectrochemical study of p-type copper indium diselenide thin films for photovoltaic applications

1990 ◽  
Vol 20 (1-2) ◽  
pp. 67-79 ◽  
Author(s):  
D. Lincot ◽  
H. Gomez Meier ◽  
J. Kessler ◽  
J. Vedel ◽  
B. Dimmler ◽  
...  
Keyword(s):  
Thin Films ◽  
Copper Indium Diselenide ◽  
Copper Indium ◽  
Photovoltaic Applications ◽  
P Type

Large Grain Copper Indium Diselenide Films

1984 ◽  
Vol 131 (9) ◽  
pp. 2182-2185 ◽  
Author(s):  
T. L. Chu ◽  
Shirley S. Chu ◽  
S. C. Lin ◽  
J. Yue
Keyword(s):  
Copper Indium Diselenide ◽  
Copper Indium

Identification of Defect Levels in Copper Indium Diselenide (CuInSe2) Thin Films via Photoluminescence Studies

MRS Advances ◽  
2018 ◽  
Vol 3 (52) ◽  
pp. 3135-3141 ◽  
Author(s):  
Niraj Shrestha ◽  
Dhurba R. Sapkota ◽  
Kamala K. Subedi ◽  
Puja Pradhan ◽  
Prakash Koirala ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Intensity ◽  
Copper Indium Diselenide ◽  
Defect States ◽  
Phonon Replica ◽  
Shallow Acceptor ◽  
Copper Indium ◽  
Defect Levels ◽  
Photoluminescence Studies ◽  
In Cis

Photoluminescence (PL) spectroscopy has been used to study the defect levels in thin film copper indium diselenide (CuInSe2, CIS) which we are developing as the absorber layer for the bottom cell of a monolithically grown perovskite/CuInSe2 tandem solar cell. Temperature and laser power dependent PL measurements of thin film CIS for two different Cu/In ratios (0.66 and 0.80) have been performed. The CIS film with Cu/In = 0.80 shows a prominent donor-to-acceptor peak (DAP) involving a shallow acceptor of binding energy ∼22 meV, with phonon replica at ∼32 meV spacing. In contrast, PL measurement of CIS film for Cu/In = 0.66 taken at 20 K exhibited an asymmetric and broad PL spectrum with peaks at 0.845 eV and 0.787 eV. Laser intensity dependent PL revealed that the observed peaks 0.845 eV and 0.787 eV shift towards higher energy (aka j-shift) at ∼11.7 meV/decade and ∼ 8 meV/decade with increase in laser intensity respectively. The asymmetric and broad spectrum together with large j-shift suggests that the observed peaks at 0.845 eV and 0.787 eV were related to band-to-tail (BT) and band-to-impurity (BI) transition, respectively. Such a band-tail-related transition originates from the potential fluctuation of defect states at low temperature. The appearance of band related transition in CIS film with Cu/In = 0.66 is the indicator of the presence of large number of charged defect states.

A low temperature, single step, pulsed d.c magnetron sputtering technique for copper indium gallium diselenide photovoltaic absorber layers

2013 ◽  
Vol 1538 ◽  
pp. 45-50 ◽  
Author(s):  
Sreejith Karthikeyan ◽  
Kushagra Nagaich ◽  
Arthur E Hill ◽  
Richard D Pilkington ◽  
Stephen A Campbell
Keyword(s):  
Optical Properties ◽  
Solar Cell ◽  
Single Step ◽  
Copper Indium Gallium Diselenide ◽  
Copper Indium ◽  
Photovoltaic Applications ◽  
Indium Gallium ◽  
P Type ◽  
Substrate Temperatures ◽  
Copper Indium Gallium

ABSTRACTPulsed d.c Magnetron Sputtering (PdcMS) has been investigated for the first time to study the deposition of copper indium gallium diselenide (CIGS) thin films for photovoltaic applications. Pulsing the d.c. in the mid frequency region enhances the ion intensity and enables long term arc-free operation for the deposition of high resistivity materials such as CIGS. It has the potential to produce films with good crystallinity, even at low substrate temperatures. However, the technique has not generally been applied to the absorber layers for photovoltaic applications. The growth of stoichiometric p-type CIGS with the desired electro-optical properties has always been a challenge, particularly over large areas, and has involved multiple steps often including a dangerous selenization process to compensate for selenium vacancies. The films deposited by PdcMS had a nearly ideal composition (Cu0.75In0.88Ga0.12Se2) as deposited at substrate temperatures ranging from no intentional heating to 400 °C. The films were found to be very dense and pin-hole free. The stoichiometry was independent of heating during the deposition, but the grain size increased with substrate temperature, reaching about ∼ 150 nm at 400 °C. Hot probe analysis showed that the layers were p-type. The physical, structural and optical properties of these films were analyzed using SEM, EDX, XRD, and UV-VIS-NIR spectroscopy. The material characteristics suggest that these films can be used for solar cell applications. This novel ion enhanced single step low temperature deposition technique may have a critical role in flexible and tandem solar cell applications compared to other conventional techniques which require higher temperatures.

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